DATA SHEET COMPOUND TRANSISTOR HD1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching PACKAGE DRAWING (UNIT: mm) FEATURES • High current drives such as IC outputs and actuators available • On-chip bias resistor • Low power consumption during drive HD1 SERIES LISTS Products Marking R1 (KΩ) R2 (KΩ) HD1A3M LP 1.0 1.0 HD1F3P LQ 2.2 10 HD1L3N LR 4.7 10 HD1A4M LS 10 10 HD1L2Q LT 0.47 4.7 HD1F2Q LU 0.22 2.2 HD1A4A LX − 10 ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 10 V Collector current (DC) IC(DC) 1.0 A Collector current (Pulse) IC(pulse) * 2.0 A Base current (DC) IB(DC) 0.02 A Total power dissipation PT ** 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C * PW ≤ 10 ms, duty cycle ≤ 50 % ** When 0.7 mm × 16 cm ceramic board is used 2 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16182EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 HD1 SERIES HD1A3M ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = 60 V, IE = 0 MAX. Unit 100 nA DC current gain hFE1 ** VCE = 2.0 V, IC = 0.1 A 80 − DC current gain hFE2 ** VCE = 2.0 V, IC = 0.5 A 200 − DC current gain hFE3 ** VCE = 2.0 V, IC = 1.0 A 200 Low level output voltage VOL ** VIN = 5.0 V, IC = 0.4 A 0.35 Low level input voltage VIL ** VCE = 5.0 V, IC = 100 µA 0.3 V − V Input resistance R1 0.7 1.0 1.3 kΩ E-to-B resistance R2 0.7 1.0 1.3 kΩ MIN. TYP. MAX. Unit 100 nA ** PW ≤ 350 µs, duty cycle ≤ 2 % HD1F3P ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = 60 V, IE = 0 DC current gain hFE1 ** VCE = 2.0 V, IC = 0.1 A 200 630 − DC current gain hFE2 ** VCE = 2.0 V, IC = 0.5 A 300 780 − DC current gain hFE3 ** VCE = 2.0 V, IC = 1.0 A 200 430 − Low level output voltage VOL ** VIN = 5.0 V, IC = 0.3 A VIL ** VCE = 5.0 V, IC = 100 µA 0.12 0.3 V 0.5 0.3 V Input resistance R1 1.54 2.2 2.86 kΩ E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit 100 nA Low level input voltage ** PW ≤ 350 µs, duty cycle ≤ 2 % HD1L3N ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = 60 V, IE = 0 DC current gain hFE1 ** VCE = 2.0 V, IC = 0.1 A 200 − DC current gain hFE2 ** VCE = 2.0 V, IC = 0.5 A 300 − DC current gain hFE3 ** VCE = 2.0 V, IC = 1.0 A 200 − Low level output voltage VOL ** VIN = 5.0 V, IC = 0.2 A 0.2 V Low level input voltage VIL ** VCE = 5.0 V, IC = 100 µA 0.3 V Input resistance R1 3.29 4.7 6.11 kΩ E-to-B resistance R2 7 10 13 kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % 2 Data Sheet D16182EJ2V0DS HD1 SERIES HD1A4M ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = 60 V, IE = 0 MAX. Unit 100 nA DC current gain hFE1 ** VCE = 2.0 V, IC = 0.1 A 200 − DC current gain hFE2 ** VCE = 2.0 V, IC = 0.5 A 300 − DC current gain hFE3 ** VCE = 2.0 V, IC = 1.0 A 200 Low level output voltage VOL ** VIN = 5.0 V, IC = 0.1 A 0.2 Low level input voltage VIL ** VCE = 5.0 V, IC = 100 µA 0.3 V − V Input resistance R1 7 10 13 kΩ E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit 100 nA ** PW ≤ 350 µs, duty cycle ≤ 2 % HD1L2Q ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = 60 V, IE = 0 DC current gain hFE1 ** VCE = 2.0 V, IC = 0.1 A 200 − DC current gain hFE2 ** VCE = 2.0 V, IC = 0.5 A 300 − DC current gain hFE3 ** VCE = 2.0 V, IC = 1.0 A 200 − Low level output voltage VOL ** VIN = 5.0 V, IC = 0.8 A VIL ** VCE = 5.0 V, IC = 100 µA 0.5 V 0.3 V Input resistance R1 329 470 611 Ω E-to-B resistance R2 3.29 4.7 6.11 kΩ MIN. TYP. MAX. Unit 100 nA Low level input voltage ** PW ≤ 350 µs, duty cycle ≤ 2 % HD1F2Q ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = 60 V, IE = 0 DC current gain hFE1 ** VCE = 2.0 V, IC = 0.1 A 100 − DC current gain hFE2 ** VCE = 2.0 V, IC = 0.5 A 300 − DC current gain hFE3 ** VCE = 2.0 V, IC = 1.0 A 200 − Low level output voltage VOL ** VIN = 5.0 V, IC = 0.8 A 0.5 V Low level input voltage VIL ** VCE = 5.0 V, IC = 100 µA 0.3 V Input resistance R1 154 220 286 Ω E-to-B resistance R2 1.54 2.2 2.86 kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % Data Sheet D16182EJ2V0DS 3 HD1 SERIES HD1A4A ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions TYP. VCB = 60 V, IE = 0 MAX. Unit 100 nA DC current gain hFE1 ** VCE = 2.0 V, IC = 0.1 A 200 630 − DC current gain hFE2 ** VCE = 2.0 V, IC = 0.5 A 300 780 − hFE3 ** VCE = 2.0 V, IC = 1.0 A 200 DC current gain Collector saturation voltage Low level input voltage VCE(sat) ** VIL ** IC = 0.7 A, IB = 7 mA VCE = 5.0 V, IC = 100 µA Input resistance R1 − E-to-B resistance R2 7 ** PW ≤ 350 µs, duty cycle ≤ 2 % 4 MIN. Data Sheet D16182EJ2V0DS − 430 0.25 0.4 V 0.5 0.3 V − − Ω 10 13 kΩ HD1 SERIES TYPICAL CHARACTERISTICS (Ta = 25°°C) Data Sheet D16182EJ2V0DS 5 HD1 SERIES • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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