DATA SHEET SILICON TRANSISTOR ARRAY µPA1434 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1434 is NPN silicon epitaxial Power Transistor (in millimeters) Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. 4.0 26.8 MAX. FEATURES VCE(sat) = 0.5 V MAX. 2.5 hFE = 800 to 3200 (at IC = 0.5 A) 10 MIN. 10 • Easy mount by 0.1 inch of terminal interval. • High hFE. Low VCE(sat). (at IC = 2 A) 1.4 0.5 ±0.1 2.54 ORDERING INFORMATION 1.4 Part Number Package Quality Grade µPA1434H 10 Pin SIP Standard 0.6 ±0.1 1 2 3 4 5 6 7 8 910 CONNECTION DIAGRAM Please refer to “Quality grade on NEC Semiconductor Device” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on 5 3 7 9 the devices and its recommended applications. 2 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) Collector to Base Voltage 4 6 8 1 10 VCBO 60 V Collector to Emitter Voltage VCEO 60 V PIN NO. Emitter to Base Voltage VEBO 7 V Collector Current (DC) IC(DC) 3 A/unit Collector Current (pulse) IC(pulse)* 6 A/unit 2, 4, 6, 8: Base (B) 3, 5, 7, 9: Collector (C) 1, 10: Emitter (E) Base Current (DC) IB(DC) 0.6 A/unit Total Power Dissipation PT1** 3.5 W PT2** 28 W Junction Temperature Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C (Ta = 25 ˚C) Total Power Dissipation (Tc = 25 ˚C) * PW ≤ 300 µs, Duty Cycle ≤ 10 % ** 4 Circuits The information in this document is subject to change without notice. Document No. IC-3480 Date Published September 1994 P Printed in Japan © 1994 µPA1434 ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C) CHARACTERISTIC SYMBOL MIN. Collector Leakage Current ICBO Emitter Leakage Current IEBO DC Current Gain hFE1 * 800 DC Current Gain hFE2 * 500 Collector Saturation Voltage VCE(sat) * Base Saturation Voltage VBE(sat) * Turn On Time ton Storage Time tstg Fall Time tf TYP. MAX. UNIT 10 µA VCB = 60 V, IE = 0 TEST CONDITIONS 10 µA VEB = 5 V, IC = 0 3200 — VCE = 5 V, IC = 0.5 A — VCE = 5 V, IC = 3 A 0.5 V IC = 2 A, IB = 20 mA 1.2 V IC = 2 A, IB = 20 mA 1 µs 3 µs 1.5 µs IC = 2 A IB1 = –IB2 = 10 mA VCC =.. 50 V, R L =.. 25 Ω See test circuit * PW ≤ 350 µs, Duty Cycle ≤ 2 % /pulsed SWITCHING TIME TEST CIRCUIT RL = 25 Ω Base Current Wave Form IC VIN IB1 IB1 IB2 IB2 T.U.T. VCC = 50 V 90 % PW PW = 50 µ s Duty Cycle ≤ 2 % 2 VBB = –5 V IC Collector Current Wave Form 10 % ton tstg tf µPA1434 TYPICAL CHARACTERISTICS (Ta = 25 ˚C) DERATING CURVE OF SAFE OPERATING AREA SAFE OPERATING AREA 10 PW IC(pulse) MAX. = 10 30 µ 0µ s 30 s 0 s IC(DC) MAX. at ip n io m Li 40 0.5 d ite m Li ss d s ite m im 60 1 b S/ bL 50 S/ 0.1 d ite VCEO MAX. 80 Di Lim ssip ite atio n d µ s m 1 10 IC - Collector Current - A 100 Di dT - Percentage of Rated Current - % 5 0.05 20 TC = 25 ˚C Single Pulse 0.01 0 50 100 1 150 5 10 50 100 VCE - Collector to Emitter Voltage - V TC - Case Temperature - ˚C TOTAL POWER DISSIPATION vs. CASE TEMPERATURE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 30 4 Circuits Operation 4 4 Circuits Operation 3 Circuits Operation 3 2 Circuits Operation 1 Circuit Operation 2 1 0 25 50 75 100 125 PT - Total Power Dissipation - W PT - Total Power Dissipation - W NEC µ PA1434H 20 1 Circuit Operation 10 0 150 2 Circuits Operation 25 50 75 100 125 Ta - Ambient Temperature - ˚C TC - Case Temperature - ˚C TRANSIENT THERMAL RESISTANCE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 150 5 100 VCE ≤ 10 V 50 4 IC - Collector Current - A Rth(j-c) - Transient Thermal Resistance - ˚C/W 3 Circuits Operation 10 1 20 3 10 5 2 2 1 0.1 0.1 1 10 PW - Pulse Width - ms 100 0 1 A IB = 0.5 m 1 2 3 4 5 VCE - Collector to Emitter Voltage - V 3 µPA1434 BASE AND COLLECTOR SATURATION VOLTAGE vs.COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 10000 10 hFE - DC Current Gain 5000 2000 5 ˚C Ta = 12 1000 500 75 ˚C 25 ˚C –25 ˚C 200 IC = 100·IB Pulsed 5 VCE(sat) - Collector Saturation Voltage - V VBE(sat) - Base Saturation Voltage - V VCE = 5 V Pulsed 2 1 VBE(sat) 0.5 0.2 0.1 0.05 VCE(sat) 0.02 100 0.001 0.005 0.01 0.05 0.1 0.5 1 IC - Collector Current - A 4 5 10 0.01 0.001 0.005 0.01 0.05 0.1 0.5 1 IC - Collector Current - A 5 10 µPA1434 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 5 µPA1434 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6