DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm) dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as motors, relays, and solenoids. FEATURES • High DC current gain due to Darlington connection • High surge resistance due to on-chip protection elements: C to E: Dumper diode C to B: Zener diode • Low collector saturation voltage ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT(Ta = 25°C) Tj Tstg Ratings 60±10 60±10 7.0 ±1.0 ±2.0 1.0 150 −55 to +150 Unit V V V A A W °C °C * PW ≤ 10 ms, duty cycle ≤ 50% ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time Symbol ICBO IEBO hFE2** hFE2** VCE(sat)** VBE(sat)** tON tstg tf Conditions VCB = 40 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 2.0 V, IC = 0.2 A VCE = 2.0 V, IC = 0.5 A IC = 0.5 A, IB = 0.5 mA IC = 0.5 A, IB = 0.5 mA IC = 0.5 A, RL = 100 Ω IB1 = −IB2 = 0.1 mA, VCC = 50 V MIN. TYP. 1000 2000 MAX. 0.5 1.0″ Unit µA mA 30000 1.5 2.0 V V µs µs µs 0.5 1.0 1.0 * *Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking hFE2 M 2000 to 5000 L 4000 to 10000 K 8000 to 30000 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16200EJ1V0DS00 Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SD1843 TYPICAL CHARACTERISTICS (Ta = 25°°C) 2 Data Sheet D16200EJ1V0DS 2SD1843 SWICHING TIME (ton, tstg, tf) TEST CIRCUIT Data Sheet D16200EJ1V0DS 3 2SD1843 • The information in this document is current as of July, 2001. The information is subject to change without notice. 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