DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1723 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING (Unit : mm) The µPA1723 is N-Channel MOS Field Effect Transistor 8 5 designed for power management switch. 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A) 0.05 MIN. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 4.4 5.37 MAX. 0.8 +0.10 –0.05 • Low Ciss : Ciss = 3800 pF TYP. 6.0 ±0.3 4 0.15 1.8 MAX. RDS(on)3 = 8.7 mΩ MAX. (VGS = 2.5 V, ID = 7.0 A) 1.44 1 RDS(on)2 = 7.4 mΩ MAX. (VGS = 4.0 V, ID = 7.0 A) 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE µPA1723G Power SOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±12 V Drain Current (DC) ID(DC) ±13 A ID(pulse) ±52 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Drain Current (pulse) Note1 Total Power Dissipation (TA = 25°C) Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source 2 2. Mounted on ceramic substrate of 1200 mm x 2.2mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14026EJ1V0DS00 (1st edition) Date Published December 1999 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1998, 1999 µ PA1723 ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance MIN. TYP. MAX. UNIT RDS(on)1 VGS = 4.5 V, ID = 7.0 A 5.4 6.7 mΩ RDS(on)2 VGS = 4.0 V, ID = 7.0 A 5.5 7.4 mΩ RDS(on)3 VGS = 2.5 V, ID = 7.0 A 6.5 8.7 mΩ VGS(off) VDS = 10 V, ID = 1 mA 0.5 0.9 1.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 7.0 A 15.0 32 Drain Leakage Current IDSS VDS = 20 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 3800 pF Output Capacitance Coss VGS = 0 V 1200 pF Reverse Transfer Capacitance Crss f = 1 MHz 700 pF Turn-on Delay Time td(on) ID = 7.0 A 70 ns VGS(on) = 4.5 V 440 ns td(off) VDD = 10 V 230 ns tf RG = 10 Ω 300 ns Total Gate Charge QG ID = 13 A 47.0 nC Gate to Source Charge QGS VDD = 16 V 11.0 nC Gate to Drain Charge QGD VGS = 4.5 V 12.0 nC VF(S-D) IF = 13.0 A, VGS = 0 V 0.75 V Reverse Recovery Time trr IF = 13.0 A, VGS = 0 V 68 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 70 nC Gate to Source Cut-off Voltage ★ TEST CONDITIONS Rise Time tr Turn-off Delay Time Fall Time Body Diode Forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 PG. VDD ID 90 % 90 % 10 % 0 10 % Wave Form τ = 1µ s Duty Cycle ≤ 1 % tr td(on) ton IG = 2 mA RL 50 Ω VDD 90 % ID τ 2 VGS(on) 10 % ID VGS 0 S td(off) tf toff Data Sheet G14026EJ1V0DS00 µ PA1723 ★ TYPICAL CHARACTERISTICS (TA = 25 °C) FORWARD TRANSFER CHARACTERISTICS 100 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed ID - Drain Current - A ID - Drain Current - A Pulsed 50 10 TA = 125˚C 75˚C 25˚C -25˚C 1 40 30 VGS = 4.5 V 20 VGS = 4.0 V VGS = 2.5 V 10 VDS = 10 V 4 3 0.1 1 0 2 0 0.0 10 8 4 VGS = 2.5 V VGS = 4.0 V VGS = 4.5 V 2 0 − 100 − 50 0 50 100 150 Tch - Channel Temperature - ˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 Pulsed 8 VGS = 2.5 V 6 VGS = 4.0 V VGS = 4.5 V 4 2 0 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 6 0.1 0.2 0.4 0.3 VDS - Drain to Source Voltage - V VGS(off) - Gate to Source Cut-off Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 Pulsed ID = 3 A 8 ID = 6 A 6 4 2 0 0 5 10 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA 1.0 0.5 0.2 − 50 0 50 100 150 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet G14026EJ1V0DS00 3 µ PA1723 100 VDS =10 V Pulsed SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1 000 TC = 25˚C TC = 75˚C 10 TC = 125˚C 1 0.1 0.1 Pulsed TC = -25˚C IF - Diode Forward Current - A |yfs| - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1 10 100 VGS = 4.0 V VGS = 0 V 10 1 0.1 0.0 100 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss Coss Crss 1 1.0 1.4 1.2 10 10 000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10 000 100 0.1 0.8 SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHz 1 000 0.6 0.4 VSD - Source to Drain Voltage - V ID- Drain Current - A 100 000 0.2 tr 1 000 tf td(off) 100 10 1 100 td(on) 1 0.1 VDS - Drain to Source Voltage - V 10 VDS = 10 V VGS = 4.5 V RG = 10 Ω 100 ID - Drain Current - A trr - Reverse Recovery Time - ns 1 000 di/dt = 100A/µs VGS = 0 V 100 10 1 0.1 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS 12 30 ID = 10 A 25 10 20 8 VDD = 16 V 10 V 4V 15 VGS 10 4 2 5 VDS 0 0 1 10 100 0 10 20 30 40 QG - Gate Charge - nC ID - Drain Current - A 4 6 Data Sheet G14026EJ1V0DS00 50 60 VGS - Gate to Source Voltage - V Remark 2 Mounted on ceramic substrate of 1200 mm x 2.2 mm µ PA1723 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 2.8 100 80 60 40 20 0 20 40 60 80 2.0 1.6 1.2 0.8 0.4 0 100 120 140 160 Mounted on ceramic substrate of 1200 mm 2 ×2.2 mm 2.4 0 TA - Ambient Temperature - ˚C 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 PW 1 m = s 10 13 A 10 0 µs m s 10 10 0 m s Po we rD iss ipa tio 1 n Lim ite d Remark 2 Mounted on ceramic substrate of 1200 mm x 2.2 mm TA = 25 ˚C 0.1 Single Pulse 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A ID(pulse) = 52 A d ite ) m V Li .5 n) = 4 (o S S RD V G ID(DC) = (@ Rth(ch-A) = 62.5˚C/W 100 10 1 0.1 0.01 0.001 Mounted on ceramic substrate of 1200mm2 × 2.2mm Single Pulse 10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s Data Sheet G14026EJ1V0DS00 5 µ PA1723 [MEMO] 6 Data Sheet G14026EJ1V0DS00 µ PA1723 [MEMO] Data Sheet G14026EJ1V0DS00 7 µ PA1723 • The information in this document is subject to change without notice. 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