NEC 2SJ493

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ493
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
PART NUMBER
PACKAGE
2SJ493
Isolated TO-220
designed for high current switching applications.
FEATURES
• Super low on-state resistance
RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –8 A)
RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –8 A)
• Low Ciss: Ciss = 1210 pF (TYP.)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
# 20
V
VGSS(DC)
–20, 0
V
ID(DC)
# 16
A
ID(pulse)
# 64
A
Total Power Dissipation (TC = 25°C)
PT
30
W
Total Power Dissipation (TA = 25°C)
PT
2.0
W
Channel Temperature
Tch
150
°C
Gate to Source Voltage (VDS = 0 V)
Note1
Drain Current (DC)
Drain Current (pulse)
Note2
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note3
IAS
–16
A
Single Avalanche Energy
Note3
EAS
25.6
mJ
Notes 1. f = 20 kHz, Duty Cycle ≤ 10% (+Side)
2. PW ≤ 10 µs, Duty Cycle ≤ 1 %
3. Starting Tch = 25 °C, RA = 25 Ω, VGS = –20 V → 0
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
4.17
°C/W
Channel to Ambient
Rth(ch-A)
62.5
°C/W
The information in this document is subject to change without notice.
Document No.
D11265EJ3V0DS00 (3rd edition)
Date Published January 1999 NS CP(K)
Printed in Japan
©
1999
2SJ493
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
Drain to Source On-state Resistance
Gate to Source Cut-off Voltage
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
RDS(on)1
VGS = –10 V, ID = –8 A
70
100
mΩ
RDS(on)2
VGS = –4 V, ID = –8 A
120
185
mΩ
VGS(off)
VDS = –10 V, ID = –1 mA
–1.0
–1.5
–2.0
V
5.0
11
Forward Transfer Admittance
| yfs |
VDS = –10 V, ID = –8 A
Drain Leakage Current
IDSS
VDS = –60 V, VGS = 0 V
–10
µA
Gate to Source Leakage Current
IGSS
VGS = # 20 V, VDS = 0 V
# 10
µA
Input Capacitance
Ciss
VDS = –10 V
1210
pF
Output Capacitance
Coss
VGS = 0 V
520
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
180
pF
Turn-on Delay Time
td(on)
ID = –8 A
15
ns
VGS(on) = –10 V
130
ns
VDD = –30 V
95
ns
tf
RG = 10 Ω
80
ns
Total Gate Charge
QG
ID = –16 A
42
nC
Gate to Source Charge
QGS
VDD = –48 V
8.0
nC
Gate to Drain Charge
QGD
VGS = –10 V
10
nC
VF(S-D)
IF = 16 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 16 A, VGS = 0 V
120
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A / µs
230
nC
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
Body Diode Forward Voltage
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
D.U.T.
RG = 25 Ω
PG
L
50 Ω
VDD
VGS = –20 → 0 V
RL
RG
RG = 10 Ω
PG.
ID
BVDSS
VDS
Starting Tch
0
τ = 1µ s
Duty Cycle ≤ 1 %
D.U.T.
IG = 2 mA
RL
50 Ω
VDD
VGS(on)
10 %
90 %
VDD
ID
Wave Form
TEST CIRCUIT 3 GATE CHARGE
2
Wave Form
90 %
90 %
ID
VGS
0
τ
VDD
PG.
VGS
VGS
ID
IAS
S
Data Sheet D11265EJ3V0DS00
10 %
0 10 %
tr
td(on)
ton
td(off)
tf
toff
2SJ493
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
35
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
20
40
60
80
30
25
20
15
10
5
0
100 120 140 160
20
40
60
80
100 120 140 160
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−1000
Pulsed
Pw
=
10
ID(pulse)
µs
10
0µ
s
1
m
s
−100
d
ite V)
Lim 10
=
o
S
S(
ID(DC) 10
RD t VG
a
( Po
m
s
we
−10
rD
10
iss
ipa D 0
tio C ms
nL
im
TC = 25˚C
ite
Single Pulse
d
−1
−0.1
−1
−10
n)
ID - Drain Current - A
ID - Drain Current - A
−100
VGS = −10 V
−80
−60
−40
−4 V
−20
−100
0
−4
−8
−12
−16
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
−1000
−100
Pulsed
Tch = −25˚C
25˚C
125˚C
−10
−1
0
−5
−10
VDS = −10 V
−20
−15
VGS - Gate to Source Voltage - V
Data Sheet D11265EJ3V0DS00
3
2SJ493
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - ˚C/W
1000
100
Rth(ch-a)= 62.5 ˚C/W
10
Rth(ch-c)= 4.17 ˚C/W
1
0.1
0.01
Single Pulse
0.001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
100
10
VDS = −10 V
Pulsed
Tch = −25˚C
25˚C
75˚C
125˚C
1
0.1
−0.1
−10
−1.0
−100
0.2
ID = −10 A
0.1
−10
−15
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
Pulsed
VGS = −4 V
0.10
VGS = −10 V
0.05
−1
−10
−100
VDS = −10 V
ID = −1 mA
−2.0
−1.5
−1.0
−0.5
0
ID - Drain Current - A
4
−5
0
VGS - Gate to Source Voltage - V
0.15
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.3
Pulsed
ID - Drain Current - A
VGS(off) - Gate to Source Cutoff Voltage - V
RDS(on) - Drain to Source On-State Resistance - Ω
| yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-State Resistance - Ω
PW - Pulse Width - s
−50
0
50
100
150
Tch - Channel Temperature - ˚C
Data Sheet D11265EJ3V0DS00
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
0.24
VGS = −4 V
ISD - Diode Forward Current - A
0.18
−10 V
0.12
0.06
0
−100
VGS = −4 V
VGS = 0
−10
−1
−0.1
ID = −10 A
−50
0
50
100
0
150
Ciss
Coss
Crss
100
10
−0.1
−1
−10
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS
1000
VGS = 0
f = 1 MHz
1000
−100
td(off)
100
tf
tr
10
td(on)
1.0
−0.1
−1
VDS - Drain to Source Voltage - V
10
−1
−10
−100
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
di/dt = 50 A /µ s
VGS = 0
100
1
−0.1
−10
VDD = −30 V
VGS = −10 V
RG = 10 Ω
−100
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
3
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
2
1
Tch - Channel Temperature - ˚C
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−80
VGS
ID = −16 A
−14
−60
−12
VDD = −48 V
−24 V
−12 V
−10
−8
−40
−6
−4
−20
−2
VDS
0
20
40
60
80
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-State Resistance - Ω
2SJ493
0
QG - Gate Charge - nC
IF - Diode Current - A
Data Sheet D11265EJ3V0DS00
5
2SJ493
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
160
ID = –16 A
–10
EAS
=2
5.6
mJ
–1.0
VDD = –30 V
VGS = –20 V → 0
–0.1 RG = 25 Ω
10 µ
100 µ
VDD = –30 V
RG = 25 Ω
VGS = –20 V → 0
IAS <
= –16 A
140
120
100
80
60
40
20
1m
L - Inductive Load - H
6
Energy Derating Factor - %
IAS - Single Avalanche Current - A
–100
10 m
0
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - ˚C
Data Sheet D11265EJ3V0DS00
2SJ493
PACKAGE DRAWING (Unit: mm)
Isolated TO-220(MP-45F)
10.0 ± 0.3
EQUIVALENT CIRCUIT
φ 3.2 ± 0.2
4.5 ± 0.2
Drain
2.7 ± 0.2
Body
Diode
12.0 ± 0.2
Gate
Protection
Diode
Source
13.5MIN.
4 ± 0.2
3 ± 0.1
15.0 ± 0.3
Gate
1.3 ± 0.2
2.5 ± 0.1
0.65 ± 0.1
1.5 ± 0.2
2.54
0.7 ± 0.1
2.54
1.Gate
2.Drain
3.Source
1 2 3
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Data Sheet D11265EJ3V0DS00
7
2SJ493
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"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
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device before using it in a particular application.
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M4 96. 5