NEC UPA1870BGR-9JG

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1870B
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
The µPA1870B is a switching device which can be driven
directly by a 2.5 V power source.
The µPA1870B features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and
so on.
8
5
1
2, 3
4
5
6, 7
8
:Drain1
:Source1
:Gate1
:Gate2
:Source2
:Drain2
1.2 MAX.
1.0±0.05
0.25
3° +5°
–3°
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 16.0 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 16.5 mΩ TYP. (VGS = 4.0 V, ID = 3.0 A)
RDS(on)3 = 20.0 mΩ TYP. (VGS = 2.5 V, ID = 3.0 A)
• Built-in G-S protection diode against ESD
1
0.65
PACKAGE
µ PA1870BGR-9JG
Power TSSOP8
0.6 +0.15
–0.1
4
6.4 ±0.2
4.4 ±0.1
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
ORDERING INFORMATION
PART NUMBER
0.5
0.1±0.05
1.0 ±0.2
0.1
0.8 MAX.
0.27 +0.03
–0.08
0.10 M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20.0
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12.0
V
ID(DC)
±6.0
A
ID(pulse)
±80.0
A
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Drain Current (DC)
Note 1
Drain Current (pulse)
Note 2
Total Power Dissipation
Note 1
EQUIVALENT CIRCUIT
Drain1
Gate1
Gate
Protection
Diode
Source1
Drain2
Body
Diode
Gate2
Body
Diode
Gate
Protection
Diode
Source2
2
Notes 1. Mounted on ceramic substrate of 50 cm x 1.1 mm
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16741EJ1V0DS00 (1st edition)
Date Published October 2003 NS CP(K)
Printed in Japan
2003
µ PA1870B
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 20.0 V, VGS = 0 V
1.0
µA
Gate Leakage Current
IGSS
VGS = ±12.0 V, VDS = 0 V
±10.0
µA
VGS(off)
VDS = 10.0 V, ID = 1.0 mA
1.5
V
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
0.5
1.0
| yfs |
VDS = 10.0 V, ID = 3.0 A
5
RDS(on)1
VGS = 4.5 V, ID = 3.0 A
12.0
16.0
20.0
mΩ
RDS(on)2
VGS = 4.0 V, ID = 3.0 A
13.0
16.5
21.0
mΩ
RDS(on)3
VGS = 2.5 V, ID = 3.0 A
15.0
20.0
27.0
mΩ
S
Input Capacitance
Ciss
VDS = 10.0 V
720
pF
Output Capacitance
Coss
VGS = 0 V
166
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
125
pF
Turn-on Delay Time
td(on)
VDD = 10.0 V, ID = 3.0 A
48
ns
tr
VGS = 4.0 V
245
ns
td(off)
RG = 10 Ω
315
ns
305
ns
Rise Time
Turn-off Delay Time
Fall Time
tf
Total Gate Charge
QG
VDD = 16.0 V
8.0
nC
Gate to Source Charge
QGS
ID = 6.0 A
1.7
nC
QGD
VGS = 4.0 V
3.5
nC
VF(S-D)
IF = 6.0 A, VGS = 0 V
0.8
V
Reverse Recovery Time
trr
IF = 6.0 A, VGS = 0 V
295
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/µs
450
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
VGS
RL
VGS
RG
PG.
Wave Form
VDD
0
VGS
10%
PG.
90%
τ
τ = 1 µs
Duty Cycle ≤ 1%
2
90%
VDS
VDS
0
10%
10%
tr
td(off)
Wave Form
td(on)
ton
RL
50 Ω
VDD
90%
VDS
VGS
0
IG = 2 mA
tf
toff
Data Sheet G16741EJ1V0DS
µ PA1870B
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
2.5
120
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
Mounted on ceramic board of
50 cm2 x 1.1 mm, 2 units
2
1.5
Mounted on FR-4 board of
50 cm2 x 1.6 mm, 2 units
1
0.5
0
0
0
25
50
75
100
125
150
0
175
TA - Ambient Temperature - °C
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
RDS(on) Limited
(at VGS = 4.5 V)
100
PW = 10 µ s
10
ID(DC)
1 ms
1
10 ms
DC (2 units)
100 ms
0.1
Single pulse
Mounted on ceramic board of
2
50 cm x 1.1 mm
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
1000
1000
Mounted on FR-4 board of
2
25 cm x 1.6 mm
100
Mounted on ceramic board of
2
50 cm x 1.1 mm
10
1
Single pulse
PD (FET1) : PD (FET2) = 1:1
0.1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G16741EJ1V0DS
3
µ PA1870B
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
25
100
Pulsed
VGS = 4.5 V
VDS = 10.0 V
Pulsed
10
20
ID - Drain Current - A
ID - Drain Current - A
4.0 V
15
10
2.5 V
5
1
TA = 125°C
75°C
25°C
−25°C
0.1
0.01
0.001
0
0.0001
0
0.1
0.2
0.3
0.4
0.5
0.5
VDS - Drain to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate Cut-off Voltage - V
VDS = 10.0 V
ID = 1.0 mA
1
0.5
50
100
VDS = 10.0 V
Pulsed
10
0.1
0.01
40
TA = 125°C
75°C
25°C
−25°C
20
10
10
10
100
50
V GS = 4.0 V
Pulsed
40
TA = 125°C
75°C
25°C
−25°C
30
20
10
0
0.01
0.1
1
ID - Drain Current - A
ID - Drain Current - A
4
1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS = 4.5 V
Pulsed
1
0.1
ID - Drain Current - A
50
0.1
TA = −25°C
25°C
75°C
125°C
1
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
0.01
2.5
100
Tch - Channel Temperature - °C
30
2
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.5
0
1.5
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-50
1
Data Sheet G16741EJ1V0DS
10
100
µ PA1870B
50
VGS = 2.5 V
Pulsed
40
TA = 125°C
75°C
25°C
−25°C
30
20
10
0
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
ID = 3.0 A
Pulsed
40
30
20
10
0
0
4
6
8
10
12
VGS - Gate to Source Voltage - V
50
10000
ID = 3.0 A
Pulsed
40
VGS = 2.5 V
4.0 V
4.5 V
30
20
10
VGS = 0 V
f = 1.0 MHz
1000
Ciss
Coss
Crss
100
0
10
-50
0
50
100
150
0.1
Tch - Channel Temperature - °C
1
10
100
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
1000
5
ID = 6.0 A
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
2
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
td(off)
tf
100
tr
td(on)
VDD = 10.0 V
VGS = 4.0 V
RG = 10 Ω
4
VDD = 4.0 V
10.0 V
16.0 V
3
2
1
0
10
0.1
1
10
0
2
4
6
8
10
QG - Gate Charge - nC
ID - Drain Current - A
Data Sheet G16741EJ1V0DS
5
µ PA1870B
SOURCE TO DRAIN FORWARD VOLTAGE
IF - Diode Forward Current - A
100
VGS = 0 V
Pulsed
10
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
VF(S-D) - Source to Drain Voltage - V
6
Data Sheet G16741EJ1V0DS
µ PA1870B
• The information in this document is current as of October, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
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M8E 02. 11-1