DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA679TB N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA679TB is a switching device, which can be driven directly by a 2.5 V power source. The µ PA679TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) FEATURES +0.1 2.1 ±0.1 0.2 -0 1.25 ±0.1 • 2.5 V drive available • Low on-state resistance N-ch RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A) RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A) P-ch RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.20 A) RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A) • Two MOS FET circuits in same size package as SC-70 ORDERING INFORMATION PART NUMBER PACKAGE µ PA679TB ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 20 / −20 V Gate to Source Voltage (VDS = 0 V) VGSS ±12 / m12 V Drain Current (DC) ID(DC) ±0.35 / m0.25 A ID(pulse) ±1.40 / m1.00 A PT 0.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Total Power Dissipation (2 units) Note2 5 4 1 2 3 0 to 0.1 0.7 0.65 0.9 ±0.1 1.3 2.0 ±0.2 SC-88 (SSP) Note1 6 0.65 Marking: YA Drain Current (pulse) +0.1 0.15 -0.05 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on FR-4 board of 2500 mm x 1.1 mm PIN CONNECTION (Top View) 6 5 4 1. 2. 3. 4. 5. 6. 1 2 Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain 1 3 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with caution for electrostatic discharge. VESD = ±100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16615EJ1V0DS00 (1st edition) Date Published February 2003 NS CP(K) Printed in Japan 2003 µ PA679TB ELECTRICAL CHARACTERISTICS (1) N-ch PART (TA = 25°°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 20.0 V, VGS = 0 V 1.0 µA Gate Leakage Current IGSS VGS = ±12.0 V, VDS = 0 V ±10 µA VGS(off) VDS = 10.0 V, ID = 1.0 mA 0.50 1.00 1.50 V | yfs | VDS = 10.0 V, ID = 0.30 A 0.25 0.75 RDS(on)1 VGS = 4.5 V, ID = 0.30 A 0.38 0.57 Ω RDS(on)2 VGS = 4.0 V, ID = 0.30 A 0.41 0.60 Ω RDS(on)3 VGS = 2.5 V, ID = 0.15 A 0.60 0.88 Ω Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = 10.0 V 28 pF Output Capacitance Coss VGS = 0 V 11 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 7 pF Turn-on Delay Time td(on) VDD = 10.0 V, ID = 0.30 A 20 ns tr VGS = 4.0 V 51 ns td(off) RG = 10 Ω 94 ns 87 ns 0.84 V Rise Time Turn-off Delay Time Fall Time tf Body Diode Forward Voltage VF(S-D) IF = 0.35 A, VGS = 0 V Note Pulsed: PW ≤ 350 µs, Duty cycle ≤ 2% TEST CIRCUIT SWITCHING TIME D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% 90% VDS 90% VGS 0 VDS τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS 10% 0 10% Wave Form td(on) tr ton td(off) tf toff Data Sheet G16615EJ1V0DS µ PA679TB (2) P-ch PART (TA = 25°°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −20.0 V, VGS = 0 V −1.0 µA Gate Leakage Current IGSS VGS = m12.0 V, VDS = 0 V m10 µA −1.80 V Gate Cut-off Voltage Note Forward Transfer Admittance VGS(off) VDS = −10.0 V, ID = −1.0 mA −0.80 −1.30 | yfs | VDS = −10.0 V, ID = −0.20 A 0.2 0.6 RDS(on)1 VGS = −4.5 V, ID = −0.20 A 1.17 1.45 Ω RDS(on)2 VGS = −4.0 V, ID = −0.20 A 1.25 1.55 Ω RDS(on)3 VGS = −2.5 V, ID = −0.15 A 2.25 2.98 Ω Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = −10.0 V 29 pF Output Capacitance Coss VGS = 0 V 15 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 3 pF Turn-on Delay Time td(on) VDD = −10.0 V, ID = −0.20 A 23 ns VGS = −4.0 V 39 ns RG = 10 Ω 50 ns 33 ns 0.88 V Rise Time tr Turn-off Delay Time td(off) Fall Time tf Body Diode Forward Voltage VF(S-D) IF = 0.25 A, VGS = 0 V Note Pulsed: PW ≤ 350 µs, Duty cycle ≤ 2% TEST CIRCUIT SWITCHING TIME D.U.T. VGS(−) RL VGS RG PG. Wave Form VDD 0 VGS 10% 90% VDS(−) 90% VGS(−) 0 90% VDS VDS τ τ = 1 µs Duty Cycle ≤ 1% 10% 0 10% Wave Form td(on) tr ton td(off) tf toff Data Sheet G16615EJ1V0DS 3 µ PA679TB TYPICAL CHARACTERISTICS (1) N-ch PART (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 0.24 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 Mounted on FR-4 board of 2 2500 m m x 1.1 m m 2 units total 0.2 0.16 0.12 0.08 0.04 0 0 0 25 50 75 100 125 150 175 0 25 TA - Ambient Temperature - °C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1.4 10 ID - Drain Current - A ID - Drain Current - A V GS = 4.5 V 4.0 V 2.5 V 1 0.8 0.6 0.4 0 125 150 175 V DS = 10.0 V Pulsed 1 0.1 T A = 125°C 75°C 25°C −25°C 0.01 0.0001 0 0.4 0.8 1.2 1.6 0 VDS - Drain to Source Voltage - V V DS = 10.0 V ID = 1.0 m A 1.2 1 0.8 0.6 0 50 100 1 1.5 2 2.5 3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 1.4 0.4 - 50 0.5 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V 100 0.001 0.2 150 10 1 V DS = 10.0 V Pulsed T A = −25°C 25°C 75°C 125°C 0.1 0.01 0.001 Tch - Channel Temperature - °C 4 75 FORWARD TRANSFER CHARACTERISTICS Pulsed 1.2 50 TA - Ambient Temperature - °C 0.01 0.1 1 ID - Drain Current - A Data Sheet G16615EJ1V0DS 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1.2 Pulsed 1 V GS = 2.5 V, ID = 0.15 A 0.8 0.6 0.4 V GS = 4.0 V, ID = 0.30 A V GS = 4.5 V, ID = 0.30 A 0.2 0 - 50 0 50 100 150 RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω µ PA679TB DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.2 ID = 0.30 A Pulsed 1 0.8 0.6 0.4 0.2 0 0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.2 VGS = 4.5 V Pulsed 1 0.8 0.6 T A = 125°C 75°C 25°C −25°C 0.4 0.2 0 0.01 0.1 1 10 ID - Drain Current - A 12 VGS = 4.0 V Pulsed 1 TA = 125°C 75°C 25°C −25°C 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - Ω T A = 125°C 75°C 0.8 0.6 0 0.01 10 1.2 100 25°C −25°C 0.2 8 ID - Drain Current - A 1.2 0.4 6 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 4 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω Tch - Channel Temperature - °C 2 VGS = 2.5 V Pulsed V GS = 0 V f = 1.0 MHz C iss 10 C oss C rss 1 0.1 1 10 0.1 1 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A Data Sheet G16615EJ1V0DS 5 µ PA679TB SWITCHING CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 V DD = 10.0 V V GS = 4.0 V R G = 10 Ω IF - Diode Forward Current - A td(on), tr, td(off), tf - Switching Time - ns 1000 td(off) 100 tf tr 1 0.1 0.01 td(on) 10 0.01 0.001 0.1 1 10 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V ID - Drain Current - A 6 VGS = 0 V Pulsed Data Sheet G16615EJ1V0DS 1.4 µ PA679TB (2) P-ch PART (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 0.24 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 Mounted on FR-4 board of 2 2500 m m x 1.1 m m 2 units total 0.2 0.16 0.12 0.08 0.04 0 0 0 25 50 75 100 125 150 175 0 25 TA - Ambient Temperature - °C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 125 150 175 -10 Pulsed - 0.8 ID - Drain Current - A ID - Drain Current - A 75 FORWARD TRANSFER CHARACTERISTICS -1 V G S = −4.5 V - 0.6 −4.0 V - 0.4 −2.5 V - 0.2 V D S = −10.0 V Pulsed -1 -0.1 T A = 125°C 75°C 25°C −25°C -0.01 -0.001 0 -0.0001 0 - 0.4 - 0.8 - 1.2 - 1.6 -2 0 VDS - Drain to Source Voltage - V V D S = −10.0 V I D = −1.0 m A - 1.2 -1 - 0.8 - 0.6 -50 0 50 100 -2 -3 -4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S - 1.6 - 1.4 -1 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V 50 TA - Ambient Temperature - °C 150 10 V DS = −10.0 V Pulsed 1 T A = −25°C 25°C 75°C 125°C 0.1 0.01 - 0.001 Tch - Channel Temperature - °C - 0.01 - 0.1 -1 - 10 ID - Drain Current - A Data Sheet G16615EJ1V0DS 7 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 Pulsed VGS = −2.5 V, ID = −0.15 A 3 2 1 VGS = −4.0 V, ID = −0.20 A VGS = −4.5 V, ID = −0.20 A 0 -50 0 50 100 150 RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω µ PA679TB DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 4 ID = −0.20 A Pulsed 3 2 1 0 0 -2 V GS = −4.5 V Pulsed 3 T A = 125°C 75°C 25°C −25°C 1 0 - 0.01 - 0.1 -1 - 10 ID - Drain Current - A V GS = −4.0 V Pulsed 3 T A = 125°C 25°C −25°C 1 0 - 0.01 - 0.1 T A = 125°C 75°C 25°C −25°C 2 1 V GS = −2.5 V Pulsed -1 -1 - 10 ID - Drain Current - A Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - Ω 8 75°C 2 100 - 0.1 - 12 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 4 0 - 0.01 - 10 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 3 -8 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 2 -6 VGS - Gate to Source Voltage - V Tch - Channel Temperature - °C 4 -4 - 10 ID - Drain Current - A VGS = 0 V f = 1.0 MHz C iss C oss 10 C rss 1 - 0.1 -1 - 10 VDS - Drain to Source Voltage - V Data Sheet G16615EJ1V0DS - 100 µ PA679TB SWITCHING CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 V D D = −10.0 V V G S = −4.0 V R G = 10 Ω IF - Diode Forward Current - A td(on), tr, td(off), tf - Switching Time - ns 1000 100 t d(off) tr tf VGS = 0 V Pulsed 1 0.1 0.01 t d(on) 10 -0.01 0.001 -0.1 -1 -10 ID - Drain Current - A 0.4 0.6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V Data Sheet G16615EJ1V0DS 9 µ PA679TB • The information in this document is current as of February, 2003. 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