PRELIMINARY DATA SHEET SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of reliability. FEATURES High Linear Power and Gain Low Internal Modulation Distortion High Reliability Gold Metalization Emitter Ballasting 24 V Operation APPLICATION Digital Cellular : PCN/PCS etc. Digital Cordless : PHS etc. ORDERING INFORMATION Part Number Package Outline NEL2012F03-24 F03 PACKAGE DIMENSIONS PIN CONNECTIONS (Unit: mm) 1. EMITTER 2. BASE 1 18.9 ± 0.3 14.2 ± 0.3 6.35 ± 0.4 1.53 ± 0.3 2.17 ± 0.3 0.1+0.05 –0.02 3 3. COLLECTOR 4.67 ± 0.4 2 14.35 ± 0.4 6.35 ± 0.4 2.8 ± 0.2 2 × φ 3.3 ± 0.3 The information in this document is subject to change without notice. Document No. P11768EJ1V0DS00 (1st edition) Date Published June 1997 N Printed in Japan © 1996 NEL2012F03-24 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETERS SYMBOL Specified Condition RATINGS UNIT 45 V 30 V Collector to Base Voltage VCBO Collector to Emitter Voltage VCER Emitter to Base Voltage VEBO 3 V Collector to Emitter Voltage VCEO 18 V Collector Current IC 4 A Total Power Dissipation PT 41.5 W Rth (j-c) 4.2 °C/W Junction Temperature Tj 200 °C Storage Temperature Tstg ð65 to +150 °C Thermal Resistance R = 10 : ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETERS SYMBOL Specified Condition MIN. TYP. MAX. UNIT 8 mA Collector to Emitter Cutoff Current ICES VCE = 24 V Collector to Emitter Voltage VCER IC = 8 mA, R = 10 : 30 85 V Collector to Emitter Voltage VCEO IC = 8 mA 18 22 V Collector to Base Voltage VCEO IC = 8 mA 45 85 V Emitter to Base Voltage VEBO IC = 20 mA 3 4.4 V 30 100 DC Current Gain hFE VCE = 5 V, IC = 0.8 A Output Capacitance Cob VCE = 24 V, freq = 1 MHz 150 12.6 pF PERFORMANCE SPECIFICATIONS (TA = 25 °C) CLASS AB OPERATION (Unless otherwise specified, freq = 1.97 GHz, VCC = 24 V, Iq = 75 mA) PARAMETERS Output Power SYMBOL Specified Condition P1dB MIN. TYP. MAX. UNIT 12 16 W 40 55 % Collector Efficiency KC Pout = P1dB Linear Gain GL Pin = 0.5 W 10.9 dB 3rd Order Intermodulation IM3 'freq = 100 kHz, 12 W PEP ð33 dBc CLASS A OPERATION (Unless otherwise specified, freq = 1.97 GHz, VCC = 20 V, Iq = 750 mA) PARAMETERS Output Power 2 SYMBOL Specified Condition P1dB MIN. TYP. MAX. UNIT 5 W 35 % Collector Efficiency KC Pout = P1dB Linear Gain GL Pin = 0.07 W 13.8 dB 3rd Order Intermodulation IM3 'freq = 100 kHz, 2.5 W PEP ð35 dBc NEL2012F03-24 NEL2012F03-24 Typical Pout-Gain, Collector Efficiency (N C) and Collector Current (IC) Characteristics Class AB Gain [dB] Nc [%] Ic [A] 18 3 17 2.8 16 2.6 15 2.4 2.2 14 100 2 90 1.8 11 80 1.6 10 70 1.4 9 60 1.2 8 50 1 13 Gain 12 40 .8 6 30 .6 5 20 .4 4 10 .2 7 Nc Ic 0 Pout [dBm] 3 28 30 32 34 36 38 40 42 freq = 1.970 GHz UCC = 24.0 V Icq = 0.075 A 0 Class A Gain [dB] Nc [%] Ic [A] 18 3 17 2.8 16 2.6 Gain 15 2.4 2.2 14 13 100 2.0 12 90 1.8 11 80 1.6 10 70 1.4 9 60 1.2 50 1 8 Nc Ic 40 .8 6 30 .6 5 20 .4 4 10 .2 7 3 24 26 28 30 32 34 36 38 0 Pout [dBm] freq = 1.970 GHz UCC = 20.0 V Icq = 0.750 A 0 3 NEL2012F03-24 NEL2012F03-24 Typical Pout (PEP) - Intermodulation (IM) Characteristics Class AB (f = 1.97 GHz, VCC = 24 V, Icq = 0.075A) IM –20 [dBc] IM3 –30 IM5 –40 IM7 –50 –60 20 30 40 POUT (PEP)[dBm] Class A (f = 1.97 GHz, VCC = 20 V, Icq = 0.75A) IM –20 [dBc] –30 –40 IM5 –50 IM3 IM7 –60 20 30 POUT (PEP)[dBm] 4 40 NEL2012F03-24 NEL2012F03-24 Frequency Characteristics VCC = 24 v Icq = 0.075 A (Class AB) 45 12 44.5 11 44 10 9 43 8 42.5 7 42 6 41.5 5 41 4 40.5 3 40 2 1.9 1.92 1.94 1.96 1.98 GL GL [dB] P1dB [dBm] P1dB 43.5 2 Freq [GHz] 5 NEL2012F03-24 1.4 0.2 0.6 1.6 0.7 0.8 0.9 1.0 NEL2012F03-24 Zin/Zout 5 0. 2.0 1.8 0.2 4 0. 0.4 POS ITIV ER EA CT A ––+JX NCE ZO–– CO M P T EN ON 0 0.6 0.3 ) 3. 0.8 ( 4.0 0 1. 0 1. 8 0. 1 0.6 2 0.4 20 50 10 5.0 4.0 3.0 1.8 2.0 1.4 1.2 1.0 0.8 0.9 0.7 0.6 0.5 0.4 0.3 0.2 50 REACTANCE COMPONENT 50 0.1 20 1 : 1.8 GHz 2 : 1.9 3 : 1.97 4 : 2.0 0.2 0.1 0 10 3 1.6 0.2 ZIN 4 1 2 4 3 ZOUT 6.0 R ( –––– Z ) O 20 0.4 0.1 10 0.6 8 0 T NEN PO 0. 1. 6.0 0 ) OM EC NC TA X C A – –J–O– RE –Z E IV 1. 4.0 0.2 ( 0.8 0 0.6 3. 0.3 4 NE GA T 1.8 0.6 2.0 0. 5 0.4 0. 1.4 1.2 1.0 0.9 0.8 0.7 1.6 0.2 Z0 = 50 : f [GHz] Zin [:] Zout [:] 1.80 4.3 + j8.9 2.6 + j2.2 1.90 3.1 + j7.4 2.4 + j1.3 1.97 2.6 + j6.3 2.2 + j0.6 2.00 2.4 + j5.9 2.2 + j0.4 Zout Zin 6 NEL2012F03-24 NEL2012F03-24 Class A S-Parameters VCC = 20 V, Icq = 0.75 A Freq S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.70 0.846 167.1 1.063 47.2 0.034 53.2 0.793 ð178.0 1.71 0.844 167.1 1.074 46.1 0.034 53.2 0.798 ð178.2 1.72 0.842 167.2 1.077 44.5 0.033 51.2 0.803 ð177.7 1.73 0.841 167.4 1.080 43.3 0.032 50.7 0.809 ð177.8 1.74 0.840 167.5 1.080 42.2 0.033 49.2 0.812 ð177.7 1.75 0.839 167.6 1.081 41.1 0.032 48.0 0.814 ð178.0 1.76 0.837 167.7 1.089 40.1 0.031 47.7 0.822 ð177.7 1.77 0.837 167.9 1.095 38.3 0.030 46.4 0.830 ð177.5 1.78 0.836 168.0 1.098 36.7 0.030 46.5 0.832 ð177.6 1.79 0.835 168.2 1.094 35.3 0.029 46.4 0.838 ð177.9 1.80 0.834 168.4 1.083 34.1 0.029 45.7 0.849 ð178.2 1.81 0.835 168.5 1.077 32.7 0.028 45.2 0.850 ð178.0 1.82 0.834 168.8 1.080 31.5 0.028 43.9 0.855 ð178.1 1.83 0.833 168.9 1.078 30.3 0.028 42.2 0.860 ð178.4 1.84 0.833 169.1 1.070 28.8 0.027 42.3 0.872 ð178.5 1.85 0.835 169.3 1.059 27.4 0.026 41.7 0.872 ð178.9 1.86 0.833 169.4 1.047 26.7 0.025 41.5 0.880 ð178.9 1.87 0.833 169.6 1.044 25.9 0.025 38.6 0.889 ð178.9 1.88 0.835 169.9 1.054 25.1 0.024 36.1 0.893 ð179.1 1.89 0.836 170.0 1.063 23.9 0.023 36.4 0.897 ð179.5 1.90 0.837 170.2 1.063 22.3 0.021 35.1 0.906 ð179.9 1.91 0.839 170.4 1.059 20.2 0.021 33.8 0.910 ð180.0 1.92 0.842 170.5 1.052 18.6 0.019 33.6 0.915 179.9 1.93 0.845 170.6 1.048 17.4 0.019 31.6 0.918 179.3 1.94 0.846 170.7 1.042 15.7 0.017 31.3 0.924 179.2 1.95 0.848 171.0 1.036 14.1 0.016 30.4 0.930 179.0 1.96 0.851 171.1 1.032 12.1 0.015 31.2 0.936 178.4 1.97 0.854 171.1 1.014 9.9 0.014 31.6 0.942 178.2 1.98 0.857 171.2 0.992 8.5 0.013 30.9 0.943 177.6 1.99 0.860 171.4 0.969 7.6 0.012 30.6 0.951 177.3 2.00 0.863 171.5 0.962 6.7 0.011 29.6 0.954 177.1 7 NEL2012F03-24 NEL2012F03-24 Class AB S-Parameters VCC = 24 V, Icq = 0.075 A Freq 8 S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.70 0.916 166.1 0.366 28.1 0.019 63.0 0.938 ð175.4 1.71 0.915 166.0 0.371 27.5 0.019 63.5 0.940 ð175.8 1.72 0.912 165.9 0.375 26.1 0.019 63.0 0.942 ð175.9 1.73 0.911 165.9 0.376 24.9 0.018 62.4 0.943 ð176.1 1.74 0.910 165.8 0.378 24.3 0.018 62.0 0.944 ð176.3 1.75 0.909 165.8 0.378 23.7 0.018 61.1 0.944 ð176.6 1.76 0.906 165.6 0.381 23.2 0.017 61.4 0.946 ð176.8 1.77 0.905 165.5 0.382 21.8 0.017 62.3 0.950 ð177.0 1.78 0.903 165.5 0.387 20.4 0.017 61.6 0.949 ð177.2 1.79 0.901 165.4 0.386 19.4 0.017 63.3 0.951 ð177.5 1.80 0.899 165.4 0.384 18.4 0.017 61.5 0.954 ð177.8 1.81 0.897 165.3 0.382 17.4 0.017 61.0 0.954 ð177.9 1.82 0.896 165.3 0.385 16.4 0.017 59.6 0.958 ð178.1 1.83 0.893 165.3 0.387 15.8 0.017 60.4 0.957 ð178.5 1.84 0.890 165.2 0.383 14.3 0.016 60.0 0.962 ð178.6 1.85 0.890 165.3 0.383 13.3 0.016 60.0 0.962 ð178.9 1.86 0.886 165.2 0.383 12.5 0.015 58.4 0.963 ð178.9 1.87 0.883 165.2 0.385 12.5 0.016 56.7 0.964 ð179.2 1.88 0.882 165.3 0.388 11.9 0.015 55.9 0.968 ð179.5 1.89 0.879 165.3 0.396 10.6 0.014 55.3 0.967 ð179.6 1.90 0.877 165.4 0.402 9.5 0.014 53.6 0.967 180.0 1.91 0.876 165.4 0.403 7.3 0.013 55.3 0.968 179.8 1.92 0.874 165.5 0.403 6.0 0.013 53.7 0.968 179.6 1.93 0.873 165.4 0.405 4.6 0.012 54.0 0.968 179.2 1.94 0.871 165.5 0.402 3.2 0.012 51.1 0.969 179.1 1.95 0.869 165.6 0.408 1.7 0.011 52.4 0.969 178.9 1.96 0.867 165.7 0.407 ð0.8 0.011 49.9 0.970 178.6 1.97 0.867 165.8 0.405 ð2.8 0.009 51.3 0.971 178.3 1.98 0.865 165.9 0.401 ð4.3 0.009 51.8 0.971 178.0 1.99 0.864 166.0 0.396 ð5.2 0.008 50.6 0.971 177.7 2.00 0.863 166.2 0.393 ð6.3 0.007 50.6 0.972 177.5 NEL2012F03-24 Circuit Drawing 40 mm 40 mm Through Hole 1 1 mmφ × 4 1 1 5 1 1 5 15 2 22 8 9.5 1 8 15 8 22 5 1 1 1 12.6 8.9 0.5 0.5 1 1 1 2 1 6 1 3 1 1 2.3 4.2 3.3 2 7.6 2 2.3 50 mm 11 2 6.6 6 18.2 7.4 18.2 Input Output SUBSTRATE (TEFLON) DICLAD522T® THICKNESS = 0.79 mm DOUBLE SIDE 35 Pm Cu Hr = 2. 6 NEL2012F03-24 9 NEL2012F03-24 Components Layout VBB R3 R1 C2 C4 This lead is placed near device flange. VCC D1 C3 R2 L1 C4 C1 Input Output R1: 5.1 : R2: 50 : R3: 47 : L1: 5 mmI 10T Coil C1, C2, C3, C5: MURATA, 47 pF C4: 100 PF (50 V) Electrolytic Capacitor D1: V06C NEL2012F03-24 10 NEL2012F03-24 [MEMO] 11 NEL2012F03-24 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5