DATA SHEET COMPOUND TRANSISTOR BB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The BB1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic appliances and OA equipments such as VCRs and TVs. FEATURES PACKAGE DRAWING (UNIT: mm) • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. BB1 SERIES LISTS Products R1 (KΩ) Electrode Connection 1. Emitte (E) 2. Collector (C) 3. Base (B) R2 (KΩ) BB1A4A − 10 BB1L2Q 0.47 4.7 BB1A3M 1.0 1.0 BB1F3P 2.2 10 BB1J3P 3.3 10 BB1L3N 4.7 10 BB1A4M 10 10 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D11739EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 BB1 SERIES ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Symbol Ratings Unit Collector to base volgate Parameter VCBO 30 V Colletor to emitter voltage VCEO 25 V Emitter to base voltage VEBO 10 V Collector current (DC) IC(DC) 0.7 A IC(pulse)Note 1 1.0 A IB(DC) 0.02 A PT 250 mW Collector current (Pulse) Base current (DC) Total power dissipation Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note 1 PW ≤ 10 ms, duty cycle ≤ 50 % BB1A4A ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = 30 V, IE = 0 MAX. Unit 100 nA DC current gain hFE1Note 2 VCE = 2.0 V, IC = 0.1 A 300 − DC current gain Note 2 hFE2 VCE = 2.0 V, IC = 0.5 A 300 − DC current gain hFE3Note 2 VCE = 2.0 V, IC = 0.7 A 135 − Collector saturation voltage V CE(sat) Note 2 Note 2 IC = 0.5 A, IB = 5 mA 0.27 VCE = 5.0 V, IC = 100 µA 0.4 V 0.3 V Input resistance R1 − − − Ω E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit 100 nA Low level input voltage VIL Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % BB1L2Q ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = 30 V, IE = 0 DC current gain Note 2 hFE1 VCE = 2.0 V, IC = 0.1 A 150 400 − DC current gain hFE2Note 2 VCE = 2.0 V, IC = 0.5 A 300 700 − DC current gain Note 2 VCE = 2.0 V, IC = 0.7 A 135 600 − Note 2 hFE3 Low level output voltage VOL VIN = 5.0 V, IC = 0.5 A Low level input voltage VILNote 2 VCE = 5.0 V, IC = 100 µA Input resistance E-to-B resistance R1 329 R2 3.29 Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % 2 0.2 Data Sheet D11739EJ2V0DS 470 4.7 0.3 V 0.3 V 611 Ω 6.11 kΩ BB1 SERIES BB1A3M ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = 30 V, IE = 0 MAX. Unit 100 nA DC current gain hFE1Note 2 VCE = 2.0 V, IC = 0.1 A 80 − DC current gain Note 2 VCE = 2.0 V, IC = 0.5 A 100 − Note 2 135 hFE2 DC current gain hFE3 VCE = 2.0 V, IC = 0.7 A Low level output voltage VOLNote 2 VIN = 5.0 V, IC = 0.5 A Low level input voltage VILNote 2 VCE = 5.0 V, IC = 100 µA − 0.3 0.4 V 0.3 V Input resistance R1 0.7 1.0 1.3 kΩ E-to-B resistance R2 0.7 1.0 1.3 kΩ MIN. TYP. MAX. Unit 100 nA Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % BB1F3P ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = 30 V, IE = 0 Note 2 VCE = 2.0 V, IC = 0.1 A 300 − DC current gain Note 2 hFE2 VCE = 2.0 V, IC = 0.5 A 300 − DC current gain hFE3Note 2 VCE = 2.0 V, IC = 0.7 A 135 − DC current gain Low level output voltage hFE1 Note 2 VOL Note 2 VIN = 5.0 V, IC = 0.3 A 0.3 VCE = 5.0 V, IC = 100 µA V 0.3 V Input resistance R1 1.54 2.2 2.86 kΩ E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit 100 nA Low level input voltage VIL Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % BP1J3P ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = 30 V, IE = 0 DC current gain Note 2 hFE1 VCE = 2.0 V, IC = 0.1 A 300 600 − DC current gain hFE2Note 2 VCE = 2.0 V, IC = 0.5 A 300 700 − DC current gain Note 2 VCE = 2.0 V, IC = 0.7 A 135 600 − Note 2 hFE3 Low level output voltage VOL VIN = 5.0 V, IC = 0.2 A Low level input voltage VILNote 2 VCE = 5.0 V, IC = 100 µA 0.14 0.3 V 0.3 V Input resistance R1 2.31 3.3 4.29 kΩ E-to-B resistance R2 7 10 13 kΩ Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % Data Sheet D11739EJ2V0DS 3 BB1 SERIES BB1L3N ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = 30 V, IE = 0 MAX. Unit 100 nA DC current gain hFE1Note 2 VCE = 2.0 V, IC = 0.1 A 300 − DC current gain Note 2 VCE = 2.0 V, IC = 0.5 A 300 − Note 2 135 hFE2 − DC current gain hFE3 VCE = 2.0 V, IC = 0.7 A Low level output voltage VOLNote 2 VIN = 5.0 V, IC = 0.2 A 0.3 Low level input voltage VILNote 2 VCE = 5.0 V, IC = 100 µA 0.3 V V Input resistance R1 3.29 4.7 6.11 kΩ E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit 100 nA Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % BB1A4M ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = 30 V, IE = 0 Note 2 VCE = 2.0 V, IC = 0.1 A 300 − DC current gain Note 2 hFE2 VCE = 2.0 V, IC = 0.5 A 300 − DC current gain hFE3Note 2 VCE = 2.0 V, IC = 0.7 A 135 − DC current gain Collector saturation voltage hFE1 Note 2 VOL Note 2 VIN = 5.0 V, IC = 0.2 A V 0.3 V Input resistance R1 7 10 13 kΩ E-to-B resistance R2 7 10 13 kΩ Low level input voltage VIL Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % 4 0.3 VCE = 5.0 V, IC = 100 µA Data Sheet D11739EJ2V0DS BB1 SERIES TYPICAL CHARACTERISTICS (Ta = 25°°C) Data Sheet D11739EJ2V0DS 5 BB1 SERIES • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. 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