DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1873 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit : mm) DESCRIPTION The µPA1873 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 5 1 2, 3 4 5 6, 7 8 FEATURES µPA1873GR-9JG Power TSSOP8 0.25 0.1±0.05 1 4 0.65 0.27 +0.03 –0.08 0.5 0.6 +0.15 –0.1 6.4 ±0.2 4.4 ±0.1 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 ORDERING INFORMATION PACKAGE 1.2 MAX. 1.0±0.05 3° +5° –3° • 2.5 V drive available • Low on-state resistance RDS(on)1 = 23.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 24.0 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 28.0 mΩ MAX. (VGS = 3.1 V, ID = 3.0 A) RDS(on)4 = 29.0 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A) • Built-in G-S protection diode against ESD PART NUMBER : Drain1 : Source1 : Gate1 : Gate2 : Source2 : Drain2 1.0 ±0.2 0.1 0.8 MAX. 0.10 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±12 V Drain Current (DC) (TA = 25°C) ID(DC) ±6.0 A ID(pulse) ±80 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation (2 unit) Note2 EQUIVALENT CIRCUIT Drain1 Gate1 Drain2 Body Diode Gate Protection Diode Source1 Body Diode Gate2 Gate Protection Diode Source2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15629EJ1V0DS00 (1st edition) Date Published December 2001 NS CP(K) Printed in Japan © 2001 µ PA1873 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1.0 mA 0.5 1.5 V | yfs | VDS = 10 V, ID = 3.0 A 5.0 RDS(on)1 VGS = 4.5 V, ID = 3.0 A 13.0 18.0 23.0 mΩ RDS(on)2 VGS = 4.0 V, ID = 3.0 A 14.0 19.0 24.0 mΩ RDS(on)3 VGS = 3.1 V, ID = 3.0 A 14.5 21.5 28.0 mΩ RDS(on)4 VGS = 2.5 V, ID = 3.0 A 15.0 24.5 29.0 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance 1.0 S Input Capacitance Ciss VDS = 10 V 705 pF Output Capacitance Coss VGS = 0 V 205 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 145 pF Turn-on Delay Time td(on) VDD = 10 V, ID = 3.0 A 60 ns tr VGS = 4.0 V 310 ns td(off) RG = 10 Ω 380 ns 420 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 16 V 9.0 nC Gate to Source Charge QGS VGS = 4.0 V 2.0 nC Gate to Drain Charge QGD ID = 6.0 A 4.0 nC VF(S-D) IF = 6.0 A, VGS = 0 V 0.84 V Reverse Recovery Time trr IF = 6.0 A, VGS = 0 V 480 ns Reverse Recovery Charge Qrr di/dt = 50 A / µs 1200 nC Body Diode Forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton RL 50 Ω VDD 90% VDS VGS 0 IG = 2 mA td(off) tf toff Data Sheet G15629EJ1V0DS µ PA1873 TYPICAL CHARACTERISTICS (TA = 25°C) FORWARD BIAS SAFE OPERATING AREA 100 1000 80 100 ID - Drain Current - A dT - Derating Factor - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 60 40 20 0 ID (DC) 10 30 60 120 90 TA - Ambient Temperature - ˚C 0 DC 0.01 0.1 150 ID - Drain Current - A ID - Drain Current - A 4.0 V 10 3.1 V 2.5 V Pulsed VDS = 10 V 0.4 TA = 125˚C 1 TA = 25˚C 0.1 75˚C 0.01 −25˚C 0.001 0.0001 0.00001 0.2 0.6 0.8 1.0 0 0.5 100.00 | yfs | - Forward Transfer Admittance - S 1.5 VDS = 10 V ID = 1mA 1.0 100 1.5 2 2.5 FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 50 1 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V 0 100 100 VGS = 4.5 V 15 10 1 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS Pulsed 5 VGS(off) - Gate Cut-off Voltage - V s Single Pulse PD (FET1) : PD (FET2) = 1:1 20 0.5 −50 =1 0µ 10 ms 100 ms 1 10 0 0 1m s PW 100 µs 0.1 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25 ID (pulse) ited Lim ) (on) RDS = 4.5 V S G (V 150 VDS = 10 V Pulsed 10.00 TA = −25˚C 1.00 25˚C 75˚C 125˚C 0.10 0.01 0.01 0.1 1 10 100 ID - Drain Current - A Tch - Channel Temperature - ˚C Data Sheet G15629EJ1V0DS 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 Pulsed VGS = 2.5 V TA = 125˚C 75˚C 30 25˚C −25˚C 20 10 0.01 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1873 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 Pulsed VGS = 3.1 V TA = 125˚C 30 75˚C 25˚C 20 −25˚C 10 0.01 0.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 Pulsed VGS = 4.0 V 30 TA = 125˚C 75˚C 20 25˚C −25˚C 10 0.01 0.1 1 10 100 VGS = 2.5 V 3.1 V 30 4.0 V 4.5 V 20 10 50 100 150 RDS (on) - Drain to Source On-state Resistance - mΩ RDS (on) - Drain to Source On-state Resistance - mΩ Pulsed ID = 3 A 0 40 Pulsed VGS = 4.5 V 30 TA = 125˚C 75˚C 20 25˚C −25˚C 10 0.01 0.1 1 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 Pulsed ID = 3.0 A 50 40 30 20 10 0 0 2 4 6 8 10 VGS - Gate to Source Voltage - V Tch - Channel Temperature - ˚C 4 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE −50 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A 40 1 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A Data Sheet G15629EJ1V0DS 12 µ PA1873 SWITCHING CHARACTERISTICS CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 td(on), tr, td(off), tf - Switching Time - ns VGS = 0 V f = 1 MHz 1000 Ciss Coss Crss 100 10 0.1 1 10 td (off) tf tr 100 td (on) 10 0.1 100 VDD = 10 V VGS = 4.0 V RG = 10 Ω ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE DYNAMIC INPUT/OUTPUT CHARACTERISTICS 5 Pulsed VGS = 0 V VGS - Gate to Source Voltage - V 100 10 1 0.1 0.01 0.4 0.6 0.8 10 1 VDS - Drain to Source Voltage - V IF - Diode Forward Current - A 1.0 VDD = 16 V 4 10 V 3 2 1 0 1.2 ID = 6.0 A 0 4 8 QG - Gate Charge - nC VF(S-D) - Source to Drain Voltage - V 12 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - ˚C/W Ciss, Coss, Crss - Capacitance - pF 10000 Single Pulse PD (FET1) : PD (FET2) = 1:1 Mounted on FR-4 board of 25 cm2 x 1.6 mm 125˚C/W 100 Mounted on ceramic board of 50 cm2 x 1.1 mm 62.5˚C/W 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s Data Sheet G15629EJ1V0DS 5 µ PA1873 [MEMO] 6 Data Sheet G15629EJ1V0DS µ PA1873 [MEMO] Data Sheet G15629EJ1V0DS 7 µ PA1873 • The information in this document is current as of December, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4