NEC UPA2650T1E

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2650T1E
DUAL N-CHANNEL MOSFET
FOR SWITCHING
PIN CONNECTION (Top View)
DESCRIPTION
The μ PA2650T1E is a switching device, which can be driven
directly by a 4.5 V power source.
1
6
2
5
3
4 MOSFET2
The μ PA2650T1E contains dual MOSFET which features a
low on-state resistance and excellent switching characteristics,
MOSFET1
and is suitable for applications such as DC/DC converter of
portable machine and so on.
FEATURES
• 4.5 V drive available MOSFET
• Low on-state resistance MOSFET
MOSFET1 RDS(on)1 = 48 mΩ TYP. (VGS = 10 V, ID = 3.0 A)
RDS(on)2 = 55 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A)
MOSFET2 RDS(on)1 = 50 mΩ TYP. (VGS = 10 V, ID = 3.0 A)
1: Gate1
2: Drain1/Source2 (Heat sink2)
3: Gate2
4: Drain2 (Heat sink1)
5: Drain1/Source2 (Heat sink2)
6: Source1
RDS(on)2 = 57 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ PA2650T1E
6LD3x3MLP
Marking: A2650
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD = ±150 V TYP. (C = 200 pF, R = 0 Ω, Single Pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G18749EJ1V0DS00 (1st edition)
Date Published May 2007 NS CP(K)
Printed in Japan
2007
μ PA2650T1E
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
MOSFET1, MOSFET2
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
V
ID(DC)
±3.8
A
ID(pulse)
±15.2
A
PT
1.1
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Drain Current (DC)
Note1
Drain Current (pulse)
Note2
Total Power Dissipation
Note1
2
Notes 1. Mounted on a 1 in pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick FR-4 board
2
2
(Cu pad: 322 mm x 70 μm, FR-4: 1452 mm x 1.6 mmt)
2. PW ≤ 10 μs, Duty Cycle ≤ 1%
2
FET side: 97°C/W when mounted on a 1 in pad of 2 oz copper
2
Data Sheet G18749EJ1V0DS
μ PA2650T1E
ELECTRICAL CHARACTERISTICS (TA = 25°C)
MOSFET1, MOSFET2
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
μA
Gate Leakage Current
IGSS
VGS = ±12 V, VDS = 0 V
±10
μA
VGS(th)
VDS = VGS, ID = 0.25 mA
0.6
2.0
V
| yfs |
VDS = 10 V, ID = 1.5 A
1.0
Gate to Source Threshold Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
RDS(on)1
RDS(on)2
3.6
S
VGS = 10 V,
MOSFET1
48
65
mΩ
ID = 3.0 A
MOSFET2
50
65
mΩ
VGS = 4.5 V,
MOSFET1
55
75
mΩ
ID = 3.0 A
MOSFET2
57
75
mΩ
Input Capacitance
Ciss
VDS = 10 V,
220
pF
Output Capacitance
Coss
VGS = 0 V,
100
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
40
pF
Turn-on Delay Time
td(on)
VDD = 10 V, ID = 1.5 A,
8.4
ns
Rise Time
tr
VGS = 4.5 V,
7.3
ns
Turn-off Delay Time
td(off)
RG = 10 Ω
15
ns
Fall Time
tf
3.4
ns
Total Gate Charge
QG
VDD = 16 V,
2.9
nC
Gate to Source Charge
QGS
VGS = 4.5 V,
0.6
nC
QGD
ID = 3.0 A
1.0
nC
VF(S-D)
IF = 3.0 A, VGS = 0 V
0.89
V
Gate to Drain Charge
Body Diode Forward Voltage
Note
Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2%
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RL
RG
PG.
VGS
VGS
Wave Form
0
VGS
10%
IG = 2 mA
RL
50 Ω
VDD
VDD
90%
ID
90%
ID
VGS
0
D.U.T.
90%
ID
0 10%
PG.
10%
Wave Form
τ
τ = 1 μs
Duty Cycle ≤ 1%
td(on)
tr
ton
td(off)
tf
toff
Data Sheet G18749EJ1V0DS
3
μ PA2650T1E
MOSFET TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.6
Mounted on FR-4 board of
1452 mm2 x 1.6 mmt
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
1.2
0.8
0.4
0
0
0
25
50
75
100
125
150
175
0
25
TA - Ambient Temperature - °C
50
75
100
ID - Drain Current - A
100
R
(o
DS
n)
G
(V
S
ID(pulse)
d
it e
Lim V )
5
.
=4
PW
i
m
s
i
1i 0
1
=1
m
s
i
ID(DC)
DC
0.1
Single Pulse
Mounted on FR-4 board of
0.01
1452 mm2 x 1.6 mmt
0.1
1
10
100
VDS - Drain to Source Voltage - V
rth(ch-A) - Transient Thermal Resistance - °C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
MOSFET1, 2
Single Pulse
2
Mounted on FR-4 board of 1452 mm x 1.6 mmt
2
2
Cu pad of 645 mm x 70 μm (1 in )
1
0.1
100 μ
1m
10 m
100 m
1
PW - Pulse Width - s
4
150
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
10
125
Data Sheet G18749EJ1V0DS
10
100
1000
175
μ PA2650T1E
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
15
100
ID - Drain Current - A
ID - Drain Current - A
VGS = 10 V
4.5 V
10
2.5 V
5
10
TA = −25°C
25°C
75°C
125°C
1
0.1
VDS = 10 V
Pulsed
Pulsed
0
0.01
0
0.5
1
0
0.5
VDS - Drain to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
VDS = VGS
ID = 0.25 mA
1
0.5
0
25
50
75
2
2.5
3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 125 150
10
TA = −25°C
25°C
75°C
125°C
1
VDS = 10 V
Pulsed
0.1
0.01
0.1
1
10
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
80
60
4.5 V
40
10 V
20
0
0.01
MOSFET1
Pulsed
0.1
1
10
100
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS(th) - Gate to Source Threshold Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
1.5
0
1.5
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-50 -25
1
100
80
4.5 V
60
10 V
40
20
0
0.01
ID - Drain Current - A
MOSFET2
Pulsed
0.1
1
10
100
ID - Drain Current - A
Data Sheet G18749EJ1V0DS
5
μ PA2650T1E
120
ID = 3.0 A
100
80
1.5 A
60
40
MOSFET1
Pulsed
20
0
0
2
4
6
8
10
RDS(on) - Drain to Source On-state Resistance - mΩ
140
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
120
80
1.5 A
60
40
MOSFET2
Pulsed
20
0
0
2
4
6
8
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
140
120
100
VGS = 4.5 V
80
60
10 V
40
MOSFET1
ID = 3.0 A
Pulsed
20
0
-50 -25
0
25
50
75
100 125 150
140
120
100
VGS = 4.5 V
80
60
10 V
40
MOSFET2
ID = 3.0 A
Pulsed
20
0
-50
-25
0
25
50
75
100 125 150
Tch - Channel Temperature - °C
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
100
Ciss
100
Coss
Crss
VGS = 0 V
f = 1.0 MHz
10
0.01
VDD = 10 V
VGS = 4.5 V
RG = 10 Ω
td(off)
td(on)
10
tr
tf
1
0.1
1
10
100
0.1
VDS - Drain to Source Voltage - V
6
ID = 3.0 A
100
VGS - Gate to Source Voltage - V
1000
Ciss, Coss, Crss - Capacitance - pF
140
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1
10
ID - Drain Current - A
Data Sheet G18749EJ1V0DS
100
μ PA2650T1E
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
DYNAMIC INPUT CHARACTERISTICS
6
MOSFET1, 2
VGS = 0 V
Pulsed
10
VGS - Gate to Source Voltage - V
IF - Diode Forward Current - A
100
1
0.1
VDD = 16 V
10 V
4V
4
2
ID = 3.0 A
0
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
0.5
1
1.5
2
2.5
3
QG - Gate Charge - nC
VF(S-D) - Source to Drain Voltage - V
Data Sheet G18749EJ1V0DS
7
μ PA2650T1E
PACKAGE DRAWING (Unit: mm)
3
0.2 RFE
3
A B
+0.03
0.02 −0.02
2x
0.15 C
C
0.15 C 2 x
0.1
2
0.95
PIN CONNECTION
0.75
0.4
5
1
0.95
0.05
6
1.1
6x
0.2 MIN.
0.08 C
0.4 ±0.05
0.1 C
Heat sink 2
0.9 ±0.1
0.4 ±0.05
4
8
3
1.6 ±0.05
Heat sink 1
Data Sheet G18749EJ1V0DS
1: Gate1
2: Drain1/Source2 (Heat sink2)
3: Gate2
4: Drain2 (Heat sink1)
5: Drain1/Source2 (Heat sink2)
6: Source1
μ PA2650T1E
• The information in this document is current as of May, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1