DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2707TP SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The µ PA2707TP which has a heat spreader is N- PART NUMBER channel MOS Field Effect Transistor designed for PACKAGE µ PA2707TP-E1 DC/DC converter and power management applications Power HSOP8 µ PA2707TP-E1-AZ of notebook computer. Note µ PA2707TP-E2 FEATURES Power HSOP8 µ PA2707TP-E2-AZ • Low on-state resistance Power HSOP8 Note Power HSOP8 Note Pb-free (This product does not contain Pb in RDS(on)1 = 4.3 mΩ MAX. (VGS = 10 V, ID = 9.0 A) external electrode.) RDS(on)2 = 5.6 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A) • Low Ciss: Ciss = 6600 pF TYP. (VDS = 10 V, VGS = 0 V) • Small and surface mount package (Power HSOP8) ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) ID(DC) ±42 A ID(pulse) ±76 A PT1 40 W PT2 4.3 W Tch 150 °C Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation Note2 Channel Temperature Tstg −55 to +150 °C Single Avalanche Current Note3 IAS 19 A Single Avalanche Energy Note3 EAS 36 mJ Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW =10 sec 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Ambient Note Channel to Case Rth(ch-A) 96.2 °C/W Rth(ch-C) 3.13 °C/W Note Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G17035EJ1V0DS00 (1st edition) Date Published June 2005 NS CP(K) Printed in Japan 2004 µ PA2707TP ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note MIN. TYP. MAX. UNIT 10 µA ±100 nA 2.5 V VGS(off) VDS = 10 V, ID = 1 mA 1.0 | yfs | VDS = 10 V, ID = 10 A 12 RDS(on)1 VGS = 10 V, ID = 10 A 3.3 4.3 mΩ RDS(on)2 VGS = 4.5 V, ID = 10 A 4.1 5.6 mΩ S Input Capacitance Ciss VDS = 10 V 6600 pF Output Capacitance Coss VGS = 0 V 970 pF Reverse Transfer Capacitance Crss f = 1 MHz 530 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 10 A 24 ns Rise Time Turn-off Delay Time tr VGS = 10 V 29 ns td(off) RG = 10 Ω 130 ns 39 ns Fall Time tf Total Gate Charge QG VDD = 15 V 52 nC Gate to Source Charge QGS VGS = 5 V 16 nC QGD ID = 19 A 18 nC VF(S-D) IF = 19 A, VGS = 0 V 0.8 V Reverse Recovery Time trr IF = 19 A, VGS = 0 V 42 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 41 nC Gate Resistance RG f = 1 MHz 1.2 Ω Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS ID VDS τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 RL VDD Data Sheet G17035EJ1V0DS td(on) ton tf toff µ PA2707TP TYPICAL CHARACTERISTICS (TA = 25°C) FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 ID(DC) Li = mit 10 ed V) G S R (a D S ( o t V n) ite m Li d 20 40 60 80 100 120 140 DC TC = 25°C Single pulse 0.1 0.01 160 10 ms 1 20 0 1 ms n 40 µs io 60 10 at 80 10 0 ip ss Di ID - Drain Current - A 100 = r we Po dT - Percentage of Rated Power - % PW ID(pulse) 120 0.1 1 10 100 VDS - Drain to Source Voltage - V TC - Case Temperature - ˚C TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 Rt h(ch-A) = 96.2°C/W 100 10 Rt h(ch-C) = 3.13°C/W 1 0.1 Single pulse Rt h(ch-A ) : M ount ed on galass epoxy board of 1 inch x 1 inch x 0.8 mm, TA = 25°C Rt h(ch-C) : TC = 25°C 0.01 100 µ 1m 10 m 100 m 1 PW - Pulse Width - s 10 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 1000 FORWARD TRANSFER CHARACTERISTICS 100 80 VGS = 10 V ID - Drain Current - A ID - Drain Current - A Tch = −55°C 25°C 75°C 150°C 10 60 4.5 V 40 20 Pulsed 0 0 0.1 0.2 0.3 0.4 1 0.1 Pulsed VDS = 10 V 0.01 0.5 0 1 2 3 4 5 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V Data Sheet G17035EJ1V0DS 3 µ PA2707TP GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 1 VDS = 10 V Pulsed 0 RDS(on) - Drain to Source On-state Resistance - mΩ -50 0 50 100 150 | yfs | - Forward Transfer Admittance - S 2 Tch = −55°C 25°C 75°C 150°C 10 1 V DS = 10 V Pulsed 0.1 0.01 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 15 Pulsed 10 VGS = 4.5 V 5 10 V 0 0.1 1 10 100 15 ID = 10 A Pulsed 10 5 0 0 5 10 15 20 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 10000 Ciss 8 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ 1 ID - Drain Current - A ID - Drain Current - A 6 VGS = 4.5 V 4 10 V 2 ID = 10 A Pulsed 1000 Coss Crss 100 0 VGS = 0 V f = 1 MHz 10 -50 0 50 100 150 Tch - Channel Temperature - °C 4 0.1 Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) - Gate Cut-off Voltage - V 3 0.1 1 10 VDS - Drain to Source Voltage - V Data Sheet G17035EJ1V0DS 100 µ PA2707TP SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 30 td(of f) 100 tf td(on) 10 tr V DD = 15 V V GS = 10 V RG = 10 Ω 1 0.1 1 10 6 5 VDD = 24 V 15 V 6V 20 10 2 VDS 0 0 10 20 30 40 50 QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 1000 V GS = 10 V trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 1 0 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 0V 1 0.1 Pulsed 0.01 0 0.2 0.4 0.6 0.8 1 100 10 di/dt = 100 A/µ s VGS = 0 V 1 1.2 0.1 1 10 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 120 VDD = 15 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 19 A 10 EAS = 36 mJ VDD = 15 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C Energy Derating Factor - % 100 IAS = 19 A 0.1 0.01 100 IF - Diode Forward Current - A VF(S-D) - Source to Drain Voltage - V IAS - Single Avalanche Current - A 4 VGS 3 ID - Drain Current - A 1 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1000 80 60 40 20 0 0.1 1 10 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - mH Data Sheet G17035EJ1V0DS 5 µ PA2707TP PACKAGE DRAWING (Unit: mm) Power HSOP8 8 5 1 6.0 ±0.3 4 0.8 ±0.2 5.2 +0.17 –0.2 0.05 ±0.05 0.15 S 4.4 ±0.15 +0.10 –0.05 1.44 TYP. 1.49 ±0.21 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8, 9: Drain 0.10 S 1.27 TYP. 1 +0.10 –0.05 4 2.9 MAX. 2.0 ±0.2 8 0.12 M 1.1 ±0.2 0.40 9 4.1 MAX. 5 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet G17035EJ1V0DS µ PA2707TP • The information in this document is current as of June, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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