NEC 2SJ358

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ358
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
Package Drawings (unit: mm)
The 2SJ358 is a P-channel vertical MOS FET that can
be used as a switching element. The 2SJ358 can be
5.7 ±0.1
1.0
3
0.5 ±0.1
0.5 ±0.1
2.1
• New-type compact package
Has advantages of packages for small signals and for
power transistors, and compensates those disadvantages
2
0.4 ±0.05
0.85 ±0.1
4.2
Equivalent Circuit
Drain (D)
• Can be directly driven by an IC operating at 5 V.
• Low on-resistance
RDS(ON) = 0.40 Ω MAX. @VGS = –4 V, ID = –1.5 A
RDS(ON) = 0.30 Ω MAX. @VGS = –10 V, ID = –1.5 A
Electrode Connection
1. Source
Internal 2. Drain
Diode
3. Gate
Gate (G)
Gate Protect
Diode
QUALITY GRADE
5.4 ±0.25
1
3.65 ±0.1
0.55
switching characteristics, and is suitable for applications
such as actuator driver and DC/DC converter.
FEATURES
1.5 ±0.1
2.0 ±0.2
directly driven by an IC operating at 5 V.
The 2SJ358 features a low on-resistance and excellent
Marking: UA2
Source (S)
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = +25 ˚C)
Parameter
Symbol
Conditions
Ratings
Unit
Drain-Source Voltage
VDSS
VGS = 0
–60
V
Gate-Source Voltage
VGSS
VDS = 0
–20/+10
V
Drain Current (DC)
ID(DC)
–/+3.0
A
–/+6.0
A
2.0
W
Drain Current (Pulse)
ID(pulse)
PW ≤ 10 ms
Duty Cycle ≤ 1 %
Mounted on ceramic board of 7.5 cm2 × 0.7 mm
Total Power Loss
PT
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Document No. TC-2491
(O.D. No. TC-8011)
Date Published October 1994 P
Printed in Japan
©
1994
2SJ358
ELECTRICAL SPECIFICATIONS (Ta = +25 ˚C)
Parameter
Symbol
Drain Shut-down Current
IDSS
Gate Leak Current
IGSS
Gate Cutoff Voltage
Conditions
MIN.
TYP.
MAX.
Unit
–10
µA
–/+10
µA
VDS = –60 V, VGS = 0
VGS = –16/+10 V, VDS = 0
VGS(off)
VDS = –10 V, ID = –1 mA
–1.0
Forward Transfer Admittance
|yfs|
VDS = –10 V, ID = –1.0 A
1.8
Drain-Source On-Resistance
RDS(on)1
VGS = –4 V, ID = –1.5 A
0.29
0.40
Ω
Drain-Source On-Resistance
RDS(on)2
VGS = –10 V, ID = –1.5 A
0.18
0.30
Ω
Ciss
VDS = –10 V, VGS = 0,
600
pF
Output Capacitance
Coss
f = 1.0 MHz
300
pF
Feedback Capacitance
Crss
120
pF
On-Time Delay
td(on)
VDD = –25 V, ID = –1.5 A
6
ns
VGS(on) = –10 V
35
ns
155
ns
95
ns
Input Capacitance
Rise Time
tr
Off-Time Delay
RG = 10 Ω, RL = 17 Ω
td(off)
Fall Time
tf
Gate Input Charge
Gate-Source Chanrge
Gate-Drain Charge
–1.4
–2.0
V
S
QG
VDS = –48 V,
23.9
nC
QGS
VGS = –10 V,
1.5
nC
8.1
nC
95
ns
118
nC
ID = –3.1 A, IG = –2 mA
QGD
Internal Diode Reverse
Recovery Time
trr
Internal Diode Reverse
Recovery Charge
Qrr
IF = 3.0 A
di/dt = 50 A/µs
CHARACTERISTICS CURVES (Ta = +25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
100
–10
80
ID – Drain Current – A
dT – Derating Factor – %
1
–5
60
40
–2
PW
–1
m
s
=
10
0
–0.5
m
s
10
m
s
DS
–0.2
20
–0.1
0
25
50
75
100
125
Ta – Ambient Temperature – ˚C
2
150
–0.05 Single Pulse
–0.5 –1
–2
–5
–10
–20
–50 –100
VDS – Drain to Source Voltage – V
2SJ358
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
TRANSFER CHARACTERISTICS
–10
–10 VDS = –10 V
Pulsed
–1
Pulsed
–6
.5
V
–4
–4.0
ID – Drain Current –A
–1
0V
ID – Drain Current – A
–8
V
–3.5 V
–4
–3.0 V
–2
–2.5 V
Ta = 150 ˚C
–0.1
Ta = –25 ˚C
–0.01
Ta = 0 ˚C
–0.001
Ta = 25 ˚C
–0.0001
VGS = –2.0 V
–1
0
–2
–3
Ta = 75 ˚C
–4
–5
–0.00001
–1
VDS – Drain to Source Voltage – V
0.1
0.01
0.001
–0.0001
Ta = 0 ˚C
Ta = 25 ˚C
Ta = 75 ˚C
Ta = 150 ˚C
–0.001
–0.01
–0.1
–1
RDS(on) – Drain to Source On-State Resistance – Ω
ID – Drain Current – A
0.3
0.2
0.1
0
–0.001
–0.01
Ta = 0 ˚C
Ta = –25 ˚C
–0.1
ID – Drain Current – A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRINT
0.7 VGS = –4 V
Pulsed
0.6
Ta = 150 ˚C Ta = 75 ˚C
0.5
0.4
0.3
0.2
Ta = 25 ˚C
0.1
Ta = 0 ˚C
Ta = –25 ˚C
0
–0.01
–0.01
–0.1
–1
–10
ID – Drain Current – A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.5
VGS = –10 V
Pulsed
Ta = 150 ˚C Ta = 75 ˚C
0.4
Ta = 25 ˚C
RDS(on) – Drain to Source On-State Resistance – Ω
Ta = –25 ˚C
–1
–10
RDS(on) – Drain to Source On-State Resistance – Ω
|yfs| – Forward Transfer Admittence – S
VDS = –10 V
Pulsed
1
–4
–3
VGS – Gate to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
–2
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.6
Pulsed
0.4
ID = 3.0 A
0.2
ID = 1.5 A
0
–2
–4
–6
–8 –10 –12 –14 –16 –18 –20
VGS – Gate to Source Voltage – V
3
2SJ358
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Ciss, Coss, Crss – Capacitance – pF
–1
–0.1
–0.01
–0.001
–0.0001
–0.2
td(on), tr, td(off), tr – Switching Time – ns
10000
VGS = 0
Pulsed
1000
VGS = 0
f = 1 MHz
Ciss
1000
100
Crss
Coss
10
–0.4
–0.6
–0.8
–1.0
–1.2
–10
–1
–100
VSD – Source to Drain Voltage – V
VDS – Drain to Source Voltage – V
SWITCHING CHARACTERISTICS
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
VDD = –25 V
VGS(ON) = –10 V
trr – Reverse Recovery Time – ns
ISD – Diode Forward Current – A
–10
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
td(off)
100
tf
tr
td(on)
10
1
0.1
VGS = 0
di/dt = 50 A/ µs
100
10
–0.05 –0.1
10
ID – Drain Current – A
–0.5
–1
–5
ID – Diode Forward Current – A
rth(j–a) – Transient Thermal Resistance – ˚C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
Single Pulse
Using ceramic board
of 7.5 cm2 × 0.7 mm
10
1
0.1
1m
10 m
100 m
1
PW – Pulse Width – s
4
10
100
–10
2SJ358
RELATED DOCUMENTS
Document Name
Document No.
Semiconductor Device Mounting Technology Manual
IEI-1207
NEC Semiconductor Device Reliability/Quality Control System
TEI-1202
Guide to Quality Assurance for Semiconductor Device
MEI-1202
5
2SJ358
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation
Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment,
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.
Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime
systems, etc.
M4 92.6