NEC PS2631

DATA SHEET
PHOTO COUPLERS
PS2631, PS2631L
HIGH COLLECTOR VOLTAGE 6PIN PHOTO COUPLER
DESCRIPTION
PS2631, PS2631L are optically coupled isolators containing a GaAs light emitting diode and a silicon photo
transistor.
PS2631 is in a plastic DIP (Dual In-line Package).
PS2631L is lead bending type (Gull-wing) for surface mount.
FEATURES
• High input to output isolation voltage. (BV: 5 kVr.m.s. MIN.)
• High collector to emitter voltage (VCEO). (VCEO: 200 V MIN.)
• High speed switching (tr, tf = 10 µs TYP.)
• UL recognized [File No. E72422 (S)]
• Taping Product number (PS2631L-E3, E4)
APPLICATIONS
Interface circuit for various instrumentations, control equipments.
• AC Line/Digital Logic ·················································· Isolate high voltage transient
• Digital Logic/Digital Logic ··········································· Eliminate spurious ground loops
• Twisted Pair line receiver ··········································· Eliminate ground loop pick-up
• Telephone/Telegraph line receiver ···························· Isolate high voltage transient
• High Frequency Power Supply Feedback Control ···· Maintain floating ground
Document No. P11436EJ2V0DS00 (2nd editon)
(Previous No. LC-2261)
Date Published June 1996 P
Printed in Japan
©
1990
PS2631, PS2631L
PACKEGE DIMENSIONS (Unit: mm)
DIP (Dual In-line Package)
Lead Bending type (Gull-wing)
PS2631
PS2631L
4
1
3
3
3.8 MAX.
1.34
2.54
0.50 ± 0.10
2.54
MAX.
0.25 M
PIN CONNECTION (Top View)
PS2631, PS2631L
6
1
2
1
7.62
6.5
5
2
4
3
1. Anode
2. Cathode
3. NC
4. Emitter
5. Collector
6. Base
2.54
1.34 ± 0.10
0 to 15˚
0.05 to 0.2
6
10.16 MAX.
6
4
0.65
2.8 MIN. 4.55 MAX.
3.8
MAX.
10.16 MAX.
2.54
MAX.
0.25 M
7.62
6.5
0.9 ± 0.25
9.60 ± 0.4
PS2631, PS2631L
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Diode
Reverse Voltage
Forward Current
Power Dissipation Temperature Coefficient
Power Dissipation
Transistor
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation Temperature Coefficient
Power Dissipation
Isolation Voltage*1)
Storage Temperature
Operating Temperature
VR
IF
∆PD/˚C
PD
6
80
1.5
150
V
mA
mW/˚C
mW
VCEO
VECO
IC
∆PC/˚C
PC
BV
Tstg
Topt
200
6
50
3.0
300
5 000
–55 to +150
–55 to +100
V
V
mA
mW/˚C
mW
V ac
°C
°C
*1) AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output.
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
Diode
Transistor
Coupled
Forward Voltage
VF
Reverse Current
IR
Capacitance
Ct
Collector to Emitter Dark Current
ICEO
DC Current Gain
hFE
Current Transfer
Ratio*2)
Collector Saturation Voltage
CTR (IC/IF)
MIN.
TYP.
MAX.
UNIT
1.1
1.4
V
IF = 10 mA
5
µA
VR = 5 V
pF
V = 0, f = 1.0 MHz
nA
VCE = 200 V, IF = 0
50
200
300
50
VCE(sat)
TEST CONDITIONS
IC = 2 mA, VCE = 5.0 V
280
%
IF = 5 mA, VCE = 5.0 V
0.25
V
IF = 10 mA, IC = 2.0 mA
Ω
Vin-out = 1.0 kV
1011
Isolation Resistance
R1-2
Isolation Capacitance
C1-2
0.5
pF
V = 0, f = 1.0 MHz
tr
10
µs
VCC = 5 V, IF = 10 mA, RL = 1 kΩ
tf
10
µs
VCC = 5 V, IF = 10 mA, RL = 1 kΩ
Rise
Fall
*2)
SYMBOL
Time*3)
Time*3)
CTR rank (%)
*3) Test Circuit for Switching Time
K : 130 to 280
L : 80 to 150
M : 50 to 100
Pulse input
VCC = 5 V
 Pulse width = 100 µs

 Duty cycle = 1/10
IF
50
VOUT
RL = 1 k Ω
3
PS2631, PS2631L
TYPICAL CHARACTERISTICS (TA = 25 °C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
60
80 mA
60 mA
50 mA
50
100 ˚C
60 ˚C
25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
10
5
Collector Current ICE (mA)
Forward Current IF (mA)
50
1
0.5
0.1
40 mA
40
30 mA
30
20 mA
20
15 mA
10 mA
10
0.8
0.7
0.9
1.0
1.1
1.2
1.3
1.4
1.5
IF = 5 mA
Forward Voltage VF (V)
0
5
10
20
25
15
Collector to Emitter Voltage VCE (V)
30
COLLECTOR TO EMITTER DARK CURRENT
vs. AMBIENT TEMPERATURE
NORMALIZED OUTPUT CURRENT vs.
AMBIENT TEMPERATURE
10000
1.4
1000
,
,,
,
40 V
1.2
20 V
10 V
100
VCE = 200 V
10
CTR (Relative Value)
Collector Cutoff Current ICEO (nA)
1.6
1.0
0.8
0.6
Normalized to 1.0
at TA = 25 ˚C
IF = 5 mA
VCE = 5 V
0.4
0.2
1
–50
–25
0
25
50
75
–50
100
–25
Ambient Temperature TA (˚C)
0
25
50
75
100
Ambient Temperature TA (˚C)
NORMALIZED OUTPUT CURRENT
vs. BASE RESISTANCE
CURRENT TRANSFER RATIO (CTR)
vs. FORWARD CURRENT
240
220
200
180
160
140
120
100
80
60
40
20
0.1
1.0
CTR = 200%
CTR = 190 %
CTR = 120 %
0.5 1.0
5.0 10
20 mA
0.8
0.6 10 mA
IF = 5 mA
0.4
0.2
CTR = 60%
IF (mA)
4
CTR (Relative Value)
CTR (%)
VCE = 5 V
50 100
50 k 100 k
500 k 1 M
Base to Emitter Resistance RB (Ω)
∞
PS2631, PS2631L
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
100
Power Dissipation PC (mW)
Power Dissipation PD (mW)
150
1.5 mW/˚C
50
0
25
50
75
100
125
150
200
3.0 mW/˚C
100
0
25
Ambient Temperature TA (˚C)
75
100
125
150
Ambient Temperature TA (˚C)
SWITCHING TIME vs.
LOAD RESISTANCE
1000
50
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
50
IF = 10 mA
VCC = 5 V
80 mA
40 mA
20 mA
tf
10
ts
Collector Current IC (mA)
Switching Time (µ s)
100
10
td
tr
10 mA
5
IF = 5 mA
1.0
1
0.5
1
5
10
50 100
0.1
Load Resistance RL (kΩ)
0
0.2
0.4
0.6
0.8
1.0
Collector Saturation Voltage VCE (sat) (V)
FREQUENCY RESPONSE
Relative Output Aν
1.0
0.8
RL = 100 Ω
0.6
RL = 1 kΩ
0.4
0.2
0
500 1 k
5 k 10 k
50 k 100 k
500 k
Frequency (Hz)
5
PS2631, PS2631L
NOTES AT MOUNTING
(1) NOTES AT MOUNTING BY INFRARED REFLOW SOLDERING
• Peak temperature
:
235 °C or less (resin surface temperature)
• Time
:
Within 30 sec. (timing during which resin surface temperature is 210 ˚C or more)
• Number of times of reflow :
Three
• Flux
Rosin flux with little chlorine is recommended.
:
Reflow Temperature Profile
Resin surface temperature (˚C)
(ACTUAL HEAT)
to 10 s
235 ˚C MAX.
210 ˚C
to 30 s
120 to 160 ˚C
60 to 90 s
Time (s)
<NOTES>
(1) Please avoid to be remove the residual flux by water after the first reflow processes.
Peak Temperature 235 ˚C or Lower
(2) NOTES AT MOUNTING BY DIP SOLDERING
• Temperature : 260 °C or less
6
• Time
: Within 10 sec.
• Flux
: Rosin flux with little chlorine is recommended.
PS2631, PS2631L
[MEMO]
7
PS2631, PS2631L
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
12