DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2412 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2412 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high speed switching applications. 4.5 ±0.2 10.0 ±0.3 3.2 ±0.2 FEATURES 2.7 ±0.2 • Low On-Resistance QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended 0.7 ±0.1 13.5 MIN. 4 ±0.2 3 ±0.1 15.0 ±0.3 RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 10 A) • Low Ciss Ciss = 860 pF TYP. • Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings 12.0 ±0.2 RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 10 A) 2.5 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 2.54 0.65 ±0.1 applications. 1. Gate 2. Drain 3. Source ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±20 A Drain Current (pulse)* ID(pulse) ±80 A Total Power Dissipation (Tc = 25 ˚C) PT1 30 W Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Single Avalanche Current** IAS 20 A Single Avalanche Energy** EAS 22.5 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % 1 2 3 MP-45F(ISOLATED TO-220) Drain Gate Body Diode Gate Protection Diode Source ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 The information in this document is subject to change without notice. Document No. TC-2493 (O. D. No. TC-8031) Date Published November 1994 P Printed in Japan © 1994 2SK2412 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL Drain to Source On-Resistance MIN. TYP. RDS(on)1 MAX. UNIT 70 mΩ VGS = 10 V, ID = 10 A 67 95 mΩ VGS = 4 V, ID = 10 A 2.0 V VDS = 10 V, ID = 1 mA S VDS = 10 V, ID = 10 A 10 µA VDS = 60 V, VGS = 0 ±10 µA VGS = ±20 V, VDS = 0 50 Drain to Source On-Resistance RDS(on)2 Gate to Source Cutoff Voltage VGS(off) 1.0 1.6 Forward Transfer Admittance | yfs | 7.0 15 Drain Leakage Current IDSS TEST CONDITIONS Gate to Source Leakage Current IGSS Input Capacitance Ciss 860 pF VDS = 10 V Output Capacitance Coss 440 pF VGS = 0 Reverse Transfer Capacitance Crss 110 pF f = 1 MHz Turn-On Delay Time td(on) 15 ns ID = 10 A Rise Time tr 120 ns VGS(on) = 10 V Turn-Off Delay Time td(off) 70 ns VDD = 30 V Fall Time tf 50 ns RG = 10 Ω Total Gate Charge QG 27 nC ID = 20 A Gate to Source Charge QGS 2.7 nC VDD = 48 V Gate to Drain Charge QGD 8.9 nC VGS = 10 V Body Diode Forward Voltage VF(S-D) 1.2 V IF = 20 A, VGS = 0 Reverse Recovery Time trr 120 ns IF = 20 A, VGS = 0 Reverse Recovery Charge Qrr 350 nC di/dt = 100 A/µs Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time D.U.T. D.U.T. RG = 25 Ω PG RL L 50 Ω RG RG = 10 Ω PG. VDD VDD VGS VGS Wave 010 % Form IAS ID ID Wave Form VGS 0 BVDSS VDS VDD t t = 1µs Duty Cycle ≤ 1 % 90 % 90 % ID VGS = 20 → 0 V VGS (on) 90 % ID 10 % 0 10 % td (on) tr ton td (off) tf toff Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2412 TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 50 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 20 40 60 80 100 120 140 40 30 20 10 0 160 20 40 60 80 100 120 Tc - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 Pulsed 10 µs m s s ss m Di VGS = 6 V VGS = 10 V 60 40 VGS = 4 V 20 m s Li m n 0 io 20 DC at ip d ite 1 0.1 µs 0 1 er 10 w Tc = 25 ˚C Single Pulse ID - Drain Current - A = 10 Po ID - Drain Current - A PW d ite ) m 0 VID (DC) i L 1 n) (o S = DS VG R t (a 10 160 80 ID (pulse) 1 140 Tc - Case Temperature - ˚C 10 100 VDS - Drain to Source Voltage - V 0 2 4 6 8 10 12 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed ID - Drain Current - A VDS = 10 V 100 TA = –25 ˚C 25 ˚C 125 ˚C 10 1 0 1 2 3 4 5 6 7 8 VGS - Gate to Source Voltage - V 3 2SK2412 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth (t) - Transient Thermal Resistance - ˚C/w 1000 100 Rth (ch-a) = 62.5 ˚C/W 10 Rth (ch-c) = 4.17 ˚C/W 1 0.1 0.01 10 µ Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1000 100 VDS = 10 V Pulsed TA = –25 25 75 125 ˚C ˚C ˚C ˚C 10 1 RDS (on) - Drain to Source On-State Resistance - mΩ 0 1 10 120 Pulsed 100 80 60 ID = 10 A 40 20 0 0 5 10 15 20 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 120 Pulsed 100 80 VGS = 4 V 60 VGS = 10 V 40 20 0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID - Drain Current - A 1 10 ID - Drain Current - A 4 100 100 VGS (off) - Gate to Source Cutoff Voltage - V |yfs| - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS (on) - Drain to Source On-State Resistance - mΩ PW - Pulse Width - s 2.0 VDS = 10 V ID = 1 mA 1.5 1.0 0.5 0 –50 –25 0 25 50 75 100 Tch - Channel Temperature - ˚C 125 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 140 100 ISD - Diode Forward Current - A 120 100 VGS = 4 V 80 60 VGS = 10 V 40 20 Pulsed 10 10 V VGS = 0 1 ID = 10 A 0.1 0 –50 –25 0 25 50 75 100 125 150 1.0 0 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss Coss Crss 100 10 10 1 1000 td (on), tr, td (off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS VGS = 0 f = 1 MHz 1000 tr td (off) 100 tf td (on) 10 VDD = 30 V VGS = 10 V RG = 10 Ω 1.0 100 0.1 1.0 VDS - Drain to Source Voltage - V 10 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 di/dt = 50 A/µ s VGS = 0 1.0 10 ID - Drain Current - A 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Diode - ns 100 10 0.1 3.0 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C 10000 2.0 ID = 20 A 16 VDD = 48 V 14 70 60 VGS VDS 50 12 10 40 8 30 6 20 4 10 2 VGS - Gate to Source Voltage - V RDS (on) - Drain to Source On-State Resistance - mΩ 2SK2412 0 0 10 20 30 40 Qg - Gate Charge - nC 5 2SK2412 SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 IAS = 20 A EA 10 S = 22 .5 VDD = 30 V VGS = 20 V → 0 1.0 RG = 25 Ω 10 µ 100 µ mJ 1m L - Inductive Load - H 6 dt - Energy Derating Factor - % IAS - Single Avalanche Energy - mJ 100 10 m VDD = 30 V RG = 25 Ω VGS = 20 V → 0 IAS ≤ 20 A 100 80 60 40 20 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C 2SK2412 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 7 2SK2412 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6