DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1870B N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The µPA1870B is a switching device which can be driven directly by a 2.5 V power source. The µPA1870B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2 1.2 MAX. 1.0±0.05 0.25 3° +5° –3° FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 16.0 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 16.5 mΩ TYP. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 20.0 mΩ TYP. (VGS = 2.5 V, ID = 3.0 A) • Built-in G-S protection diode against ESD 1 0.65 PACKAGE µ PA1870BGR-9JG Power TSSOP8 0.6 +0.15 –0.1 4 6.4 ±0.2 4.4 ±0.1 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 ORDERING INFORMATION PART NUMBER 0.5 0.1±0.05 1.0 ±0.2 0.1 0.8 MAX. 0.27 +0.03 –0.08 0.10 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 20.0 V Gate to Source Voltage (VDS = 0 V) VGSS ±12.0 V ID(DC) ±6.0 A ID(pulse) ±80.0 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (DC) Note 1 Drain Current (pulse) Note 2 Total Power Dissipation Note 1 EQUIVALENT CIRCUIT Drain1 Gate1 Gate Protection Diode Source1 Drain2 Body Diode Gate2 Body Diode Gate Protection Diode Source2 2 Notes 1. Mounted on ceramic substrate of 50 cm x 1.1 mm 2. PW ≤ 10 µs, Duty Cycle ≤ 1% Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16741EJ1V0DS00 (1st edition) Date Published October 2003 NS CP(K) Printed in Japan 2003 µ PA1870B ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 20.0 V, VGS = 0 V 1.0 µA Gate Leakage Current IGSS VGS = ±12.0 V, VDS = 0 V ±10.0 µA VGS(off) VDS = 10.0 V, ID = 1.0 mA 1.5 V Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note 0.5 1.0 | yfs | VDS = 10.0 V, ID = 3.0 A 5 RDS(on)1 VGS = 4.5 V, ID = 3.0 A 12.0 16.0 20.0 mΩ RDS(on)2 VGS = 4.0 V, ID = 3.0 A 13.0 16.5 21.0 mΩ RDS(on)3 VGS = 2.5 V, ID = 3.0 A 15.0 20.0 27.0 mΩ S Input Capacitance Ciss VDS = 10.0 V 720 pF Output Capacitance Coss VGS = 0 V 166 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 125 pF Turn-on Delay Time td(on) VDD = 10.0 V, ID = 3.0 A 48 ns tr VGS = 4.0 V 245 ns td(off) RG = 10 Ω 315 ns 305 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 16.0 V 8.0 nC Gate to Source Charge QGS ID = 6.0 A 1.7 nC QGD VGS = 4.0 V 3.5 nC VF(S-D) IF = 6.0 A, VGS = 0 V 0.8 V Reverse Recovery Time trr IF = 6.0 A, VGS = 0 V 295 ns Reverse Recovery Charge Qrr di/dt = 50 A/µs 450 nC Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 0 10% 10% tr td(off) Wave Form td(on) ton RL 50 Ω VDD 90% VDS VGS 0 IG = 2 mA tf toff Data Sheet G16741EJ1V0DS µ PA1870B TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 2.5 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 Mounted on ceramic board of 50 cm2 x 1.1 mm, 2 units 2 1.5 Mounted on FR-4 board of 50 cm2 x 1.6 mm, 2 units 1 0.5 0 0 0 25 50 75 100 125 150 0 175 TA - Ambient Temperature - °C 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA RDS(on) Limited (at VGS = 4.5 V) 100 PW = 10 µ s 10 ID(DC) 1 ms 1 10 ms DC (2 units) 100 ms 0.1 Single pulse Mounted on ceramic board of 2 50 cm x 1.1 mm 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A 1000 1000 Mounted on FR-4 board of 2 25 cm x 1.6 mm 100 Mounted on ceramic board of 2 50 cm x 1.1 mm 10 1 Single pulse PD (FET1) : PD (FET2) = 1:1 0.1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16741EJ1V0DS 3 µ PA1870B DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 25 100 Pulsed VGS = 4.5 V VDS = 10.0 V Pulsed 10 20 ID - Drain Current - A ID - Drain Current - A 4.0 V 15 10 2.5 V 5 1 TA = 125°C 75°C 25°C −25°C 0.1 0.01 0.001 0 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.5 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V VDS = 10.0 V ID = 1.0 mA 1 0.5 50 100 VDS = 10.0 V Pulsed 10 0.1 0.01 40 TA = 125°C 75°C 25°C −25°C 20 10 10 10 100 50 V GS = 4.0 V Pulsed 40 TA = 125°C 75°C 25°C −25°C 30 20 10 0 0.01 0.1 1 ID - Drain Current - A ID - Drain Current - A 4 1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ VGS = 4.5 V Pulsed 1 0.1 ID - Drain Current - A 50 0.1 TA = −25°C 25°C 75°C 125°C 1 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0 0.01 2.5 100 Tch - Channel Temperature - °C 30 2 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1.5 0 1.5 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -50 1 Data Sheet G16741EJ1V0DS 10 100 µ PA1870B 50 VGS = 2.5 V Pulsed 40 TA = 125°C 75°C 25°C −25°C 30 20 10 0 0.01 0.1 1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID = 3.0 A Pulsed 40 30 20 10 0 0 4 6 8 10 12 VGS - Gate to Source Voltage - V 50 10000 ID = 3.0 A Pulsed 40 VGS = 2.5 V 4.0 V 4.5 V 30 20 10 VGS = 0 V f = 1.0 MHz 1000 Ciss Coss Crss 100 0 10 -50 0 50 100 150 0.1 Tch - Channel Temperature - °C 1 10 100 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS 1000 5 ID = 6.0 A VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 2 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 td(off) tf 100 tr td(on) VDD = 10.0 V VGS = 4.0 V RG = 10 Ω 4 VDD = 4.0 V 10.0 V 16.0 V 3 2 1 0 10 0.1 1 10 0 2 4 6 8 10 QG - Gate Charge - nC ID - Drain Current - A Data Sheet G16741EJ1V0DS 5 µ PA1870B SOURCE TO DRAIN FORWARD VOLTAGE IF - Diode Forward Current - A 100 VGS = 0 V Pulsed 10 1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 VF(S-D) - Source to Drain Voltage - V 6 Data Sheet G16741EJ1V0DS µ PA1870B • The information in this document is current as of October, 2003. 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