DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ493 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is P-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SJ493 Isolated TO-220 designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –8 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –8 A) • Low Ciss: Ciss = 1210 pF (TYP.) • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS –60 V Gate to Source Voltage (VDS = 0 V) VGSS(AC) # 20 V VGSS(DC) –20, 0 V ID(DC) # 16 A ID(pulse) # 64 A Total Power Dissipation (TC = 25°C) PT 30 W Total Power Dissipation (TA = 25°C) PT 2.0 W Channel Temperature Tch 150 °C Gate to Source Voltage (VDS = 0 V) Note1 Drain Current (DC) Drain Current (pulse) Note2 Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note3 IAS –16 A Single Avalanche Energy Note3 EAS 25.6 mJ Notes 1. f = 20 kHz, Duty Cycle ≤ 10% (+Side) 2. PW ≤ 10 µs, Duty Cycle ≤ 1 % 3. Starting Tch = 25 °C, RA = 25 Ω, VGS = –20 V → 0 THERMAL RESISTANCE Channel to Case Rth(ch-C) 4.17 °C/W Channel to Ambient Rth(ch-A) 62.5 °C/W The information in this document is subject to change without notice. Document No. D11265EJ3V0DS00 (3rd edition) Date Published January 1999 NS CP(K) Printed in Japan © 1999 2SJ493 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance Gate to Source Cut-off Voltage TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = –10 V, ID = –8 A 70 100 mΩ RDS(on)2 VGS = –4 V, ID = –8 A 120 185 mΩ VGS(off) VDS = –10 V, ID = –1 mA –1.0 –1.5 –2.0 V 5.0 11 Forward Transfer Admittance | yfs | VDS = –10 V, ID = –8 A Drain Leakage Current IDSS VDS = –60 V, VGS = 0 V –10 µA Gate to Source Leakage Current IGSS VGS = # 20 V, VDS = 0 V # 10 µA Input Capacitance Ciss VDS = –10 V 1210 pF Output Capacitance Coss VGS = 0 V 520 pF Reverse Transfer Capacitance Crss f = 1 MHz 180 pF Turn-on Delay Time td(on) ID = –8 A 15 ns VGS(on) = –10 V 130 ns VDD = –30 V 95 ns tf RG = 10 Ω 80 ns Total Gate Charge QG ID = –16 A 42 nC Gate to Source Charge QGS VDD = –48 V 8.0 nC Gate to Drain Charge QGD VGS = –10 V 10 nC VF(S-D) IF = 16 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 16 A, VGS = 0 V 120 ns Reverse Recovery Charge Qrr di/dt = 50 A / µs 230 nC Rise Time tr Turn-off Delay Time td(off) Fall Time Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. D.U.T. RG = 25 Ω PG L 50 Ω VDD VGS = –20 → 0 V RL RG RG = 10 Ω PG. ID BVDSS VDS Starting Tch 0 τ = 1µ s Duty Cycle ≤ 1 % D.U.T. IG = 2 mA RL 50 Ω VDD VGS(on) 10 % 90 % VDD ID Wave Form TEST CIRCUIT 3 GATE CHARGE 2 Wave Form 90 % 90 % ID VGS 0 τ VDD PG. VGS VGS ID IAS S Data Sheet D11265EJ3V0DS00 10 % 0 10 % tr td(on) ton td(off) tf toff 2SJ493 TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 35 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 20 40 60 80 30 25 20 15 10 5 0 100 120 140 160 20 40 60 80 100 120 140 160 TC - Case Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE −1000 Pulsed Pw = 10 ID(pulse) µs 10 0µ s 1 m s −100 d ite V) Lim 10 = o S S( ID(DC) 10 RD t VG a ( Po m s we −10 rD 10 iss ipa D 0 tio C ms nL im TC = 25˚C ite Single Pulse d −1 −0.1 −1 −10 n) ID - Drain Current - A ID - Drain Current - A −100 VGS = −10 V −80 −60 −40 −4 V −20 −100 0 −4 −8 −12 −16 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A −1000 −100 Pulsed Tch = −25˚C 25˚C 125˚C −10 −1 0 −5 −10 VDS = −10 V −20 −15 VGS - Gate to Source Voltage - V Data Sheet D11265EJ3V0DS00 3 2SJ493 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1000 100 Rth(ch-a)= 62.5 ˚C/W 10 Rth(ch-c)= 4.17 ˚C/W 1 0.1 0.01 Single Pulse 0.001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 100 10 VDS = −10 V Pulsed Tch = −25˚C 25˚C 75˚C 125˚C 1 0.1 −0.1 −10 −1.0 −100 0.2 ID = −10 A 0.1 −10 −15 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed VGS = −4 V 0.10 VGS = −10 V 0.05 −1 −10 −100 VDS = −10 V ID = −1 mA −2.0 −1.5 −1.0 −0.5 0 ID - Drain Current - A 4 −5 0 VGS - Gate to Source Voltage - V 0.15 0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0.3 Pulsed ID - Drain Current - A VGS(off) - Gate to Source Cutoff Voltage - V RDS(on) - Drain to Source On-State Resistance - Ω | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - Ω PW - Pulse Width - s −50 0 50 100 150 Tch - Channel Temperature - ˚C Data Sheet D11265EJ3V0DS00 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 0.24 VGS = −4 V ISD - Diode Forward Current - A 0.18 −10 V 0.12 0.06 0 −100 VGS = −4 V VGS = 0 −10 −1 −0.1 ID = −10 A −50 0 50 100 0 150 Ciss Coss Crss 100 10 −0.1 −1 −10 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS 1000 VGS = 0 f = 1 MHz 1000 −100 td(off) 100 tf tr 10 td(on) 1.0 −0.1 −1 VDS - Drain to Source Voltage - V 10 −1 −10 −100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 50 A /µ s VGS = 0 100 1 −0.1 −10 VDD = −30 V VGS = −10 V RG = 10 Ω −100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 3 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 2 1 Tch - Channel Temperature - ˚C DYNAMIC INPUT/OUTPUT CHARACTERISTICS −80 VGS ID = −16 A −14 −60 −12 VDD = −48 V −24 V −12 V −10 −8 −40 −6 −4 −20 −2 VDS 0 20 40 60 80 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - Ω 2SJ493 0 QG - Gate Charge - nC IF - Diode Current - A Data Sheet D11265EJ3V0DS00 5 2SJ493 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 160 ID = –16 A –10 EAS =2 5.6 mJ –1.0 VDD = –30 V VGS = –20 V → 0 –0.1 RG = 25 Ω 10 µ 100 µ VDD = –30 V RG = 25 Ω VGS = –20 V → 0 IAS < = –16 A 140 120 100 80 60 40 20 1m L - Inductive Load - H 6 Energy Derating Factor - % IAS - Single Avalanche Current - A –100 10 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C Data Sheet D11265EJ3V0DS00 2SJ493 PACKAGE DRAWING (Unit: mm) Isolated TO-220(MP-45F) 10.0 ± 0.3 EQUIVALENT CIRCUIT φ 3.2 ± 0.2 4.5 ± 0.2 Drain 2.7 ± 0.2 Body Diode 12.0 ± 0.2 Gate Protection Diode Source 13.5MIN. 4 ± 0.2 3 ± 0.1 15.0 ± 0.3 Gate 1.3 ± 0.2 2.5 ± 0.1 0.65 ± 0.1 1.5 ± 0.2 2.54 0.7 ± 0.1 2.54 1.Gate 2.Drain 3.Source 1 2 3 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D11265EJ3V0DS00 7 2SJ493 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5