DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2450 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 FEATURES • 2.5 V drive avaliable • Low on-state resistance RDS(on)1 = 17.5 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)2 = 18.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) RDS(on)3 = 22.0 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A) RDS(on)4 = 27.5 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A) • Built-in G-S protection diode against ESD 0.145±0.05 5.0±0.1 0.8 MAX. 4.4±0.1 0.05 +0 −0.05 7 (0.9) ORDERING INFORMATION PACKAGE µ PA2450TL 6PIN HWSON (4521) (1.45) PART NUMBER (0.15) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) (3.05) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) VDSS VGSS 20 ±12 V V Drain Current (DC) (TA = 25°C) ID(DC) ±8.6 A Drain Current (pulse) Note1 ID(pulse) ±80 A Total Power Dissipation (2 unit) Note2 PT1 2.5 W Total Power Dissipation (2 unit) Note3 PT2 0.7 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. TA = 25°C Mounted on ceramic board. 3. TA = 25°C Mounted on FR4 board. Remark 1,2: Source 1 3: Gate 1 7: Drain (0.50) 5,6: Source 2 4: Gate 2 EQUIVALENT CIRCUIT Drain1 Gate1 Gate Protection Diode Source1 Drain2 Body Diode Gate2 Body Diode Gate Protection Diode Source2 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15612EJ1V0DS00 (1st edition) Date Published March 2002 NS CP(K) Printed in Japan © 2001 2.0±0.1 1 0.25 +0.1 −0.05 0.5±0.1 The µ PA2450 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 1.85±0.1 PACKAGE DRAWING (Unit: mm) DESCRIPTION µ PA2450 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1.0 mA 0.5 1.5 V | yfs | VDS = 10 V, ID = 4.0 A 5.0 RDS(on)1 VGS = 4.5 V, ID = 4.0 A 11 14 17.5 mΩ RDS(on)2 VGS = 4.0 V, ID = 4.0 A 11.5 14.5 18.5 mΩ RDS(on)3 VGS = 3.1 V, ID = 4.0 A 12.0 16.5 22.0 mΩ RDS(on)4 VGS = 2.5 V, ID = 4.0 A 15.3 20.5 27.5 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance 1.0 S Input Capacitance Ciss VDS = 10 V 540 pF Output Capacitance Coss VGS = 0 V 200 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 120 pF Turn-on Delay Time td(on) VDD = 10 V, ID = 4.0 A 40 ns tr VGS = 4.0 V 160 ns td(off) RG = 6.0 Ω 190 ns 200 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 16 V 9.0 nC Gate to Source Charge QGS VGS = 4.0 V 1.5 nC Gate to Drain Charge QGD ID = 8.6 A 4.5 nC VF(S-D) IF = 8.6 A, VGS = 0 V 0.83 V Reverse Recovery Time trr IF = 8.6 A, VGS = 0 V 300 ns Reverse Recovery Charge Qrr di/dt = 100 A / µs 760 nC Body Diode Forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton RL 50 Ω VDD 90% VDS VGS 0 IG = 2 mA td(off) tf toff Data Sheet G15612EJ1V0DS µ PA2450 TYPICAL CHARACTERISTICS (TA = 25°C) FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 1000 ID (pulse) 100 80 ID - Drain Current - A dT - Derating Factor - % 100 60 40 PW = 10 µs ited Lim 5 V) n) S(o RD S VG (@ 10 . = 4 PW = 100 µ s ID (DC) PW = 1 ms 1 PW = 10 ms PW = 100 ms DC (2 units) DC (1 unit) 0.1 20 Single Pulse PD (FET1):PD (FET2) =1:1 0 0 30 60 120 90 TA - Ambient Temperature - ˚C 0.01 0.1 150 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS Pulsed VDS = 10 V 10 ID - Drain Current - A ID - Drain Current - A Pulsed VGS = 4.5 V 4.0 V 2.5 V 20 10 TA = 125˚C 1 25˚C 75˚C 0.1 −25˚C 0.01 0 0.0 0.001 0.2 0.4 0.6 0.8 0 1.0 0.5 100 | yfs | - Forward Transfer Admittance - S 1.5 VDS = 10 V ID = 1 mA 1.0 0 50 100 1.5 2.0 2.5 3.0 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 0.5 −50 1.0 VGS - Gate to Sorce Voltage - V VDS - Drain to Source Voltage - V VGS(off) - Gate to Source Cut-off Voltage - V 100 100 40 30 10 1 VDS - Drain to Source Voltage - V 150 VDS = 10 V Pulsed 10 1 TA = 125˚C 75˚C 25˚C −25˚C 0.1 0.01 0.01 Tch - Channel Temperature - ˚C 0.1 1 10 100 ID - Drain Current - A Data Sheet G15612EJ1V0DS 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 50 Pulsed VGS = 2.5 V 40 30 TA = 125˚C 75˚C 25˚C 20 −25˚C 10 0.1 100 10 1 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ µ PA2450 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 Pulsed VGS = 3.1 V 25 TA = 125˚C 20 75˚C 25˚C −25˚C 15 10 0.1 Pulsed VGS = 4.0 V 20 TA = 125˚C 75˚C 25˚C 15 −25˚C 10 5 0.1 1 100 10 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 25 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 25 Pulsed VGS = 4.5 V 20 TA = 125˚C 75˚C 15 25˚C −25˚C 10 5 0.1 VGS = 2.5 V 4.0 V 20 4.5 V 15 10 5 −50 0 50 100 - Channel Temperature -˚C 150 RDS (on) - Drain to Source On-state Resistance - mΩ RDS (on) - Drain to Source On-state Resistance - mΩ 35 Tch 4 ID - Drain Current - A DRAIN TO SOURCE ON - STATE RESISTANCE vs. CHANNEL TEMPERATURE 25 100 10 1 ID - Drain Current - A 30 100 10 1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 Pulsed ID = 4.0 A 1.0 A 30 20 10 0 0 2 4 6 8 VGS - Gate to Source Voltage - V Data Sheet G15612EJ1V0DS 10 µ PA2450 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1000 VGS = 0 V f = 1 MHz td (on), tr, td(off), tf - Switchig Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 1000 Ciss Coss 100 Crss 10 0.01 1 0.1 10 td(off) tf 100 100 10 0.1 85˚C 25˚C 1 −40˚C 10 4 VGS - Gate to Drain Voltage - V IF - Diode Forward Current - A 10 1.0 ID - Drain Current - A DYNAMIC INPUT/OUTPUT CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE VGS = 0 V tr td(on) VDS - Drain to Source Voltage - V 100 VDD = 10 V VGS = 4.0 V RG = 6 Ω ID = 8.6 A VDD = 16 V 10 V 4V 3 2 1 0.1 0 0.3 0.5 0.7 0.9 1.1 1.3 0 2 1.5 4 6 8 10 QG - Gate Charge - nC VF(S-D) - Source to Drain Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - ˚C/W 0.01 0.1 S Single Pulse PD (FET1):PD (FET2) =1:1 Mounted on FR4 board on 50 cm 2x 1.0 mmt 178.6˚C/W 100 Mounted on Ceramic board on 2 50 cm x 1.1 mmt 50 ˚C/W 10 1 0.1 0.001 0.01 0.1 1 10 PW - Pulse Width - s Data Sheet G15612EJ1V0DS 100 1000 5 µ PA2450 [MEMO] 6 Data Sheet G15612EJ1V0DS µ PA2450 [MEMO] Data Sheet G15612EJ1V0DS 7 µ PA2450 • The information in this document is current as of March, 2002. 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