NEC UPA1707G

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1707
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
DESCRIPTION
This product
is
N-Channel
MOS
Field
Effect
8
Transistor designed for DC/DC converters and power
5
management applications of notebook computers.
1,2,3 ; Source
; Gate
4
5,6,7,8 ; Drain
FEATURES
• Low on-resistance
RDS(on)1 = 10.0 mΩ (TYP.) (VGS = 10 V, ID = 5.0 A)
0.05 MIN.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
4.4
5.37 MAX.
0.8
+0.10
–0.05
• Low Ciss: Ciss = 1400 pF (TYP.)
6.0 ±0.3
4
0.15
1.8 MAX.
RDS(on)3 = 14.0 mΩ (TYP.) (VGS = 4.0 V, ID = 5.0 A)
1.44
1
RDS(on)2 = 12.5 mΩ (TYP.) (VGS = 4.5 V, ID = 5.0 A)
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1707G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±10
A
ID(pulse)
±40
A
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Drain Current (pulse)
Note1
Total Power Dissipation (TA = 25°C)
Note2
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2
2. Mounted on ceramic substrate of 1200 mm x 1.7 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Document No.
G13084EJ1V0DS00 (1st edition)
Date Published January 1999 NS CP(K)
Printed in Japan
©
1998
µ PA1707
ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
Drain to Source On-state Resistance
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
RDS(on)1
VGS = 10 V, ID = 5.0 A
10.0
13.5
mΩ
RDS(on)2
VGS = 4.5 V, ID = 5.0 A
12.5
18
mΩ
RDS(on)3
VGS = 4.0 V, ID = 5.0 A
14.0
21
mΩ
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 5.0 A
5.0
13
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
10
µA
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
µA
Input Capacitance
Ciss
VDS = 10 V
1400
pF
Output Capacitance
Coss
VGS = 0 V
450
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
180
pF
Turn-on Delay Time
td(on)
ID = 5.0 A
20
ns
VGS(on) = 10 V
185
ns
td(off)
VDD = 15 V
65
ns
tf
RG = 10 Ω
40
ns
Total Gate Charge
QG
ID = 10 A
26
nC
Gate to Source Charge
QGS
VDD = 24 V
4.2
nC
Gate to Drain Charge
QGD
VGS = 10 V
6.5
nC
VF(S-D)
IF = 10 A, VGS = 0 V
0.8
V
Reverse Recovery Time
trr
IF = 10 A, VGS = 0 V
30
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/ µs
25
nC
Gate to Source Cut-off Voltage
Rise Time
tr
Turn-off Delay Time
Fall Time
Body Diode Forward Voltage
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
RL
RG
RG = 10 Ω
PG.
VGS
VGS
Wave Form
0
PG.
VDD
I
D
Wave Form
90 %
90 %
τ = 1µ s
Duty Cycle ≤ 1 %
10 %
0 10 %
tr
td(on)
ton
IG = 2 mA
RL
50 Ω
VDD
90 %
ID
τ
2
VGS(on)
10 %
ID
VGS
0
S
td(off)
tf
toff
Data Sheet G13084EJ1V0DS00
µ PA1707
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
2.8
100
80
60
40
20
0
20
40
60
80
Mounted on ceramic
substrate of
1200mm 2 ×1.7mm
2.4
2.0
1.6
1.2
0.8
0.4
0
100 120 140 160
TA - Ambient Temperature - ˚C
20
40
60
80
100 120 140 160
TA - Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
d
ite
im V)
ID(pulse)
10
Note
1m
s
R (V
10
Mounted on ceramicsubstrate of 1200 mm × 1.7 mm
2
m
s
ID(DC)
10
0m
Po
s
we
rD
iss
ipa
tio
1
n
Lim
ite
d
TC = 25 ˚C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
rth(t) - Transient Thermal Resistance - C/W
ID - Drain Current - A
L 0
n)
(o
=1
DS GS
Rth(ch-a) = 62.5˚C/W
100
10
1
0.1
Mounted on ceramic
substrate of
1200 mm 2 to 1.7 mm
Single Pulse
Single Pulse
Channel to Ambient
0.01
0.001
100 µ
1m
10 m
100 m
1
10
100
1000
10 000
PW - Pulse Width - s
Data Sheet G13084EJ1V0DS00
3
µ PA1707
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
Pulsed
ID - Drain Current - A
ID - Drain Current - A
50
10
1
TA = 125˚C
75˚C
25˚C
−25˚C
0.1
0.01
0
30
20
10
VDS = 10 V
3
4
2
1
VGS = 10 V 4.5 V 4 V
40
0
TA = −25˚C
25˚C
75˚C
125˚C
1
VDS =10 V
Pulsed
10
1
100
RDS(on) - Drain to Source On-state Resistance - mΩ
|yfs| - Forward Transfer Admittance - S
100
0.1
0.8
0.6
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
0.4
0.2
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
35
30
25
20
15
ID = 5 A
10
5
5
0
10
15
20
25
VGS - Gate to Source Voltage - V
4
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
30
20
VGS = 4 V
4.5 V
10
0
0.1
10 V
1
10
100
VGS(off) - Gate to Source Cut-off Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
ID- Drain Current - A
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
ID = 1 mA
2.2
1.8
1.4
1.0
0.6
−40
0
40
80
120
Tch - Channel Temperature - ˚C
ID - Drain Current - A
Data Sheet G13084EJ1V0DS00
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Pulsed
ID = 5 A
VGS = 4.0 V
4.5 V
15
10 V
10
5
0
−40
0
40
80
120
100
10
VGS = 4 V
0.1
0
140
1000
Coss
Crss
100
10
30
100
100
10
10
100
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Diode - ns
di/dt = 100A /µs
VGS = 0 V
1
1.2
1.4
100
td(off)
tf
td(on)
10
VDS = 15 V
VGS = 10 V
RG = 10 Ω
1
0.1
1
10
100
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1
0.1
1.0
tr
VDS - Drain to Source Voltage - V
1 000
0.8
1 000
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0 V
f = 1 MHz
1
0.6
SWITCHING CHARACTERISTICS
Ciss
10
0.1
0.4
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Ciss, Coss, Crss - Capacitance - pF
0.2
Tch - Channel Temperature - ˚C
10000
0V
1
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
ID = 10 A
14
12
30
VDD = 24 V
15 V
6V
20
VGS
10
8
6
4
10
2
0
0
4
8
12
16
20
24
28
VGS - Gate to Source Voltage - V
20
IF - Diode Forward Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
µ PA1707
0
32
QG - Gate Charge - nC
ID - Drain Current - A
Data Sheet G13084EJ1V0DS00
5
µ PA1707
[MEMO]
6
Data Sheet G13084EJ1V0DS00
µ PA1707
[MEMO]
Data Sheet G13084EJ1V0DS00
7
µ PA1707
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5