DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package Drawings (unit: mm) The 2SJ358 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ358 can be 5.7 ±0.1 1.0 3 0.5 ±0.1 0.5 ±0.1 2.1 • New-type compact package Has advantages of packages for small signals and for power transistors, and compensates those disadvantages 2 0.4 ±0.05 0.85 ±0.1 4.2 Equivalent Circuit Drain (D) • Can be directly driven by an IC operating at 5 V. • Low on-resistance RDS(ON) = 0.40 Ω MAX. @VGS = –4 V, ID = –1.5 A RDS(ON) = 0.30 Ω MAX. @VGS = –10 V, ID = –1.5 A Electrode Connection 1. Source Internal 2. Drain Diode 3. Gate Gate (G) Gate Protect Diode QUALITY GRADE 5.4 ±0.25 1 3.65 ±0.1 0.55 switching characteristics, and is suitable for applications such as actuator driver and DC/DC converter. FEATURES 1.5 ±0.1 2.0 ±0.2 directly driven by an IC operating at 5 V. The 2SJ358 features a low on-resistance and excellent Marking: UA2 Source (S) Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = +25 ˚C) Parameter Symbol Conditions Ratings Unit Drain-Source Voltage VDSS VGS = 0 –60 V Gate-Source Voltage VGSS VDS = 0 –20/+10 V Drain Current (DC) ID(DC) –/+3.0 A –/+6.0 A 2.0 W Drain Current (Pulse) ID(pulse) PW ≤ 10 ms Duty Cycle ≤ 1 % Mounted on ceramic board of 7.5 cm2 × 0.7 mm Total Power Loss PT Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Document No. TC-2491 (O.D. No. TC-8011) Date Published October 1994 P Printed in Japan © 1994 2SJ358 ELECTRICAL SPECIFICATIONS (Ta = +25 ˚C) Parameter Symbol Drain Shut-down Current IDSS Gate Leak Current IGSS Gate Cutoff Voltage Conditions MIN. TYP. MAX. Unit –10 µA –/+10 µA VDS = –60 V, VGS = 0 VGS = –16/+10 V, VDS = 0 VGS(off) VDS = –10 V, ID = –1 mA –1.0 Forward Transfer Admittance |yfs| VDS = –10 V, ID = –1.0 A 1.8 Drain-Source On-Resistance RDS(on)1 VGS = –4 V, ID = –1.5 A 0.29 0.40 Ω Drain-Source On-Resistance RDS(on)2 VGS = –10 V, ID = –1.5 A 0.18 0.30 Ω Ciss VDS = –10 V, VGS = 0, 600 pF Output Capacitance Coss f = 1.0 MHz 300 pF Feedback Capacitance Crss 120 pF On-Time Delay td(on) VDD = –25 V, ID = –1.5 A 6 ns VGS(on) = –10 V 35 ns 155 ns 95 ns Input Capacitance Rise Time tr Off-Time Delay RG = 10 Ω, RL = 17 Ω td(off) Fall Time tf Gate Input Charge Gate-Source Chanrge Gate-Drain Charge –1.4 –2.0 V S QG VDS = –48 V, 23.9 nC QGS VGS = –10 V, 1.5 nC 8.1 nC 95 ns 118 nC ID = –3.1 A, IG = –2 mA QGD Internal Diode Reverse Recovery Time trr Internal Diode Reverse Recovery Charge Qrr IF = 3.0 A di/dt = 50 A/µs CHARACTERISTICS CURVES (Ta = +25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA 100 –10 80 ID – Drain Current – A dT – Derating Factor – % 1 –5 60 40 –2 PW –1 m s = 10 0 –0.5 m s 10 m s DS –0.2 20 –0.1 0 25 50 75 100 125 Ta – Ambient Temperature – ˚C 2 150 –0.05 Single Pulse –0.5 –1 –2 –5 –10 –20 –50 –100 VDS – Drain to Source Voltage – V 2SJ358 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TRANSFER CHARACTERISTICS –10 –10 VDS = –10 V Pulsed –1 Pulsed –6 .5 V –4 –4.0 ID – Drain Current –A –1 0V ID – Drain Current – A –8 V –3.5 V –4 –3.0 V –2 –2.5 V Ta = 150 ˚C –0.1 Ta = –25 ˚C –0.01 Ta = 0 ˚C –0.001 Ta = 25 ˚C –0.0001 VGS = –2.0 V –1 0 –2 –3 Ta = 75 ˚C –4 –5 –0.00001 –1 VDS – Drain to Source Voltage – V 0.1 0.01 0.001 –0.0001 Ta = 0 ˚C Ta = 25 ˚C Ta = 75 ˚C Ta = 150 ˚C –0.001 –0.01 –0.1 –1 RDS(on) – Drain to Source On-State Resistance – Ω ID – Drain Current – A 0.3 0.2 0.1 0 –0.001 –0.01 Ta = 0 ˚C Ta = –25 ˚C –0.1 ID – Drain Current – A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRINT 0.7 VGS = –4 V Pulsed 0.6 Ta = 150 ˚C Ta = 75 ˚C 0.5 0.4 0.3 0.2 Ta = 25 ˚C 0.1 Ta = 0 ˚C Ta = –25 ˚C 0 –0.01 –0.01 –0.1 –1 –10 ID – Drain Current – A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.5 VGS = –10 V Pulsed Ta = 150 ˚C Ta = 75 ˚C 0.4 Ta = 25 ˚C RDS(on) – Drain to Source On-State Resistance – Ω Ta = –25 ˚C –1 –10 RDS(on) – Drain to Source On-State Resistance – Ω |yfs| – Forward Transfer Admittence – S VDS = –10 V Pulsed 1 –4 –3 VGS – Gate to Source Voltage – V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 –2 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0.6 Pulsed 0.4 ID = 3.0 A 0.2 ID = 1.5 A 0 –2 –4 –6 –8 –10 –12 –14 –16 –18 –20 VGS – Gate to Source Voltage – V 3 2SJ358 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Ciss, Coss, Crss – Capacitance – pF –1 –0.1 –0.01 –0.001 –0.0001 –0.2 td(on), tr, td(off), tr – Switching Time – ns 10000 VGS = 0 Pulsed 1000 VGS = 0 f = 1 MHz Ciss 1000 100 Crss Coss 10 –0.4 –0.6 –0.8 –1.0 –1.2 –10 –1 –100 VSD – Source to Drain Voltage – V VDS – Drain to Source Voltage – V SWITCHING CHARACTERISTICS REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 VDD = –25 V VGS(ON) = –10 V trr – Reverse Recovery Time – ns ISD – Diode Forward Current – A –10 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE td(off) 100 tf tr td(on) 10 1 0.1 VGS = 0 di/dt = 50 A/ µs 100 10 –0.05 –0.1 10 ID – Drain Current – A –0.5 –1 –5 ID – Diode Forward Current – A rth(j–a) – Transient Thermal Resistance – ˚C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 100 Single Pulse Using ceramic board of 7.5 cm2 × 0.7 mm 10 1 0.1 1m 10 m 100 m 1 PW – Pulse Width – s 4 10 100 –10 2SJ358 RELATED DOCUMENTS Document Name Document No. Semiconductor Device Mounting Technology Manual IEI-1207 NEC Semiconductor Device Reliability/Quality Control System TEI-1202 Guide to Quality Assurance for Semiconductor Device MEI-1202 5 2SJ358 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6