DATA SHEET COMPOUND TRANSISTOR AP1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching PACKAGE DRAWING (UNIT: mm) FEATURES • Current drive available up to 0.7 A • On-chip bias resistor • Low power consumption during drive AP1 SERIES LISTS Products R1 (KΩ) R2 (KΩ) AP1A4A − 10 AP1L2Q 0.47 4.7 AP1A3M 1.0 1.0 AP1F3P 2.2 10 AP1J3P 3.3 10 AP1L3N 4.7 10 AP1A4M 10 10 Electrode Connection 1. Emitter EIAJ : SC-43B 2. Collector JEDEC: TO-92 3. Base IEC : PA33 ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO −25 V Collector to emitter voltage VCEO −25 V Emitter to base voltage VEBO −10 V Collector current (DC) IC(DC) −0.7 A IC(pulse) * −1.0 A A Collector current (Pulse) IB(DC) −0.02 Total power dissipation PT 750 mW Junction temperature Tj 150 °C Tstg −55 to +150 °C Base current (DC) Storage temperature * PW ≤ 10 ms, duty cycle ≤ 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16171EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 AP1 SERIES AP1A4A ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = −22 V, IE = 0 MAX. Unit 100 nA DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 200 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 − hFE3 ** VCE = −2.0 V, IC = −0.7 A 50 DC current gain Collector saturation voltage Low level input voltage VCE(sat) ** VIL ** IC = −0.3 A, IC = −6 A − −0.28 VCE = −5.0 V, IC = −100 µA −0.4 V −0.3 V − − Ω Input resistance R1 − E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit −100 nA ** PW ≤ 350 µs, duty cycle ≤ 2 % AP1L2Q ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = −22 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 150 350 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 300 − DC current gain hFE3 ** VCE = −2.0 V, IC = −0.7 A 50 200 − Low level output voltage VOL ** VIN = −5.0 V, IC = −0.3 A −0.3 −0.4 VIL ** VCE = −5.0 V, IC = −100 µA −0.65 −0.3 V Low level input voltage V Input resistance R1 329 470 611 Ω E-to-B resistance R2 3.39 4.7 6.11 kΩ MIN. TYP. MAX. Unit 100 nA ** PW ≤ 350 µs, duty cycle ≤ 2 % AP1A3M ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = −22 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 80 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3 ** VCE = −2.0 V, IC = −0.7 A 50 Low level output voltage VOL ** VIN = −5.0 V, IC = −0.2 A Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA −0.4 V −0.3 V Input resistance R1 0.7 1.0 1.3 kΩ E-to-B resistance R2 0.7 1.0 1.3 kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % 2 − −0.3 Data Sheet D16171EJ1V0DS AP1 SERIES AP1F3P ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = −22 V, IE = 0 MAX. Unit −100 nA DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 200 470 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 300 − DC current gain hFE3 ** VCE = −2.0 V, IC = −0.7 A 50 Low level output voltage VOL ** VIN = −5.0 V, IC = −0.2 A −0.2 −0.4 Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA −0.65 −0.3 V − 200 V Input resistance R1 2.3 3.3 4.3 kΩ E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit 100 nA ** PW ≤ 350 µs, duty cycle ≤ 2 % AP1J3P ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = −22 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 300 600 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 300 700 − DC current gain hFE3 ** VCE = −2.0 V, IC = −0.7 A 135 600 − Low level output voltage VOL ** VIN = −5.0 V, IC = −0.15 A VIL ** VCE = −5.0 V, IC = −100 µA 0.14 0.3 V 0.3 V Input resistance R1 2.31 3.3 4.29 kΩ E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit −100 nA Low level input voltage ** PW ≤ 350 µs, duty cycle ≤ 2 % AP1L3N ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = −22 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 200 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3 ** VCE = −2.0 V, IC = −0.7 A 50 Low level output voltage VOL ** VIN = −5.0 V, IC = −0.15 A −0.45 V Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V − Input resistance R1 3.29 4.7 6.11 kΩ E-to-B resistance R2 7 10 13 kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % Data Sheet D16171EJ1V0DS 3 AP1 SERIES AP1A4M ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions TYP. VCB = −22 V, IE = 0 MAX. Unit −100 nA DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 200 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3 ** VCE = −2.0 V, IC = −0.7 A 50 Low level output voltage VOL ** VIN = −5.0 V, IC = −0.1 A −0.4 Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V − V Input resistance R1 7 10 13 kΩ E-to-B resistance R2 7 10 13 kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % 4 MIN. Data Sheet D16171EJ1V0DS AP1 SERIES TYPICAL CHARACTERISTICS (Ta = 25°°C) Data Sheet D16171EJ1V0DS 5 AP1 SERIES • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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