DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1731 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING (Unit : mm) The µPA1731 is P-Channel MOS Field Effect Transistor 8 5 designed for power management applications of 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 4.4 0.8 +0.10 –0.05 5.37 MAX. 0.15 RDS(on)3 = 16.5 mΩ TYP. (VGS = –4.0 V, ID = –5.0 A) • Low Ciss : Ciss =2600 pF TYP. 6.0 ±0.3 4 0.05 MIN. • • 1.8 MAX. RDS(on)2 = 14.6 mΩ TYP. (VGS = –4.5 V, ID = –5.0 A) 1.44 1 RDS(on)1 = 10.3 mΩ TYP. (VGS = –10 V, ID = –5.0 A) 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE µPA1731G Power SOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS –30 V Gate to Source Voltage (VDS = 0 V) VGSS # 20 V Drain Current (DC) ID(DC) # 10 A ID(pulse) # 40 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Drain Current (pulse) Note1 Total Power Dissipation (TA = 25°C) Note2 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14285EJ1V0DS00 (1st edition) Date Published October 1999 NS CP(K) Printed in Japan The mark • shows major revised points. © 1999 µPA1731 • ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = –10 V, ID = –5.0 A 10.3 13.0 mΩ RDS(on)2 VGS = –4.5 V, ID = –5.0 A 14.6 19.5 mΩ RDS(on)3 VGS = –4.0 V, ID = –5.0 A 16.5 22.0 mΩ VGS(off) VDS = –10 V, ID = –1 mA –1.0 –1.6 –2.5 V Forward Transfer Admittance | yfs | VDS = –10 V, ID = –5.0 A 8.0 18.0 Drain Leakage Current IDSS VDS = 30 V, VGS = 0 V Gate to Source Leakage Current IGSS VGS = # 20 V, VDS = 0 V Input Capacitance Ciss VDS = –10 V 2600 pF Output Capacitance Coss VGS = 0 V 810 pF Reverse Transfer Capacitance Crss f = 1 MHz 350 pF Turn-on Delay Time td(on) ID = –5.0 A 32 ns VGS(on) = –10 V 185 ns VDD = –15 V 155 ns tf RG = 10 Ω 110 ns Total Gate Charge QG ID = –10 A 46 nC Gate to Source Charge QGS VDD = –24 V 6.5 nC Gate to Drain Charge QGD VGS = –10 V 12 nC Drain to Source On-state Resistance Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time td(off) Fall Time Body Diode Forward Voltage S –1 µA # 10 µA VF(S-D) IF = 10 A, VGS = 0 V 0.80 V Reverse Recovery Time trr IF = 10 A, VGS = 0 V 50 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 46 nC TEST CIRCUIT 2 GATE CHARGE TEST CIRCUIT 1 SWITCHING TIME D.U.T. IG = 2 mA D.U.T. VGS RL VGS PG. RG RG = 10 Ω Wave Form 0 VGS (on) 10 % 90 % PG. VDD 90 % ID 90 % ID VGS 0 I D Wave Form τ τ = 1 µs Duty Cycle ≤ 1 % 2 0 10 % 10 % tr td (on) ton td (off) tf toff Data Sheet G14285EJ1V0DS00 50 Ω RL VDD µPA1731 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 2.8 100 80 60 40 20 0 20 40 60 80 100 120 140 160 −1000 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA Remark Mounted on ceramic substrate of −100 ID(pulse)=40 A 10 Po ms 0m we −1 1200 mm x 2.2 mm s 10 ID(DC)=10 A 2 100 µs 1m −10 Mounted on ceramic substrate of 1200 mm2 x 2.2 mm 2.4 TA - Ambient Temperature - ˚C ID - Drain Current - A s rD iss ipa tion Lim ited −0.1 TA = 25 ˚C Single Pulse −0.01 −0.1 −1 −10 −100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W • Rth(ch-A) = 62.5˚C 100 10 1 0.1 0.01 0.001 Mounted on ceramic substrate of 1200 mm2 x 2.2 mm Single Pulse 10 µ 100µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G14285EJ1V0DS00 3 µPA1731 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS −100 Pulsed TA = −50˚C −25˚C 25˚C 75˚C 125˚C 150˚C −1 −0.1 ID - Drain Current - A ID - Drain Current - A −10 −0.01 −0.001 −0.0001 0 −50 −1.0 VDS = −10 V −3.0 −4.0 −2.0 Pulsed VGS = −10 V −40 −30 −20 −10 1 VDS = −10 V Pulsed −100 −10 RDS(on) - Drain to Source On-state Resistance - mΩ ID- Drain Current - A 4 RDS(on) - Drain to Source On-State Resistance - mΩ TA = −50˚C −25˚C 25˚C 75˚C 125˚C 150˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 20 ID = −10 A −5.0 A 10 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 20 Pulsed 15 VGS = −4.0 V −4.5 V −10 V 10 5 0 −0.1 −1 −10 −100 −15 −10 −5 0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT −100 VGS(off) - Gate to Source Cut-off Voltage - V |yfs| - Forward Transfer Admittance - S 100 −1 −0.8 −0.6 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT −0.1 −0.4 −0.2 0 VGS - Gate to Source Voltage - V 10 −4.5 V −4.0 V −2.0 VDS = −10 V ID = −1 mA −1.5 −1.0 −0.5 0 −50 0 50 100 150 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet G14285EJ1V0DS00 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 25 Pulsed VGS = −4.0 V 20 IF - Diode Forward Current - A −4.5 V 15 −10 V 10 5 ID = −5.0 A 0 −50 0 50 100 VGS = −4.5 V 10 1 0.1 0.01 0.001 0 150 1.5 SWITCHING CHARACTERISTICS −1 0000 1 000 −1 000 Coss Crss −100 VGS = 0 V f = 1 MHz −10 −0.1 −1 −10 tr td(on), tr, td(off), tf - Switching Time - ns Ciss td(off) tf 100 td(on) 10 1 −0.1 −100 −1 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DIODE CURRENT 10000 di/dt = 100 A/µ s VGS = 0 V 1000 100 10 1 −0.1 −1 −10 VDS = −15 V VGS = −10 V RG = 10Ω −10 −100 ID - Drain Current - A −100 VDS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF 1.0 0.5 VF - Source to Drain Voltage - V Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE trr - Reverse Recovery Time - ns 0V DYNAMIC INPUT/OUTPUT CHARACTERISTICS −40 −14 ID = −10 A −12 −30 −20 −10 VGS VDS = −24 V −15 V −6 V −8 −6 −4 −10 −2 VDS 0 10 20 30 40 50 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ µPA1731 0 QG - Gate Charge - nC IF - Diode Current - A Data Sheet G14285EJ1V0DS00 5 µPA1731 [MEMO] 6 Data Sheet G14285EJ1V0DS00 µPA1731 [MEMO] Data Sheet G14285EJ1V0DS00 7 µPA1731 • The information in this document is subject to change without notice. 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