DATA SHEET COMPOUND TRANSISTOR CE2A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2A3Q is a transistor of on-chip high hFE resistor PACKAGE DRAWING (UNIT: mm) incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments. FEATURES • On-chip bias resistor: R1 = 1.0 kΩ, R2 = 10 kΩ • Low power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A • On-chip dumper diode for reverse cable QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 15 V Collector current (DC) Collector current (Pulse) Base current (DC) IC(DC) ±2.0 A IC(pulse) * ±3.0 A IB(DC) 0.03 A Total power dissipation PT 1.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C * PW ≤ 10 ms, duty cycle ≤ 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16179EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 CE2A3Q ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions TYP. VCB = 50 V, IE = 0 DC current gain hFE1 ** VCE = 50 V, IC = 0.2 A 700 1300 DC current gain hFE2 ** VCE = 5.0 V, IC = 1.0 A 1000 1700 DC current gain hFE3 ** VCE = 5.0 V, IC = 2.0 A 500 1300 Low level output voltage VOL ** VI = 5.0 V, IC = 0.5 A Low level input voltage VIL ** VCE = 12 V, IC = 100 µA MAX. Unit 100 nA − 3000 − − 0.12 0.3 V 0.46 0.4 V Input resistance 1 R1 0.7 1.0 1.3 kΩ Input resistance 2 R2 7.0 10.0 13.0 kΩ Turn-on time ton Storage time tstg Fall time tf IC = 1.0 A 0.4 µs IBI = −IB2 = 10 mA 1.4 µs VCC = 20 V, RL = 20 Ω 0.5 µs ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 % TYPICAL CHARACTERISTICS (Ta = 25°°C) 2 MIN. Data Sheet D16179EJ2V0DS CE2A3Q RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact an NEC sales representative. Data Sheet D16179EJ2V0DS 3 CE2A3Q • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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(Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4