DATA SHEET SILICON TRANSISTOR ARRAY µPA1456 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1456 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 2.5 • Easy mount by 0.1 inch of terminal interval. • High hFE for Darlington Transistor. MIN. 10 FEATURES ORDERING INFORMATION Part Number Package Quality Grade µPA1456H 10 Pin SIP Standard 1.4 1.4 0.5 ±0.1 2.54 0.6 ±0.1 1 2 3 4 5 6 7 8 9 10 Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. CONNECTION DIAGRAM 3 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) Collector to Base Voltage VCBO 150 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 7 V Collector Current (DC) IC(DC) ±5 A/unit Collector Current (pulse) IC(pulse)* ±10 A/unit 2 5 4 7 6 9 8 1 10 (C) Base Current (DC) IB(DC) 0.5 A/unit PIN No. Total Power Dissipation PT1** 3.5 W Total Power Dissipation PT2*** 28 W 2, 4, 6, 8 : Base (B) 3, 5, 7, 9 : Collector (C) : Emitter (E) 1, 10 Junction Temperature Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C * PW ≤ 300 µs, Duty Cycle ≤ 10 % (B) R1 . R1 = . 3.0 kΩ . R2 = . 300 Ω R2 (E) ** 4 Circuits, Ta = 25 ˚C *** 4 Circuits, Tc = 25 ˚C The information in this document is subject to change without notice. Document No. IC-3521 (O. D. No. IC-6340) Date Published September 1994 P Printed in Japan © 1994 µPA1456 ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT 10 µA VCB = 100 V, IE = 0 10 mA VEB = 5 V, IC = 0 20000 — VCE = 2 V, IC = 2 A — VCE = 2 V, IC = 4 A 1.5 V IC = 2 A, IB = 2 mA 2 V IC = 2 A, IB = 2 mA 1 µs tstg 3 µs tf 1 µs IC = 2 A IB1 = –IB2 = 2 mA VCC =.. 50 V, R L =.. 25 Ω See test circuit Collector Leakage Current ICBO Emitter Leakage Current IEBO DC Current Gain hFE1 * 2000 7000 DC Current Gain hFE2 * 500 3000 Collector Saturation Voltage VCE(sat) * 0.9 Base Saturation Voltage VBE(sat) * 1.6 Turn On Time ton Storage Time Fall Time TEST CONDITIONS * PW ≤ 350 µ s, Duty Cycle ≤ 2 % / pulsed SWITCHING TIME TEST CIRCUIT RL = 25 Ω VIN IB2 PW . 50 µ s PW = . Duty Cycle ≤ 2 % 2 IC IB1 Base Current Wave Form IB1 IB2 T.U.T. . –5 V VBB = . . 50 V VCC = . Collector Current Wave Form 90 % IC 10 % ton tstg tf µPA1456 TYPICAL CHARACTERISTICS (Ta = 25 ˚C) DERATING CURVE OF SAFE OPERATING AREA SAFE OPERATING AREA PW at ip io n 40 1 0.5 Li m d i te VCEO MAX. IC - Collector Current - A d µs ite 5 im bL S/ 60 2 10 ms ted i 0 im 0 bL s 1m s 3 m ms S/ D Li issi m pa ite ti d on 30 80 = 5 100 ss Di dT - Percentage of Rated Current - % 10 20 0.2 Single Pulse 0.1 50 100 150 TC - Case Temperature - ˚C 0 1 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 5 10 50 20 VCE - Collector to Emitter Voltage - V 100 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 4 Circuits Operation 4 4 Circuits Operation 3 Circuits Operation 3 2 Circuits Operation 1 Circuit Operation 2 1 0 25 50 75 100 125 Ta - Ambient Temperature - ˚C PT - Total Power Dissipation - W PT - Total Power Dissipation - W 30 NEC µ PA1456 150 3 Circuits Operation 2 Circuits Operation 10 0 VCE (sat) - Collector Saturation Voltage - V hFE - DC Current Gain 10 VCE = 2.0 V Pulse Test 10000 1000 T = a C 5˚ 12 5 ˚C 7 ˚C 25 ˚C 5 –2 100 10 0.01 0.1 1 IC - Collector Current - A 10 25 50 75 100 125 TC - Case Temperature - ˚C 150 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 100000 1 Circuit Operation 20 IC = 1000·IB Pulse Test 1 Ta = 125 ˚C 75 ˚C 25 ˚C –25 ˚C 0.1 0.1 1 IC - Collector Current - A –10 3 µPA1456 BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT 100 10 1.0 0.1 0.1 1 10 PW - Pulse Width - ms 100 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE IC - Collector Current - A 2.0 5 4 4 1. 1.0 0.8 0.6 0.4 3 2 IB = 0.2 mA 1 0 4 10 VCE ≤ 10 V VBE (sat) - Base Saturation Voltage - V Rth (j-c) - Transient Thermal Resistance - ˚C/W TRANSIENT THERMAL RESISTANCE 1 2 3 4 VCE - Collector to Emitter Voltage - V 5 IC = 1000·IB Pulse Test 1 0.1 0.1 Ta = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 1 IC - Collector Current - A 10 µPA1456 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 5 µPA1456 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6