DATA SHEET SILICON TRANSISTOR ARRAY µPA1476 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1476 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 2.5 • Easy mount by 0.1 inch of terminal interval. • High hFE for Darlington Transistor. • Surge Absorber (Zener Diode) built in. MIN. 10 FEATURES ORDERING INFORMATION 1.4 Part Number Package Quality Grade µPA1476H 10 Pin SIP Standard 1.4 0.5 ±0.1 2.54 0.6 ±0.1 1 2 3 4 5 6 7 8 9 10 CONNECTION DIAGRAM Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 3 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage VCBO 100 ±15 V Collector to Emitter Voltage VCEO 100 ±15 V 5 4 7 6 9 8 1 10 Emitter to Base Voltage VEBO 8 V Collector Current (DC) IC(DC) ±2 A/unit Collector Current (pulse) IC(pulse)* ±3 A/unit PIN No. Base Current (DC) IB(DC) 0.2 A/unit 2, 4, 6, 8 : Base (B) 3, 5, 7, 9 : Collector (C) : Emitter (E) 1, 10 Total Power Dissipation PT1** 3.5 W Total Power Dissipation PT2*** 28 W Junction Temperature TJ 150 ˚C Storage Temperature Tstg –55 to +150 ˚C (C) (B) R1 . R1 = . 10 kΩ . R2 = . 900 Ω R2 (E) * PW ≤ 300 µs, Duty Cycle ≤ 10 % ** 4 Circuits, Ta = 25 ˚C *** 4 Circuits, Tc = 25 ˚C The information in this document is subject to change without notice. Document No. IC-3565 Date Published November 1994 P Printed in Japan © 1994 µPA1476 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. MAX. UNIT 1.0 µA VCB = 75 V, IE = 0 1.0 mA VEB = 5 V, IC = 0 20000 — VCE = 2 V, IC = 1 A — VCE = 2 V, IC = 2 A 1.5 V IC = 1 A, IB = 1 mA 2 V IC = 1 A, IB = 1 mA 1 µs tstg 1.2 µs tf 0.4 µs IC = 1 A IB1 = –IB2 = 2 mA VCC =.. 50 V, R L =.. 50 Ω See test circuit Collector Leakage Current ICBO Emitter Leakage Current IEBO DC Current Gain hFE1 * 2000 DC Current Gain hFE2 * 500 Collector Saturation Voltage VCE(sat) * Base Saturation Voltage VBE(sat) * Turn On Time ton Storage Time Fall Time TYP. TEST CONDITIONS * PW ≤ 350 µ s, Duty Cycle ≤ 2 % / pulsed SWITCHING TIME TEST CIRCUIT . RL =. 50 Ω VIN IB1 IB2 PW . 50 µ s PW = . Duty Cycle ≤ 2 % IC Base Current Wave Form IB1 IB2 T.U.T. . –5 V VBB = . . 50 V VCC = . 90 % Collector Current Wave Form IC 10 % ton tstg tf The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 µPA1476 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING CURVE OF SAFE OPERATING AREA SAFE OPERATING AREA µs m Li d ite 10 1 50 100 150 TC - Case Temperature - ˚C s s b TC = 25 ˚C Single Pulse 0.1 m m S/ d ite 20 0 0 1 10 m Li 40 s D Lim issip ite atio d n 1 n io t pa si is d 0 10 ite = 60 Lim 20 IC (DC) µ S/b IC (pulse) PW 80 IC - Collector Current - A 100 D dT - Percentage of Rated Current - % 10 100 VCE - Collector to Emitter Voltage - V TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 4 Circuits Operation 4 PT - Total Power Dissipation - W PT - Total Power Dissipation - W 30 NEC µ PA1476 4 Circuits Operation 3 Circuits Operation 3 2 Circuits Operation 1 Circuit Operation 2 1 25 50 75 100 125 Ta - Ambient Temperature - ˚C 0 150 3 Circuits Operation 2 Circuits Operation 10 0 10000 50 75 100 125 TC - Case Temperature - ˚C 150 10 ˚C 0 15 5 ˚C C = 7 5˚ C Ta 2 5˚ –2 100 10 0.01 VCE = 2.0 V 0.1 1 IC - Collector Current - A 10 VCE (sat) - Collector Saturation Voltage - V hFE - DC Current Gain 25 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 1 Circuit Operation 20 1 Ta = –25 ˚C 125 ˚C 75 ˚C 25 ˚C IC/IB = 1000 0.1 0.1 1 IC - Collector Current - A –10 3 µPA1476 BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT 100 10 VCE ≤ 10 V VBE (sat) - Base Saturation Voltage - V Rth (j-c) - Transient Thermal Resistance - ˚C/W TRANSIENT THERMAL RESISTANCE 10 1 0.1 Ta = –25 ˚C 1 25 ˚C 125 ˚C IC/IB = 1000 0.1 1 10 PW - Pulse Width - ms 0.1 100 0.1 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 1.6 140 120 1.2 0.8 1 IC - Collector Current - A 10 SWITCHING CHARACTERISTICS µA µA A 0 0 20 18 160 µ 100 IC/IB = 500 µA µA ton - Turn On Time - µs tstg - storage Time - µs tf - Fall Time - µs 22 0 µA 2.0 IC - Collector Current - A 75 ˚C A 100 µ IB = 80 µ A 10 ton tstg 1 tf 0.4 0 4 1.0 2.0 3.0 4.0 VCE - Collector to Emitter Voltage - V 5.0 0.1 0.1 1 IC - Collector Current - A 10 µPA1476 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 5 µPA1476 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6