DATA SHEET COMPOUND TRANSISTOR AR1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching PACKAGE DRAWING (UNIT: mm) FEATURES • High current drives such as IC output and actuator available • On-chip bias resistor • Low power consumption during drive AR1 SERIES LISTS Products R1 (KΩ) R2 (KΩ) AR1A3M 1.0 1.0 AR1F3P 2.2 10 AR1L3N 4.7 10 AR1A4M 10 10 AR1L2Q 0.47 4.7 AR1F2Q 0.22 2.2 AR1A4A − 10 Electrode Connection 1. Emitter EIAJ : SC-43B 2. Collector JEDEC: TO-92 3. Base IEC : PA33 ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −10 V Collector current (DC) IC(DC) −1.0 A IC(pulse) * −2.0 A IB(DC) −0.02 A Total power dissipation PT 750 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (Pulse) Base current (DC) * PW ≤ 10 ms, duty cycle ≤ 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16172EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 AR1 SERIES AR1A3M ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = −60 V, IE = 0 MAX. Unit −100 nA DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 50 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3 ** VCE = −2.0 V, IC = −1.0 A 50 Low level output voltage VOL ** VIN = −5.0 V, IC = −0.4 A −0.4 Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V − V Input resistance R1 0.7 1.0 1.3 kΩ E-to-B resistance R2 0.7 1.0 1.3 kΩ MIN. TYP. MAX. Unit −100 nA ** PW ≤ 350 µs, duty cycle ≤ 2 % AR1F3P ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = −60 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 150 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3 ** VCE = −2.0 V, IC = −1.0 A 50 − Low level output voltage VOL ** VIN = −5.0 V, IC = −0.35 A −0.3 VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V Low level input voltage V Input resistance R1 1.54 2.2 2.86 kΩ E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit −100 nA ** PW ≤ 350 µs, duty cycle ≤ 2 % AR1L3N ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = −60 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 150 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3 ** VCE = −2.0 V, IC = −1.0 A 50 Low level output voltage VOL ** VIN = −5.0 V, IC = −0.2 A −0.3 V Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V Input resistance R1 3.29 4.7 6.11 kΩ E-to-B resistance R2 7 10 13 kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % 2 − Data Sheet D16172EJ1V0DS AR1 SERIES AR1A4M ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = −60 V, IE = 0 MAX. Unit −100 nA DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 150 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3 ** VCE = −2.0 V, IC = −1.0 A 50 Low level output voltage VOL ** VIN = −5.0 V, IC = −0.1 A −0.2 Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V − V Input resistance R1 7 10 13 kΩ E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit −100 nA ** PW ≤ 350 µs, duty cycle ≤ 2 % AR1L2Q ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = −60 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 150 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3 ** VCE = −2.0 V, IC = −1.0 A 50 − Low level output voltage VOL ** VIN = −5.0 V, IC = −0.5 A −0.55 VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V Low level input voltage V Input resistance R1 329 470 611 Ω E-to-B resistance R2 3.29 4.7 6.11 kΩ MIN. TYP. MAX. Unit −100 nA ** PW ≤ 350 µs, duty cycle ≤ 2 % AR1F2Q ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = −60 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 80 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3 ** VCE = −2.0 V, IC = −1.0 A 50 Low level output voltage VOL ** VIN = −5.0 V, IC = −0.5 A −0.55 V Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V − Input resistance R1 154 220 286 Ω E-to-B resistance R2 1.54 2.2 2.86 kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % Data Sheet D16172EJ1V0DS 3 AR1 SERIES AR1A4A ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions TYP. VCB = −60 V, IE = 0 MAX. Unit −100 nA DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 150 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 − hFE3 ** VCE = −2.0 V, IC = −1.0 A 50 DC current gain Collector saturation voltage Low level input voltage VCE(sat) ** IC = −500 mA, IB = −10 mA VIL ** VCE = −5.0 V, IC = −100 µA Input resistance R1 E-to-B resistance R2 7 Data Sheet D16172EJ1V0DS − −0.20 − ** PW ≤ 350 µs, duty cycle ≤ 2 % 4 MIN. −0.35 V −0.3 V − − Ω 10 13 kΩ AR1 SERIES TYPICAL CHARACTERISTICS (Ta = 25°°C) Data Sheet D16172EJ1V0DS 5 AR1 SERIES • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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