NEC UPA679TB

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA679TB
N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µ PA679TB is a switching device, which can be driven directly by a 2.5 V power source.
The µ PA679TB features a low on-state resistance and excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
FEATURES
+0.1
2.1 ±0.1
0.2 -0
1.25 ±0.1
• 2.5 V drive available
• Low on-state resistance
N-ch RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A)
RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A)
P-ch RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.20 A)
RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)
• Two MOS FET circuits in same size package as SC-70
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA679TB
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20 / −20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12 / m12
V
Drain Current (DC)
ID(DC)
±0.35 / m0.25
A
ID(pulse)
±1.40 / m1.00
A
PT
0.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Total Power Dissipation (2 units)
Note2
5
4
1
2
3
0 to 0.1
0.7
0.65
0.9 ±0.1
1.3
2.0 ±0.2
SC-88 (SSP)
Note1
6
0.65
Marking: YA
Drain Current (pulse)
+0.1
0.15 -0.05
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2
2. Mounted on FR-4 board of 2500 mm x 1.1 mm
PIN CONNECTION (Top View)
6
5
4
1.
2.
3.
4.
5.
6.
1
2
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain 1
3
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with
caution for electrostatic discharge.
VESD = ±100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16615EJ1V0DS00 (1st edition)
Date Published February 2003 NS CP(K)
Printed in Japan
2003
µ PA679TB
ELECTRICAL CHARACTERISTICS
(1) N-ch PART (TA = 25°°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 20.0 V, VGS = 0 V
1.0
µA
Gate Leakage Current
IGSS
VGS = ±12.0 V, VDS = 0 V
±10
µA
VGS(off)
VDS = 10.0 V, ID = 1.0 mA
0.50
1.00
1.50
V
| yfs |
VDS = 10.0 V, ID = 0.30 A
0.25
0.75
RDS(on)1
VGS = 4.5 V, ID = 0.30 A
0.38
0.57
Ω
RDS(on)2
VGS = 4.0 V, ID = 0.30 A
0.41
0.60
Ω
RDS(on)3
VGS = 2.5 V, ID = 0.15 A
0.60
0.88
Ω
Gate Cut-off Voltage
Note
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
S
Input Capacitance
Ciss
VDS = 10.0 V
28
pF
Output Capacitance
Coss
VGS = 0 V
11
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
7
pF
Turn-on Delay Time
td(on)
VDD = 10.0 V, ID = 0.30 A
20
ns
tr
VGS = 4.0 V
51
ns
td(off)
RG = 10 Ω
94
ns
87
ns
0.84
V
Rise Time
Turn-off Delay Time
Fall Time
tf
Body Diode Forward Voltage
VF(S-D)
IF = 0.35 A, VGS = 0 V
Note Pulsed: PW ≤ 350 µs, Duty cycle ≤ 2%
TEST CIRCUIT
SWITCHING TIME
D.U.T.
VGS
RL
VGS
RG
PG.
Wave Form
VDD
0
VGS
10%
90%
VDS
90%
VGS
0
VDS
τ
τ = 1 µs
Duty Cycle ≤ 1%
2
90%
VDS
10%
0
10%
Wave Form
td(on)
tr
ton
td(off)
tf
toff
Data Sheet G16615EJ1V0DS
µ PA679TB
(2) P-ch PART (TA = 25°°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = −20.0 V, VGS = 0 V
−1.0
µA
Gate Leakage Current
IGSS
VGS = m12.0 V, VDS = 0 V
m10
µA
−1.80
V
Gate Cut-off Voltage
Note
Forward Transfer Admittance
VGS(off)
VDS = −10.0 V, ID = −1.0 mA
−0.80
−1.30
| yfs |
VDS = −10.0 V, ID = −0.20 A
0.2
0.6
RDS(on)1
VGS = −4.5 V, ID = −0.20 A
1.17
1.45
Ω
RDS(on)2
VGS = −4.0 V, ID = −0.20 A
1.25
1.55
Ω
RDS(on)3
VGS = −2.5 V, ID = −0.15 A
2.25
2.98
Ω
Note
Drain to Source On-state Resistance
Note
S
Input Capacitance
Ciss
VDS = −10.0 V
29
pF
Output Capacitance
Coss
VGS = 0 V
15
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
3
pF
Turn-on Delay Time
td(on)
VDD = −10.0 V, ID = −0.20 A
23
ns
VGS = −4.0 V
39
ns
RG = 10 Ω
50
ns
33
ns
0.88
V
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Body Diode Forward Voltage
VF(S-D)
IF = 0.25 A, VGS = 0 V
Note Pulsed: PW ≤ 350 µs, Duty cycle ≤ 2%
TEST CIRCUIT
SWITCHING TIME
D.U.T.
VGS(−)
RL
VGS
RG
PG.
Wave Form
VDD
0
VGS
10%
90%
VDS(−)
90%
VGS(−)
0
90%
VDS
VDS
τ
τ = 1 µs
Duty Cycle ≤ 1%
10%
0
10%
Wave Form
td(on)
tr
ton
td(off)
tf
toff
Data Sheet G16615EJ1V0DS
3
µ PA679TB
TYPICAL CHARACTERISTICS
(1) N-ch PART (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
0.24
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
Mounted on FR-4 board of
2
2500 m m x 1.1 m m
2 units total
0.2
0.16
0.12
0.08
0.04
0
0
0
25
50
75
100
125
150
175
0
25
TA - Ambient Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1.4
10
ID - Drain Current - A
ID - Drain Current - A
V GS = 4.5 V
4.0 V
2.5 V
1
0.8
0.6
0.4
0
125
150
175
V DS = 10.0 V
Pulsed
1
0.1
T A = 125°C
75°C
25°C
−25°C
0.01
0.0001
0
0.4
0.8
1.2
1.6
0
VDS - Drain to Source Voltage - V
V DS = 10.0 V
ID = 1.0 m A
1.2
1
0.8
0.6
0
50
100
1
1.5
2
2.5
3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
1.4
0.4
- 50
0.5
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL
TEMPERATURE
VGS(off) - Gate Cut-off Voltage - V
100
0.001
0.2
150
10
1
V DS = 10.0 V
Pulsed
T A = −25°C
25°C
75°C
125°C
0.1
0.01
0.001
Tch - Channel Temperature - °C
4
75
FORWARD TRANSFER CHARACTERISTICS
Pulsed
1.2
50
TA - Ambient Temperature - °C
0.01
0.1
1
ID - Drain Current - A
Data Sheet G16615EJ1V0DS
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.2
Pulsed
1
V GS = 2.5 V, ID = 0.15 A
0.8
0.6
0.4
V GS = 4.0 V, ID = 0.30 A
V GS = 4.5 V, ID = 0.30 A
0.2
0
- 50
0
50
100
150
RDS(on) - Drain to Source On-state Resistance - Ω
RDS(on) - Drain to Source On-state Resistance - Ω
µ PA679TB
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.2
ID = 0.30 A
Pulsed
1
0.8
0.6
0.4
0.2
0
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
VGS = 4.5 V
Pulsed
1
0.8
0.6
T A = 125°C
75°C
25°C
−25°C
0.4
0.2
0
0.01
0.1
1
10
ID - Drain Current - A
12
VGS = 4.0 V
Pulsed
1
TA = 125°C
75°C
25°C
−25°C
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10
CAPACITANCE vs. DRAIN TO SOURCE
VOLTAGE
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - Ω
T A = 125°C
75°C
0.8
0.6
0
0.01
10
1.2
100
25°C
−25°C
0.2
8
ID - Drain Current - A
1.2
0.4
6
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
4
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - Ω
RDS(on) - Drain to Source On-state Resistance - Ω
Tch - Channel Temperature - °C
2
VGS = 2.5 V
Pulsed
V GS = 0 V
f = 1.0 MHz
C iss
10
C oss
C rss
1
0.1
1
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
Data Sheet G16615EJ1V0DS
5
µ PA679TB
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
V DD = 10.0 V
V GS = 4.0 V
R G = 10 Ω
IF - Diode Forward Current - A
td(on), tr, td(off), tf - Switching Time - ns
1000
td(off)
100
tf
tr
1
0.1
0.01
td(on)
10
0.01
0.001
0.1
1
10
0.4
0.6
0.8
1
1.2
VF(S-D) - Source to Drain Voltage - V
ID - Drain Current - A
6
VGS = 0 V
Pulsed
Data Sheet G16615EJ1V0DS
1.4
µ PA679TB
(2) P-ch PART (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
0.24
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
Mounted on FR-4 board of
2
2500 m m x 1.1 m m
2 units total
0.2
0.16
0.12
0.08
0.04
0
0
0
25
50
75
100
125
150
175
0
25
TA - Ambient Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
125
150
175
-10
Pulsed
- 0.8
ID - Drain Current - A
ID - Drain Current - A
75
FORWARD TRANSFER CHARACTERISTICS
-1
V G S = −4.5 V
- 0.6
−4.0 V
- 0.4
−2.5 V
- 0.2
V D S = −10.0 V
Pulsed
-1
-0.1
T A = 125°C
75°C
25°C
−25°C
-0.01
-0.001
0
-0.0001
0
- 0.4
- 0.8
- 1.2
- 1.6
-2
0
VDS - Drain to Source Voltage - V
V D S = −10.0 V
I D = −1.0 m A
- 1.2
-1
- 0.8
- 0.6
-50
0
50
100
-2
-3
-4
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
- 1.6
- 1.4
-1
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL
TEMPERATURE
VGS(off) - Gate Cut-off Voltage - V
50
TA - Ambient Temperature - °C
150
10
V DS = −10.0 V
Pulsed
1
T A = −25°C
25°C
75°C
125°C
0.1
0.01
- 0.001
Tch - Channel Temperature - °C
- 0.01
- 0.1
-1
- 10
ID - Drain Current - A
Data Sheet G16615EJ1V0DS
7
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4
Pulsed
VGS = −2.5 V, ID = −0.15 A
3
2
1
VGS = −4.0 V, ID = −0.20 A
VGS = −4.5 V, ID = −0.20 A
0
-50
0
50
100
150
RDS(on) - Drain to Source On-state Resistance - Ω
RDS(on) - Drain to Source On-state Resistance - Ω
µ PA679TB
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
4
ID = −0.20 A
Pulsed
3
2
1
0
0
-2
V GS = −4.5 V
Pulsed
3
T A = 125°C
75°C
25°C
−25°C
1
0
- 0.01
- 0.1
-1
- 10
ID - Drain Current - A
V GS = −4.0 V
Pulsed
3
T A = 125°C
25°C
−25°C
1
0
- 0.01
- 0.1
T A = 125°C
75°C
25°C
−25°C
2
1
V GS = −2.5 V
Pulsed
-1
-1
- 10
ID - Drain Current - A
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - Ω
8
75°C
2
100
- 0.1
- 12
CAPACITANCE vs. DRAIN TO SOURCE
VOLTAGE
4
0
- 0.01
- 10
4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
3
-8
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - Ω
RDS(on) - Drain to Source On-state Resistance - Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
2
-6
VGS - Gate to Source Voltage - V
Tch - Channel Temperature - °C
4
-4
- 10
ID - Drain Current - A
VGS = 0 V
f = 1.0 MHz
C iss
C oss
10
C rss
1
- 0.1
-1
- 10
VDS - Drain to Source Voltage - V
Data Sheet G16615EJ1V0DS
- 100
µ PA679TB
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
V D D = −10.0 V
V G S = −4.0 V
R G = 10 Ω
IF - Diode Forward Current - A
td(on), tr, td(off), tf - Switching Time - ns
1000
100
t d(off)
tr
tf
VGS = 0 V
Pulsed
1
0.1
0.01
t d(on)
10
-0.01
0.001
-0.1
-1
-10
ID - Drain Current - A
0.4
0.6
0.8
1
1.2
1.4
VF(S-D) - Source to Drain Voltage - V
Data Sheet G16615EJ1V0DS
9
µ PA679TB
• The information in this document is current as of February, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
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M8E 02. 11-1