DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1704 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING (Unit : mm) This µPA1704 is N-Channel MOS Field Effect Transistor 8 designed for power management applications and Li-ion 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain battery application. FEATURES • 2.5-V gate drive and low on-resistance 0.05 MIN. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 4.4 0.8 +0.10 –0.05 • Low Ciss : Ciss = 2700 pF TYP. 6.0 ±0.3 4 5.37 MAX. 0.15 1.8 MAX. RDS(on)2 = 16 mΩ MAX. (VGS = 2.5 V, ID = 5.0 A) 1.44 1 RDS(on)1 = 13 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A) 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE µPA1704G Power SOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±12 V Drain Current (DC) ID(DC) ±10 A ID(pulse) ±40 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Drain Current (pulse) Note1 Total Power Dissipation (TA = 25°C) Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source 2. Mounted on ceramic substrate of 1200 mm x 0.7 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D12908EJ1V1DS00 (1st edition) Date Published January 2000 NS CP(K) Printed in Japan © 1998, 1999 µ PA1704 ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 4.0 V, ID = 5.0 A 9.8 13 mΩ RDS(on)2 VGS = 2.5 V, ID = 5.0 A 12 16 mΩ VGS(off) VDS = 10 V, ID = 1 mA 0.5 0.8 1.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 5.0 A 10 25 Drain Leakage Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 2700 pF Output Capacitance Coss VGS = 0 V 880 pF Reverse Transfer Capacitance Crss f = 1 MHz 400 pF Turn-on Delay Time td(on) ID = 5.0 A 25 ns VGS(on) = 4.0 V 95 ns td(off) VDD = 15 V 235 ns tf RG = 10 Ω 200 ns Total Gate Charge QG ID = 10 A 38 nC Gate to Source Charge QGS VDD = 24 V 3.3 nC Gate to Drain Charge QGD VGS = 4.0 V 15 nC VF(S-D) IF = 10 A, VGS = 0 V 0.8 V Reverse Recovery Time trr IF = 10 A, VGS = 0 V 48 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 53 nC Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time Fall Time Body Diode Forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG PG. VGS VGS Wave Form 0 10 % ID PG. 90 % 90 % 10 % 0 10 % Wave Form τ = 1 µs Duty Cycle ≤ 1 % tr td(off) td(on) ton IG = 2 mA RL 50 Ω VDD 90 % ID τ 2 VGS(on) VDD ID VGS 0 S tf toff Data Sheet D12908EJ1V1DS00 µ PA1704 TYPICAL CHARACTERISTICS (TA = 25 °C) TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 Rth(ch-A) = 62.5˚C/W 100 10 1 0.1 0.01 0.001 Mounted on ceramic substrate of 1200 mm2 × 0.7 mm Single Pulse 10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000 100 VDS =10 V Pulsed 10 TA = 25˚C 1 0.1 10 1 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID- Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 30 20 VGS = 2.5 V 10 VGS = 4.0 V 0 1 10 100 VGS(off) - Gate to Source Cut-off Voltage - V |yfs| - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 20 ID = 5.0 A 10 0 4 2 6 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA 1.0 0.5 0 ID - Drain Current - A − 50 0 50 100 150 Tch - Channel Temperature - ˚C Data Sheet D12908EJ1V1DS00 3 µ PA1704 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 2.8 100 80 60 40 20 0 20 40 60 80 Mounted on ceramic substrate of 1200 mm 2 × 0.7 mm 2.4 2.0 1.6 1.2 0.8 0.4 0 100 120 140 160 20 TA - Ambient Temperature - ˚C 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 d ite ) Lim .0 V 4 = S ID(pulse) = 40 A PW ) n (o DS ID - Drain Current - A R 10 (V G 10 ID(DC) = 10 A = Remark 2 Mounted on ceramic substrate of 1200 mm x 0.7 mm 1 m s m s 10 0 Po m s we rD iss ipa tio n 1 Lim ite d TA = 25 ˚C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 Pulsed Pulsed 40 ID - Drain Current - A ID - Drain Current - A 50 VGS = 4.0 V 30 VGS = 2.5 V 20 10 0 10 1 TA = 125˚C 75˚C 25˚C -25˚C 0.1 0.2 0.4 0.6 0.8 0 VDS - Drain to Source Voltage - V 4 1 2 VDS = 10 V 3 4 VGS - Gate to Source Voltage - V Data Sheet D12908EJ1V1DS00 RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1704 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed IF - Diode Forward Current - A 20 VGS = 2.5 V 10 VGS = 4.0 V 1 0.1 ID = 5.0 A − 50 0 50 100 150 0 VGS = 0 V f = 1 MHz 1 000 Coss Crss 100 1 10 30 1 000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS Ciss 10 0.1 100 tf tr td(off) 100 td(on) 10 1 0.1 ID - Drain Current - A di/dt = 100A/µs VGS = 0 V 100 10 1 10 100 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 VDS = 15 V VGS = 4.0 V RG = 10 Ω 10 100 1 VDS - Drain to Source Voltage - V 1 000 1.5 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 1.0 0.5 Tch - Channel Temperature - ˚C trr - Reverse Recovery Time - ns 0V 2.5 V 10 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 10 A 6 30 5 VGS VDD = 24 V 15 V 6V 20 4 3 10 2 1 VDS 0 ID - Drain Current - A 5 10 15 20 25 30 35 VGS - Gate to Source Voltage - V 0 VGS = 4.0 V 100 0 40 QG - Gate Charge - nC Data Sheet D12908EJ1V1DS00 5 µ PA1704 [MEMO] 6 Data Sheet D12908EJ1V1DS00 µ PA1704 [MEMO] Data Sheet D12908EJ1V1DS00 7 µ PA1704 • The information in this document is subject to change without notice. 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