DATA SHEET SILICON TRANSISTOR ARRAY µPA1436A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436A is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. 4.0 26.8 MAX. Easy mount by 0.1 inch of terminal interval. C-E Reverce Diode built in. 10 MIN. High hFE for Darlington Transistor. 2.5 • • • • 10 FEATURES High Speed Switching. 1.4 0.5 ±0.2 2.54 1.4 ORDERING INFORMATION Part Number Package Quality Grade µPA1436AH 10 Pin SIP Standard 0.6 ±0.2 1 2 3 4 5 6 7 8 910 CONNECTION DIAGRAM Please refer to “Quality grade on NEC Semiconductor 3 Device” (Document number IEI-1209) published by NEC 5 7 9 Corporation to know the specification of quality grade on the devices and its recommended applications. 2 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) 1 Collector to Base Voltage VCBO 150 V Collector to Emitter Voltage VCEO 100 V 8 V Emitter to Base Voltage VEBO Collector Current (DC) IC(DC) ±3 A/unit Collector Current (pulse) IC(pulse)* ±5 A/unit Base Current (DC) IB(DC) 0.3 A/unit Total Power Dissipation PT1** 3.5 W PT2** 28 W Junction Temperature Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C 4 6 8 10 (C) (B) R1 R2 (Ta = 25 ˚C) Total Power Dissipation (E) (Tc = 25 ˚C) * PW ≤ 350 µs, Duty Cycle ≤ 2 % ** 4 Circuits PIN NO. 2, 4, 6, 8: Base (B) 3, 5, 7, 9: Collector (C) 1, 10: Emitter (E) .. 5 kΩ R1 = .. 1.3 kΩ R2 = The information in this document is subject to change without notice. Document No. IC-3482 (O.D. No. IC-8705) Date Published September 1994 P Printed in Japan © 1994 µPA1436A ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT 1 µA VCB = 100 V, IE = 0 5 mA VEB = 5 V, IC = 0 20000 — VCE = 2 V, IC = 1.5 A — VCE = 2 V, IC = 3 A 1.5 V IC = 1.5 A, IB = 1.5 mA 2 V IC = 1.5 A, IB = 1.5 mA 0.3 µs tstg 1.5 µs tf 0.4 µs IC = 1.5 A IB1 = –IB2 = 3 mA VCC =.. 50 V, RL = 33 Ω See test circuit Collector Leakage Current ICBO Emitter Leakage Current IEBO DC Current Gain hFE1 * 2000 DC Current Gain hFE2 * 1000 Collector Saturation Voltage VCE(sat) * 1 Base Saturation Voltage VBE(sat) * 1.8 Turn On Time ton Storage Time Fall Time TEST CONDITIONS * PW ≤ 350 µs, Duty Cycle ≤ 2 % /pulsed SWITCHING TIME TEST CIRCUIT RL = 33 Ω Base Current Wave Form IC VIN IB1 IB1 IB2 IB2 T.U.T. VCC = 50 V 90 % PW PW = 50 µs Duty Cycle ≤ 2 % 2 VBB = –5 V IC Collector Current Wave Form 10 % ton tstg tf µPA1436A TYPICAL CHARACTERISTICS (Ta = 25 ˚C) DERATING CURVE OF SAFE OPERATING AREA SAFE OPERATING AREA 0.1 TC = 25 ˚C Single Pulse IC - Collector Current - A im d at io n Li m d ite Lim ip 40 S/b ite ss 60 0.1 s bL m 10 Di s m s Lim ssip ite atio n d m S/ =1 80 PW IC(DC) MAX.50 100 Di i te 0.1 VCEO MAX. d dT - Percentage of Rated Current - % IC(pulse) MAX. 20 0.01 0 50 100 150 1 10 100 1000 VCE - Collector to Emitter Voltage - V TC - Case Temperature - ˚C TOTAL POWER DISSIPATION vs. CASE TEMPERATURE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 30 4 Circuits Operation 4 PT - Total Power Dissipation - W PT - Total Power Dissipation - W NEC µ PA1436AH 4 Circuits Operation 3 Circuits Operation 3 2 Circuits Operation 1 Circuit Operation 2 1 0 25 50 75 100 125 3 Circuits Operation 20 1 Circuit Operation 10 0 150 Ta - Ambient Temperature - ˚C 200 100 2 µA 125 150 150 µA 120 µA VCE = 2.0 V Pulsed IC - Collector Current - A 400 µ A 30 0 µA IB = 100 µ A 1 1 75 3 50 2 0 50 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE A IC - Collector Current - A 3 25 TC - Case Temperature - ˚C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE µ 2 Circuits Operation 2 3 4 VCE - Collector to Emitter Voltage - V 3 2 1 0 1 2 3 VBE - Base to Emitter Voltage - V 3 µPA1436A COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 10 10000 IC/IB = 1000 Pulsed VCE(sat) - Collector Saturation Voltage - V hFE - DC Current Gain VCE = 2.0 V Pulsed 1000 100 0.01 1 0.1 10 1 0.1 IC - Collector Current - A 1 10 IC - Collector Current - A BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT TURN ON TIME. STORAGE TIME AND FALL TIME vs. COLLECTOR CURRENT 10 10 tf, tstg, ton - Switching Time - µ s VBE(sat) - Base Saturation Voltage - V IC/IB = 1000 Pulsed 1 1 IC - Collector Current - A 4 10 tstg 1 tf ton 0.1 1 IC - Collector Current - A 10 µPA1436A REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 5 µPA1436A [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6