DATA SHEET COMPOUND TRANSISTOR CE1N2R on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1N2R is a transistor of on-chip high hFE resistor PACKAGE DRAWING (UNIT: mm) incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments. FEATURES • On-chip zener diode for surge voltage absorption • On-chip bias resistor: R1 = 680 Ω, R2 = 10 kΩ • Low power consumption during driving: VOL = 0.3 V MAX.@V1 = 5.0 V, IC = 0.5 A • On-chip dumper diode for reverse cable ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V Collector to emitter voltage VCEO 60±10 V Emitter to base voltage VEBO 15 V Collector current (DC) IC(DC) ±2.0 A IC(pulse) * ±3.0 A Collector current (Pulse) Base current (DC) IB(DC) 0.03 A Total power dissipation PT 1.0 W Junction temperature Tj 150 °C Tstg −55 to +150 °C Storage temperature * PW ≤ 10 ms, duty cycle ≤ 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D10846EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 CE1N2R ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Colletor to emitter voltage Collector cutoff current Symbol VCEO(SUS) ICBO Conditions IC = 2.0 A, IB = 5.0 mA, L = 6.0 mH MIN. TYP. 50 60 VCB = 40 V, IE = 0 MAX. Unit 100 nA V − DC current gain hFE1 ** VCE = 5.0 V, IC = 0.2 A 700 1200 DC current gain hFE2 ** VCE = 5.0 V, IC = 1.0 A 1000 1700 DC current gain hFE3 ** VCE = 5.0 V, IC = 2.0 A 500 1300 Low level output voltage VOL ** VI = 5.0 V, IC = 0.5 A 0.12 0.3 V Low level input voltage VIL ** VCE = 12 V, IC = 100 µA 0.43 0.4 V 680 884 Ω 13.0 kΩ Input resistance R1 E-to-B resistance R2 Turn-on time ton Storage time tstg Fall time tf 476 7.0 10.0 3000 − − IC = 1.0 A 0.4 µs IBI = −IB2 = 10 mA 1.4 µs VCC = 20 V, RL = 20 Ω 0.5 µs ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 % RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact an NEC sales representative. 2 Data Sheet D10846EJ2V0DS CE1N2R [MEMO] Data Sheet D10846EJ2V0DS 3 CE1N2R • The information in this document is current as of July, 2001. The information is subject to change without notice. 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