PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2711GR SWITCHING P-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) DESCRIPTION The µPA2711GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES PART NUMBER PACKAGE µPA2711GR Power SOP8 4.4 5.37 MAX. 0.15 0.05 MIN. ORDERING INFORMATION 6.0 ±0.3 4 0.8 +0.10 –0.05 1.44 1 1.8 MAX. • Low on-state resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = –10 V, ID = –6.5 A) RDS(on)2 = 17.2 mΩ MAX. (VGS = –4.5 V, ID = –6.5 A) RDS(on)3 = 22.2 mΩ MAX. (VGS = –4.0 V, ID = –6.5 A) • Low Ciss: Ciss = 2530 pF TYP. • Small and surface mount package (Power SOP8) 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS –30 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V ID(DC) m13 A ID(pulse) m52 A PT 2 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C IAS T.B.D. A EAS T.B.D. mJ Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Note2 Total Power Dissipation (TA = 25°C) Single Avalanche Current Note3 Single Avalanche Energy Note3 Note1 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Notes 1. 2. 3. 4. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec PW ≤ 10 µs, Duty Cycle ≤ 1% Starting Tch = 25°C, VDD = –15 V, RG = 25 Ω, L = 100 µH, VGS = –20 → 0 V T.B.D. (To be determined.) Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. The information contained in this document is being issued in advance of the production cycle for the device. The parameters for the device may change before final production or NEC Corporation, at its own discretion, may withdraw the device prior to its production. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15979EJ1V0PM00 (1st edition) Date Published January 2002 NS CP(K) Printed in Japan © 2002 µPA2711GR ELECTRICAL CHARACTERISTICS (TA = 25°C, Unless otherwise noted, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = –30 V, VGS = 0 V –1 µA Gate Leakage Current IGSS VGS = m20 V, VDS = 0 V m100 nA –2.5 V Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance VGS(off) VDS = –10 V, ID = –1 mA –1.0 –1.6 | yfs | VDS = –10 V, ID = –6.5 A RDS(on)1 VGS = –10 V, ID = –6.5 A 7.5 9.0 mΩ RDS(on)2 VGS = –4.5 V, ID = –6.5 A 12.8 17.2 mΩ RDS(on)3 22.2 mΩ T.B.D. T.B.D. S VGS = –4.0 V, ID = –6.5 A 16.6 Input Capacitance Ciss VDS = –10 V 2530 pF Output Capacitance Coss VGS = 0 V 710 pF Reverse Transfer Capacitance Crss f = 1 MHz 470 pF Turn-on Delay Time td(on) VDD = –15 V, ID = –6.5 A T.B.D. ns VGS = –10 V T.B.D. ns RG = 10 Ω T.B.D. ns T.B.D. ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = –24 V T.B.D. nC Gate to Source Charge QGS VGS = –10 V T.B.D. nC Gate to Drain Charge QGD ID = 13 A T.B.D. nC VF(S-D) IF = 13 A, VGS = 0 V T.B.D. V Reverse Recovery Time trr IF = 13 A, VGS = 0 V T.B.D. ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs T.B.D. nC Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = −20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS(−) RL VDD Wave Form RG PG. VGS 0 VGS 10% 90% VDD VDS(−) 90% BVDSS IAS VDS τ VDS ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE 2 10% 0 10% Wave Form VDD PG. 90% VDS VGS(−) 0 D.U.T. IG = −2 mA RL 50 Ω VDD Preliminary Product Information G15979EJ1V0PM td(on) tr ton td(off) tf toff µPA2711GR [MEMO] Preliminary Product Information G15979EJ1V0PM 3 µPA2711GR • The information contained in this document is being issued in advance of the production cycle for the device. The parameters for the device may change before final production or NEC Corporation, at its own discretion, may withdraw the device prior to its production. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M5 98. 8