NEC PS8701-F4

DATA SHEET
PHOTOCOUPLER
PS8701
HIGH NOISE REDUCTION HIGH-SPEED ANALOG OUTPUT TYPE
5-PIN SOP PHOTOCOUPLER
DESCRIPTION
The PS8701 is an optically coupled isolator containing a GaAlAs LED on the light emitting diode (input side) and a
PIN photodiode and a high-speed amplifier transistor on the output side on one chip.
This is a plastic SOP (Small Out-line Package) type for high density applications.
FEATURES
• High common mode transient immunity (CMH, CML = ±10 kV/µs MIN.)
• High supply voltage (VCC = 35 V)
• High isolation voltage (BV = 2 500 Vr.m.s.)
• High-speed response (tPHL = 0.8 µs MAX., tPLH = 1.2 µs MAX.)
• Taping product number (PS8701-E3, E4, F3, F4)
APPLICATIONS
• Computer and peripheral manufactures
• General purpose inverter
• Substitutions for relays and pulse transformers
• Power supply
PACKAGE DIMENSIONS
in millimeters
4.5 MAX.
TOP VIEW
5
4
3
1. Anode
2. Cathode
3. GND
4. VO
5. VCC
1
2
7.0±0.3
1.3
0.15 +0.10
–0.05
2.0
0.1±0.1
2.3 MAX.
4.4
1.27
0.4 +0.10
–0.05
1.2 MAX.
0.5±0.3
0.25 M
The information in this document is subject to change without notice.
Document No. P12846EJ1V0DS00 (1st edition)
Date Published August 1997 NS
Printed in Japan
©
1997
PS8701
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Forward Current
IF
25
mA
Reverse Voltage
VR
3.0
V
Power Dissipation
PD
45
mW
Supply Voltage
VCC
35
V
Output Voltage
VO
35
V
Output Current
IO
8.0
mA
Power Dissipation
PC
100
mW
Isolation Voltage
BV
2 500
Vr.m.s.
Operating Ambient Temperature
TA
–55 to +100
°C
Storage Temperature
Tstg
–55 to +125
°C
Diode
Detector
*1
*1 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Diode
VF
IF = 16 mA
Reverse Current
IR
VR = 3 V
Terminal Capacitance
Coupled
2
Conditions
Forward Voltage
Forward Voltage
Temperature Coefficient
Detector
Symbol
∆VF/∆T
Ct
MIN.
TYP.
MAX.
Unit
1.7
2.2
V
10
µA
−1.6
mV/°C
V = 0 V, f = 1 MHz
60
pF
3
IF = 16 mA
High Level Output Current
IOH (1)
IF = 0 mA, VCC = VO = 5.5 V
High Level Output Current
IOH (2)
IF = 0 mA, VCC = VO = 30 V
Low Level Output Voltage
VOL
IF = 16 mA, VCC = 4.5 V, IO = 1.2 mA
0.1
Low Level Supply Current
ICCL
IF = 16 mA, VO = open, VCC = 30 V
50
High Level Supply Current
ICCH
IF = 0 mA, VO = open, VCC = 30 V
0.01
2
Current Transfer Ratio
CTR
IF = 16 mA, VCC = 4.5 V, VO = 0.4 V
20
35
15
500
nA
100
µA
0.4
V
µA
%
Ω
11
Isolation Resistance
RI-O
VI-O = 1 kVDC, RH = 40 to 60 %
10
Isolation Capacitance
CI-O
V = 0 V, f = 1 MHz
0.4
Propagation Delay Time
*1
(H → L)
tPHL
IF = 16 mA, VCC = 5 V, RL = 2.2 kΩ,
CL = 15 pF
0.5
0.8
Propagation Delay Time
*1
(L → H)
tPLH
0.6
1.2
Common Mode
Transient Immunity at
*2
High Level Output
CMH
IF = 0 mA, VCC = 5 V, RL = 4.1 kΩ,
VCM = 1.5 kV
10
Common Mode
Transient Immunity at
*2
Low Level Output
CML
IF = 16 mA, VCC = 5 V, RL = 4.1 kΩ,
VCM = 1.5 kV
−10
pF
µs
kV/µs
PS8701
*1 Test circuit for propagation delay time
Pulse input
0.1 µ F
(Pulse width = 100 µ s,
Duty cycle = 1/10)
Input
(Monitor)
Input
VCC = 5 V
RL = 2.2 kΩ
VO (Monitor)
CL = 15 pF
50 %
5V
Output
1.5 V
VOL
47 Ω
tPHL
tPLH
CL is approximately 15 pF which includes probe and stray wiring capacitance
*2 Test circuit for common mode transient immunity
1.5 kV
VCM 90 %
IF
0.1 µ F
VCC = 5 V
RL = 4.1 kΩ
VO (Monitor)
10 %
tr
VO
(IF = 0 mA)
VCM
VO
(IF = 16 mA)
0V
tf
5V
2V
0.8 V
VOL
USAGE CAUTIONS
1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static
electricity when handling.
2. By-pase capacitor of more than 0.1 µF is used between VCC and GND near device.
3
PS8701
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation PC (mW)
40
30
20
10
25
0
50
75
40
20
50
75
100
HIGH LEVEL OUTPUT CURRENT vs.
AMBIENT TEMPERATURE
TA = +100 ˚C
+50 ˚C
+25 ˚C
1
0 ˚C
–25 ˚C
0.1
1.2
1.4
1.6
1.8
2.0
2.2
IF = 0 mA
100
VCC = VO = 30 V
VCC = VO = 5.5 V
10
1
0.1
–25
2.4
0
25
50
75
100
Forward Voltage VF (V)
Ambient Temperature TA (˚C)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
VCC = 4.5 V,
VO = 0.4 V
70
60
50
40
30
20
10
0
0.5
25
FORWARD CURRENT vs.
FORWARD VOLTAGE
High Level Output Current IOH (nA)
Forward Current IF (mA)
60
Ambient Temperature TA (˚C)
80
Current Transfer Ratio CTR (%)
80
1 000
0.01
1.0
1
5
10
Forward Current IF (mA)
4
100
Ambient Temperature TA (˚C)
100
10
120
0
100
50
Normalized Current Transfer Raio CTR
Diode Power Dissipation PD (mW)
50
1.6
Normalized to 1.0
at TA = 25 ˚C, IF = 16 mA,
VCC = 4.5 V, VO = 0.4 V
1.4
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
1.2
1.0
0.8
0.6
0.4
0.2
0.0
–50
–25
0
25
50
75
Ambient Temperature TA (˚C)
100
PS8701
OUTPUT VOLTAGE vs.
FORWARD CURRENT
OUTPUT CURRENT vs.
OUTPUT VOLTAGE
6
Output Voltage VO (V)
IF = 25 mA
6
20 mA
15 mA
4
10 mA
5 mA
2
0
Propagation Delay Time tPHL, tPLH (µs)
5
8
2
4
6
8
10 12
14 16
RL = 2.2 kΩ
2
0
18 20
5.6 kΩ
2
4
6
8
10
12
14 16
18 20
Forward Current IF (mA)
PROPAGATION DELAY TIME vs.
FORWARD CURRENT
PROPAGATION DELAY TIME vs.
LOAD RESISTANCE
VCC = 5 V,
RL = 2.2 kΩ
2.0
tPHL
1.0
tPLH
5
10
15
20
25
Forward Current IF (mA)
Normalized Propagation Delay Time tPHL, tPLH
3
Output Voltage VO (V)
3.0
0
4
1
Propagation Delay Time tPHL, tPLH (µs)
Output Current IO (mA)
10
10
VCC = 5 V,
IF = 16 mA
tPLH
1
tPHL
0.1
1k
10 k
100 k
Load Resistance RL (Ω)
NORMALIZED PROPAGATION DELAY TIME
vs. AMBIENT TEMPERATURE
5
Normalized to 1.0
at TA = 25 ˚C,
IF = 16 mA, VCC = 5 V,
RL = 2.2 kΩ
4
3
2
tPLH
tPHL
1
0
–50
–25
0
25
50
75
100
Ambient Temperature TA (˚C)
5
PS8701
TAPING SPECIFICATIONS (in millimeters)
1.55±0.1
2.4±0.1
4.6±0.1
7.4±0.1
5.5±0.1
1.55±0.1
12.0±0.2
2.0±0.1
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
0.3
8.0±0.1
Taping Direction
PS8701-E4
PS8701-F4
PS8701-E3
PS8701-F3
Outline and Dimensions (Reel)
1.5±0.5
˚
6.0±1
Packing: PS8701-E3, E4 900 pcs/reel
PS8701-F3, F4 3 500 pcs/reel
6
φ 13.0±0.5
2.0±0.5
60
1.5±0.1
˚
φ 66
120
PS8701-E3, E4: φ 178
PS8701-F3, F4: φ 330
φ 21.0±0.8
1.5±0.1
12.4 +2.0
–0.0
18.4 MAX.
PS8701
RECOMMENDED SOLDERING CONDITIONS
(1) Infrared reflow soldering
• Peak reflow temperature
235 °C (package surface temperature)
• Time of temperature higher than 210 °C
30 seconds or less
• Number of reflows
Three
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
Package Surface Temperature T (˚C)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
235 ˚C (peak temperature)
210 ˚C
to 30 s
120 to 160 ˚C
60 to 90 s
(preheating)
Time (s)
Caution Please avoid to removed the residual flux by water after the first reflow processes.
Peak temperature 235 ˚C or below
(2) Dip soldering
• Temperature
260 °C or below (molten solder temperature)
• Time
10 seconds or less
• Number of times
One
• Flux
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
7
PS8701
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5