DATA SHEET MOS INTEGRATED CIRCUIT µPD4482163, 4482183, 4482323, 4482363 8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT Description The µPD4482163 is a 524,288-word by 16-bit, the µPD4482183 is a 524,288-word by 18-bit, µPD4482323 is a 262,144word by 32-bit and the µPD4482363 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell. The µPD4482163, µPD4482183, µPD4482323 and µPD4482363 integrates unique synchronous peripheral circuitry, 2bit burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single clock input (CLK). The µPD4482163, µPD4482183, µPD4482323 and µPD4482363 are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer memory. ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal operation. The µPD4482163, µPD4482183, µPD4482323 and µPD4482363 are packaged in 100-pin PLASTIC LQFP with a 1.4 mm package thickness for high density and low capacitive loading. Features • Single 3.3 V power supply • Synchronous operation • Operating temperature : TA = 0 to 70 °C (-A44, -A50, -A60) TA = −40 to +85 °C (-A44Y, -A50Y, -A60Y) • Internally self-timed write control • Burst read / write : Interleaved burst and linear burst sequence • Fully registered inputs and outputs for pipelined operation • Double-Cycle deselect timing • All registers triggered off positive clock edge • 3.3 V LVTTL Compatible : All inputs and outputs • Fast clock access time : 2.8 ns (225 MHz), 3.1 ns (200 MHz), 3.5 ns (167 MHz) • Asynchronous output enable : /G • Burst sequence selectable : MODE • Sleep mode : ZZ (ZZ = Open or Low : Normal operation) • Separate byte write enable : /BW1 to /BW4, /BWE (µPD4482323, µPD4482363) /BW1, /BW2, /BWE (µPD4482163, µPD4482183) Global write enable : /GW • Three chip enables for easy depth expansion • Common I/O using three state outputs The information in this document is subject to change without notice. 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Document No. M14904EJ3V0DS00 (3rd edition) Date Published December 2002 NS CP(K) Printed in Japan TheThe mark major revised points. shows mark major revised points. ★ shows 2000 µPD4482163, 4482183, 4482323, 4482363 Ordering Information Part number Access Clock Core Supply Time Frequency Voltage Temperature ns MHz V °C µPD4482163GF-A44 2.8 225 3.3 ± 0.165 µPD4482163GF-A50 3.1 200 µPD4482163GF-A60 3.5 167 µPD4482183GF-A44 2.8 225 µPD4482183GF-A50 3.1 200 µPD4482183GF-A60 3.5 167 µPD4482323GF-A44 2.8 225 µPD4482323GF-A50 3.1 200 µPD4482323GF-A60 3.5 167 µPD4482363GF-A44 2.8 225 µPD4482363GF-A50 3.1 200 µPD4482363GF-A60 3.5 167 µPD4482163GF-A44Y 2.8 225 µPD4482163GF-A50Y 3.1 200 µPD4482163GF-A60Y 3.5 167 µPD4482183GF-A44Y 2.8 225 µPD4482183GF-A50Y 3.1 200 µPD4482183GF-A60Y 3.5 167 µPD4482323GF-A44Y 2.8 225 µPD4482323GF-A50Y 3.1 200 µPD4482323GF-A60Y 3.5 167 µPD4482363GF-A44Y 2.8 225 µPD4482363GF-A50Y 3.1 200 µPD4482363GF-A60Y 3.5 167 2 Data Sheet M14904EJ3V0DS I/O Interface 3.3 V LVTTL Operating 0 to 70 Package 100-pin PLASTIC LQFP (14 × 20) −40 to +85 µPD4482163, 4482183, 4482323, 4482363 Pin Configurations /××× indicates active low signal. 100-pin PLASTIC LQFP (14 x 20) [µPD4482163GF, µPD4482183GF] A9 A8 /ADV /AP /AC /G /BWE /GW CLK VSS VDD /CE2 /BW1 /BW2 NC NC CE2 /CE A7 A6 Marking Side 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 NC 1 80 A18 NC 2 79 NC NC 3 78 NC VDDQ 4 77 VDDQ VSSQ 5 76 VSSQ NC 6 75 NC NC 7 74 I/OP1, NC I/O9 8 73 I/O8 I/O10 9 72 I/O7 VSSQ 10 71 VSSQ VDDQ 11 70 VDDQ I/O11 12 69 I/O6 I/O12 13 68 I/O5 NC 14 67 VSS VDD 15 66 NC NC 16 65 VDD VSS 17 64 ZZ I/O13 18 63 I/O4 I/O14 19 62 I/O3 VDDQ 20 61 VDDQ VSSQ 21 60 VSSQ I/O15 22 59 I/O2 I/O16 23 58 I/O1 I/OP2, NC 24 57 NC NC 25 56 NC VSSQ 26 55 VSSQ VDDQ 27 54 VDDQ NC 28 53 NC NC 29 52 NC NC 30 51 NC A16 A15 A14 A13 A12 A11 A10 NC A17 VSS VDD NC A0 NC A1 A2 A3 A4 A5 MODE 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Remark Refer to Package Drawing for the 1-pin index mark. Data Sheet M14904EJ3V0DS 3 µPD4482163, 4482183, 4482323, 4482363 Pin Identification (µPD4482163GF, µPD4482183GF) Symbol Pin No. Description A0 to A18 37, 36, 35, 34, 33, 32, 100, 99, 82, 81, 44, 45, 46, 47, 48, 49, 50, 43, 80 Synchronous Address Input I/O1 to I/O16 58, 59, 62, 63, 68, 69, 72, 73, 8, 9, 12, 13, 18, 19, 22, 23 Synchronous Data In, Synchronous / Asynchronous Data Out I/OP1, NC Note 74 Synchronous Data In (Parity), I/OP2, NC Note 24 Synchronous / Asynchronous Data Out (Parity) /ADV 83 Synchronous Burst Address Advance Input /AP 84 Synchronous Address Status Processor Input /AC 85 Synchronous Address Status Controller Input /CE,CE2, /CE2 98, 97, 92 Synchronous Chip Enable Input /BW1, /BW2, /BWE 93, 94, 87 Synchronous Byte Write Enable Input /GW 88 Synchronous Global Write Input /G 86 Asynchronous Output Enable Input CLK 89 Clock Input MODE 31 Asynchronous Burst Sequence Select Input Do not change state during normal operation ZZ 64 Asynchronous Power Down State Input VDD 15, 41, 65, 91 Power Supply VSS 17, 40, 67, 90 Ground VDDQ 4, 11, 20, 27, 54, 61, 70, 77 Output Buffer Power Supply VSSQ 5, 10, 21, 26, 55, 60, 71, 76 Output Buffer Ground NC 1, 2, 3, 6, 7, 14, 16, 25, 28, 29, 30, 38, 39, 42, 51, 52, 53, 56, 57, 66, 75, 78, 79, 95, 96 No Connection Note NC (No Connection) is used in the µPD4482163GF. I/OP1 and I/OP2 are used in the µPD4482183GF. 4 Data Sheet M14904EJ3V0DS µPD4482163, 4482183, 4482323, 4482363 100-pin PLASTIC LQFP (14 x 20) [µPD4482323GF, µPD4482363GF] A9 A8 /ADV /AP /AC /G /BWE /GW CLK VSS VDD /CE2 /BW1 /BW2 /BW3 /BW4 CE2 /CE A7 A6 Marking Side 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 I/OP3, NC 1 80 I/OP2, NC I/O17 2 79 I/O16 I/O18 3 78 I/O15 VDDQ 4 77 VDDQ VSSQ 5 76 VSSQ I/O19 6 75 I/O14 I/O20 7 74 I/O13 I/O21 8 73 I/O12 I/O22 9 72 I/O11 VSSQ 10 71 VSSQ VDDQ 11 70 VDDQ I/O23 12 69 I/O10 I/O24 13 68 I/O9 NC 14 67 VSS VDD 15 66 NC NC 16 65 VDD VSS 17 64 ZZ I/O25 18 63 I/O8 I/O26 19 62 I/O7 VDDQ 20 61 VDDQ VSSQ 21 60 VSSQ I/O27 22 59 I/O6 I/O28 23 58 I/O5 I/O29 24 57 I/O4 I/O30 25 56 I/O3 VSSQ 26 55 VSSQ VDDQ 27 54 VDDQ I/O31 28 53 I/O2 I/O32 29 52 I/O1 I/OP4, NC 30 51 I/OP1, NC A16 A15 A14 A13 A12 A11 A10 A17 NC VDD VSS NC NC A0 A1 A2 A3 A4 A5 MODE 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Remark Refer to Package Drawing for the 1-pin index mark. Data Sheet M14904EJ3V0DS 5 µPD4482163, 4482183, 4482323, 4482363 Pin Identification (µPD4482323GF, µPD4482363GF) Symbol Pin No. Description A0 to A17 37, 36, 35, 34, 33, 32, 100, 99, 82, 81, 44, 45, 46, 47, 48, 49, 50, 43 Synchronous Address Input I/O1 to I/O32 52, 53, 56, 57, 58, 59, 62, 63, 68, 69, 72, 73, 74, Synchronous Data In, 75, 78, 79, 2, 3, 6, 7, 8, 9, 12, 13, 18, 19, 22, 23, Synchronous / Asynchronous Data Out 24, 25, 28, 29 I/OP1, NC Note 51 Synchronous Data In (Parity), I/OP2, NC Note 80 Synchronous / Asynchronous Data Out (Parity) I/OP3, NC Note 1 I/OP4, NC Note 30 /ADV 83 Synchronous Burst Address Advance Input /AP 84 Synchronous Address Status Processor Input /AC 85 Synchronous Address Status Controller Input /CE, CE2, /CE2 98, 97, 92 Synchronous Chip Enable Input /BWE1 to /BWE4, /BWE 93, 94, 95, 96, 87 Synchronous Byte Write Enable Input /GW 88 Synchronous Global Write Input /G 86 Asynchronous Output Enable Input CLK 89 Clock Input MODE 31 Asynchronous Burst Sequence Select Input Do not change state during normal operation ZZ 64 Asynchronous Power Down State Input VDD 15, 41, 65, 91 Power Supply VSS 17, 40, 67, 90 Ground VDDQ 4, 11, 20, 27, 54, 61, 70, 77 Output Buffer Power Supply VSSQ 5, 10, 21, 26, 55, 60, 71, 76 Output Buffer Ground NC 14, 16, 38, 39, 42, 66 No Connection Note NC (No Connection) is used in the µPD4482323GF. I/OP1 to I/OP4 are used in the µPD4482363GF. 6 Data Sheet M14904EJ3V0DS µPD4482163, 4482183, 4482323, 4482363 Block Diagrams [µPD4482163, µPD4482183] 19 Address Registers A0 to A18 MODE /ADV CLK 17 19 A0, A1 A1’ Binary Q1 Counter and Logic A0’ CLR Q0 /AC /AP 8/9 Byte 1 Write Register /BW1 8/9 Byte 2 Write Register /BW2 Row and Column Decoders Byte 1 Write Driver Memory cell array 1,024 rows Byte 2 Write Driver 512 × 16 columns (8,388,608 bits) 512 × 18 columns (9,437,184 bits) /BWE /GW 16/18 Enable Register /CE CE2 /CE2 /G 2 16/18 Output Registers Output Buffers Input Registers 16/18 I/O1 to I/O16 I/OP1 to I/OP2 Power Down Control ZZ Burst Sequence [µPD4482163, µPD4482183] Interleaved Burst Sequence Table (MODE = VDD) External Address A18 to A2, A1, A0 1st Burst Address A18 to A2, A1, /A0 2nd Burst Address A18 to A2, /A1, A0 3rd Burst Address A18 to A2, /A1, /A0 Linear Burst Sequence Table (MODE = VSS) External Address A18 to A2, 0, 0 A18 to A2, 0, 1 A18 to A2, 1, 0 A18 to A2, 1, 1 1st Burst Address A18 to A2, 0, 1 A18 to A2, 1, 0 A18 to A2, 1, 1 A18 to A2, 0, 0 2nd Burst Address A18 to A2, 1, 0 A18 to A2, 1, 1 A18 to A2, 0, 0 A18 to A2, 0, 1 3rd Burst Address A18 to A2, 1, 1 A18 to A2, 0, 0 A18 to A2, 0, 1 A18 to A2, 1, 0 Data Sheet M14904EJ3V0DS 7 µPD4482163, 4482183, 4482323, 4482363 [µPD4482323, µPD4482363] 18 Address Registers A0 to A17 MODE /ADV CLK 16 18 A0, A1 A1’ Binary Q1 Counter and Logic A0’ CLR Q0 /AC /AP /BW1 Byte 1 Write Register /BW2 Byte 2 Write Register /BW3 Byte 3 Write Register /BW4 /BWE Byte 4 Write Register Row and Column Decoders 8/9 8/9 8/9 8/9 Byte 1 Write Driver Byte 2 Write Driver Byte 3 Write Driver Byte 4 Write Driver 32/36 /GW Memory cell array 1,024 rows 256 × 32 columns (8,388,608 bits) 256 × 36 columns (9,437,184 bits) 32/36 Output Registers Enable Register /CE CE2 /CE2 /G 4 Input Registers 32/36 I/O1 to I/O32 I/OP1 to I/OP4 Power Down Control ZZ [µPD4482323, µPD4482363] Interleaved Burst Sequence Table (MODE = VDD) External Address A17 to A2, A1, A0 1st Burst Address A17 to A2, A1, /A0 2nd Burst Address A17 to A2, /A1, A0 3rd Burst Address A17 to A2, /A1, /A0 Linear Burst Sequence Table (MODE = VSS) External Address A17 to A2, 0, 0 A17 to A2, 0, 1 A17 to A2, 1, 0 A17 to A2, 1, 1 1st Burst Address A17 to A2, 0, 1 A17 to A2, 1, 0 A17 to A2, 1, 1 A17 to A2, 0, 0 2nd Burst Address A17 to A2, 1, 0 A17 to A2, 1, 1 A17 to A2, 0, 0 A17 to A2, 0, 1 3rd Burst Address A17 to A2, 1, 1 A17 to A2, 0, 0 A17 to A2, 0, 1 A17 to A2, 1, 0 8 Data Sheet M14904EJ3V0DS Output Buffers µPD4482163, 4482183, 4482323, 4482363 Asynchronous Truth Table Operation /G I/O Read Cycle L Dout Read Cycle H High-Z Write Cycle × High-Z, Din Deselected × High-Z Remark × : don’t care Synchronous Truth Table /CE CE2 /CE2 /AP /AC /ADV /WRITE CLK Address Deselected Note Operation H × × × L × × L→H None Deselected Note L L × L × × × L→H None Deselected Note L × H L × × × L→H None Deselected Note L L × H L × × L→H None Deselected Note L × H H L × × L→H None Read Cycle / Begin Burst L H L L × × × L→H External Read Cycle / Begin Burst L H L H L × H L→H External Read Cycle / Continue Burst × × × H H L H L→H Next Read Cycle / Continue Burst H × × × H L H L→H Next Read Cycle / Suspend Burst × × × H H H H L→H Current Read Cycle / Suspend Burst H × × × H H H L→H Current Write Cycle / Begin Burst L H L H L × L L→H External Write Cycle / Continue Burst × × × H H L L L→H Next Write Cycle / Continue Burst H × × × H L L L→H Next Write Cycle / Suspend Burst × × × H H H L L→H Current Write Cycle / Suspend Burst H × × × H H L L→H Current Note Deselect status is held until new “Begin Burst” entry. Remarks 1. × : don’t care 2. /WRITE = L means any one or more byte write enables (/BW1, /BW2, /BW3 or /BW4) and /BWE are LOW or /GW is LOW. /WRITE = H means the following two cases. (1) /BWE and /GW are HIGH. (2) /BW1, /BW2 and /GW are HIGH, and /BWE is LOW. [µPD4482163, µPD4482183] /BW1 to /BW4 and /GW are HIGH, and /BWE is LOW. [µPD4482323, µPD4482363] Data Sheet M14904EJ3V0DS 9 µPD4482163, 4482183, 4482323, 4482363 Partial Truth Table for Write Enables [µPD4482163, µPD4482183] Operation /GW /BWE /BW1 /BW2 Read Cycle H H × × Read Cycle H L H H Write Cycle / Byte 1 (I/O [1:8], I/OP1) H L L H Write Cycle / Byte 2 (I/O [9:16], I/OP2) H L H L Write Cycle / All Bytes H L L L Write Cycle / All Bytes L × × × /GW /BWE /BW1 /BW2 /BW3 /BW4 Read Cycle H H × × × × Read Cycle H L H H H H Remark × : don’t care [µPD4482323, µPD4482363] Operation Write Cycle / Byte 1 (I/O [1:8], I/OP1) H L L H H H Write Cycle / Byte 2 (I/O [9:16], I/OP2) H L H L H H Write Cycle / Byte 3 (I/O [17:24], I/OP3) H L H H L H Write Cycle / Byte 4 (I/O [25:32], I/OP4) H L H H H L Write Cycle / All Bytes H L L L L L Write Cycle / All Bytes L × × × × × Remark × : don’t care Pass-Through Truth Table Previous Cycle Present Cycle Next Cycle Operation Add /WRITE I/O Operation Add /CEs /WRITE /G I/O Operation Write Cycle Ak L Dn(Ak) Read Cycle Am L H L Q1(Ak) Read Q1(Am) - H × × High-Z No Carry Over from (Begin Burst) Deselected Previous Cycle Remarks 1. × : don’t care 2. /WRITE = L means any one or more byte write enables (/BW1, /BW2, /BW3 or /BW4) and /BWE are LOW or /GW is LOW. /WRITE = H means the following two cases. (1) /BWE and /GW are HIGH. (2) /BW1, /BW2 and /GW are HIGH, and /BWE is LOW. [µPD4482163, µPD4482183] /BW1 to /BW4 and /GW are HIGH, and /BWE is LOW. [µPD4482323, µPD4482363] /CEs = L means /CE is LOW, /CE2 is LOW and CE2 is HIGH. /CEs = H means /CE is HIGH or /CE2 is HIGH or CE2 is LOW. ZZ (Sleep) Truth Table 10 ZZ Chip Status ≤ 0.2 V Active Open Active ≥ VDD − 0.2 V Sleep Data Sheet M14904EJ3V0DS µPD4482163, 4482183, 4482323, 4482363 Electrical Specifications Absolute Maximum Ratings Parameter Supply voltage Symbol Conditions MIN. TYP. MAX. Unit Notes VDD –0.5 +4.0 V VDDQ –0.5 VDD V Input voltage VIN –0.5 VDD + 0.5 V 1, 2 Input / Output voltage VI/O –0.5 VDDQ + 0.5 V 1, 2 Operating ambient temperature TA 0 70 °C –40 +85 –55 +125 Output supply voltage -A44, -A50, -A60 -A44Y, -A50Y, -A60Y Storage temperature Tstg °C Notes 1. –2.0 V (MIN.) (Pulse width : 2 ns) 2. VDDQ + 2.3 V (MAX.) (Pulse width : 2 ns) Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended DC Operating Conditions Parameter MIN. TYP. MAX. Unit VDD 3.135 3.3 3.465 V VDDQ 3.135 3.3 3.465 V High level input voltage VIH 2.0 VDDQ + 0.3 V Low level input voltage VIL +0.8 V Supply voltage Output supply voltage Symbol Conditions –0.3 Note Note –0.8 V (MIN.) (Pulse Width : 2 ns) Data Sheet M14904EJ3V0DS 11 µPD4482163, 4482183, 4482323, 4482363 DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) Parameter Symbol Test condition MIN. TYP. MAX. Unit Input leakage current ILI VIN (except ZZ, MODE) = 0 V to VDD –2 +2 µA I/O leakage current ILO VI/O = 0 V to VDDQ, Outputs are disabled –2 +2 µA Operating supply current IDD Device selected, Cycle = MAX. 440 mA VIN ≤ VIL or VIN ≥ VIH, II/O = 0 mA -A44 Note -A44Y -A50 400 -A50Y -A60 320 -A60Y IDD1 Suspend cycle, Cycle = MAX. 180 /AC, /AP, /ADV, /GW, /BWEs ≥ VIH, VIN ≤ VIL or VIN ≥ VIH, II/O = 0 mA Standby supply current ISB Device deselected, Cycle = 0 MHz 30 mA VIN ≤ VIL or VIN ≥ VIH, All inputs are static ISB1 Device deselected, Cycle = 0 MHz 15 VIN ≤ 0.2 V or VIN ≥ VDD – 0.2 V, VI/O ≤ 0.2 V, All inputs are static ISB2 Device deselected, Cycle = MAX. 130 VIN ≤ VIL or VIN ≥ VIH Power down supply current ISBZZ ZZ ≥ VDD – 0.2 V, VI/O ≤ VDDQ + 0.2 V High level output voltage VOH IOH = –4.0 mA Low level output voltage VOL IOL = +8.0 mA 15 mA 2.4 V 0.4 V Capacitance (TA = 25 °C, f = 1MHz) Parameter Symbol Test conditions MIN. TYP. MAX. Unit Input capacitance CIN VIN = 0 V 6.0 pF Input / Output capacitance CI/O VI/O = 0 V 8.0 pF Clock Input capacitance Cclk Vclk = 0 V 6.0 pF Remark These parameters are periodically sampled and not 100% tested. 12 Data Sheet M14904EJ3V0DS µPD4482163, 4482183, 4482323, 4482363 AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) AC Test Conditions Input waveform (Rise / Fall time = 1 ns (20 to 80%)) 3.0 V 1.5 V Test ponts 1.5 V 1.5 V Test points 1.5 V VSS Output waveform Output load condition CL : 30 pF 5 pF (TKHQX1, TKHQX2, TGLQX, TGHQZ, TKHQZ) External load at test VT = +1.5 V 50 Ω ZO = 50 Ω I/O (Output) CL Remark CL includes capacitance's of the probe and jig, and stray capacitances. Data Sheet M14904EJ3V0DS 13 µPD4482163, 4482183, 4482323, 4482363 Read and Write Cycle Parameter Symbol -A44 -A50 -A60 Unit -A44Y -A50Y -A60Y (225 MHz) (200 MHz) (167 MHz) Standard Alias MIN. MAX. MIN. MAX. MIN. MAX. Cycle time TKHKH TCYC 4.4 – 5.0 – 6.0 – ns Clock access time TKHQV TCD – 2.8 – 3.1 – 3.5 ns Output enable access time TGLQV TOE – 2.8 – 3.1 – 3.5 ns Clock high to output active TKHQX1 TDC1 0 – 0 – 0 – ns Clock high to output change TKHQX2 TDC2 1.5 – 1.5 – 1.5 – ns Output enable to output active TGLQX TOLZ 0 – 0 – 0 – ns Output disable to output High-Z TGHQZ TOHZ 0 2.8 0 3.1 0 3.5 ns Clock high to output High-Z TKHQZ TCZ 1.5 2.8 1.5 3.1 1.5 3.5 ns Clock high pulse width TKHKL TCH 1.8 – 2.0 – 2.0 – ns Clock low pulse width TKLKH TCL 1.8 – 2.0 – 2.0 – ns Setup times TAVKH TAS 1.4 – 1.5 – 1.5 – ns TADSVKH TSS Data in TDVKH TDS Write enable TWVKH TWS TADVVKH – Chip enable TEVKH – Address TKHAX TAH 0.4 – 0.5 – 0.5 – ns TKHADSX TSH Data in TKHDX TDH Write enable TKHWX TWH TKHADVX – TKHEX – Power down entry time TZZE TZZE – 8.8 – 10.0 – 12.0 ns Power down recovery time TZZR TZZR – 8.8 – 10.0 – 12.0 ns Address Address status Address advance Hold times Address status Address advance Chip enable 14 Data Sheet M14904EJ3V0DS Note READ CYCLE TKHKH CLK TADSVKH TKHKL TKHADSX TKLKH /AP TADSVKH TKHADSX /AC TAVKH TKHAX A1 Address A2 TADVVKH A3 TKHADVX /ADV TKHWX TWVKH TKHWX /BWE /BWs Note3 /GW Note3 TEVKH TKHEX /CEs Note1 /G TGLQV High-Z Data In TGLQX High-Z Data Out TGHQZ TKHQX2 High-Z Q1(A1) Q1(A2) TKHQV TKHQZ Note2 Q2(A2) Q3(A2) Q4(A2) Q1(A2) Notes 1. /CEs refers to /CE, CE2 and /CE2. When /CEs is LOW, /CE and /CE2 are LOW and CE2 is HIGH. When /CEs is HIGH, /CE and /CE2 are HIGH and CE2 is LOW. 2. Outputs are disabled within two clock cycles after deselect. 3. If /GW is set to low level or /BWE is set to low level and one of /BW1 to /BW4 is set to low level, Q1(A3) is not output. 15 Remark Qn(A2) refers to output from address A2. Q1-Q4 refer to outputs according to burst sequence. Q1(A3) µPD4482163, 4482183, 4482323, 4482363 Data Sheet M14904EJ3V0DS TWVKH 16 WRITE CYCLE TKHKH CLK TADSVKH TKHADSX TKHKL TKLKH /AP TADSVKH TKHADSX /AC TAVKH Address TKHAX A1 A2 TKHADVX /ADV TWVKH /BWENote1 /BWs TWVKH TKHWX TKHWX /GWNote1 TEVKH TKHEX /CEs Note2 /G Data In High-Z TDVKH D1(A1) TGHQZ Data Out D1(A2) TKHDX D2(A2) D2(A2) D3(A2) D4(A2) D1(A3) D2(A3) D3(A3) High-Z Notes 1. All bytes WRITE can be initiated by /GW LOW or /GW HIGH and /BWE, /BW1 to /BW4 LOW. 2. /CEs refers to /CE, CE2 and /CE2. When /CEs is LOW, /CE and /CE2 are LOW and CE2 is HIGH. When /CEs is HIGH, /CE and /CE2 are HIGH and CE2 is LOW. µPD4482163, 4482183, 4482323, 4482363 Data Sheet M14904EJ3V0DS TADVVKH A3 READ / WRITE CYCLE TKHKH CLK TKLKH TKHKL TADSVKH TKHADSX /AP TADSVKH TKHADSX /AC TAVKH TKHAX A1 Address A2 A3 TADVVKH TKHADVX TWVKH TKHWX TWVKH TKHWX /BWE Note1 /BWs /GW Note1 TEVKH TKHEX /CEs Note2 /G Data In Data Out High-Z TDVKH TGHQZ TKHQV High-Z TKHQX1 TKHDX High-Z D1(A2) TGLQX Q1(A1) High-Z Q1(A2) Q1(A3) Q2(A3) Q3(A3) Q4(A3) High-Z Notes 1. All bytes WRITE can be initiated by /GW LOW or /GW HIGH and /BWE, /BW1 to /BW4 LOW. 2. /CEs refers to /CE, CE2 and /CE2. When /CEs is LOW, /CE and /CE2 are LOW and CE2 is HIGH. When /CEs is HIGH, /CE and /CE2 are HIGH and CE2 is LOW. 17 µPD4482163, 4482183, 4482323, 4482363 Data Sheet M14904EJ3V0DS /ADV 18 SINGLE READ / WRITE CYCLE TKHKH CLK TKLKH TKHKL TADSVKH TKHADSX /AC TAVKH TKHAX Address A2 A1 A5 A4 A3 TWVKH TKHWX TWVKH TKHWX A7 A6 A8 A9 /BWE Note1 /BWs Note4 Note4 TEVKH TKHEX /CEs Note2 /G TDVKH TKHDX High-Z Data In Data Out High-Z D1(A5) TGLQV TGLQX Q1(A1) TGHQZ Q1(A2) Q1(A3) Q1(A4) D1(A6) High-Z D1(A7) TKHQZ TKHQV High-Z Note3 Q1(A7) Q1(A8) Notes 1. All bytes WRITE can be initiated by /GW LOW or /GW HIGH and /BWE, /BW1 to /BW4 LOW. 2. /CEs refers to /CE, CE2 and /CE2. When /CEs is LOW, /CE and /CE2 are LOW and CE2 is HIGH. When /CEs is HIGH, /CE and /CE2 are HIGH and CE2 is LOW. 3. Outputs are disabled within two clock cycles after deselect. 4. If /GW is set to low level or /BWE is set to low level and one of /BW1 to /BW4 is set to low level, Q1(A9) is not output. Remark /AP is HIGH and /ADV is don't care. Q1(A9) µPD4482163, 4482183, 4482323, 4482363 Data Sheet M14904EJ3V0DS /GW Note1 POWER DOWN (ZZ) CYCLE TKHKH CLK TKHKL TKLKH /AP /AC Address A1 A2 /BWE /BWs /GW /CEs /G High-Z Data Out High-Z Q1(A1) Q1(A2) TZZR TZZE ZZ Power Down (ISBZZ) State 19 µPD4482163, 4482183, 4482323, 4482363 Data Sheet M14904EJ3V0DS /ADV 20 STOP CLOCK CYCLE TKHKH CLK TKHKL TKLKH /AP /AC Address A1 A2 /BWE /BWs /GW /CEs /G Data In High-Z High-Z Data Out High-Z High-Z Q1(A1) Power Down State (ISB1) Note Note VIN ≤ 0.2 V or VIN ≥ VDD − 0.2 V, VI/O ≤ 0.2 V Q1(A2) µPD4482163, 4482183, 4482323, 4482363 Data Sheet M14904EJ3V0DS /ADV µPD4482163, 4482183, 4482323, 4482363 Package Drawing 100-PIN PLASTIC LQFP (14x20) A B 80 81 51 50 detail of lead end S C D R Q 31 30 100 1 F G H I J M K P S N S L M NOTE ITEM Each lead centerline is located within 0.13 mm of its true position (T.P.) at maximum material condition. MILLIMETERS A 22.0±0.2 B 20.0±0.2 C 14.0±0.2 D 16.0±0.2 F 0.825 G 0.575 H 0.32 +0.08 −0.07 I J 0.13 0.65 (T.P.) K 1.0±0.2 L 0.5±0.2 M 0.17 +0.06 −0.05 N 0.10 P 1.4 Q 0.125±0.075 R 3° +7° −3° S 1.7 MAX. S100GF-65-8ET-1 Data Sheet M14904EJ3V0DS 21 µPD4482163, 4482183, 4482323, 4482363 Recommended Soldering Condition Please consult with our sales offices for soldering conditions of the µPD4482163, 4482183, 4482323 and 4482363. Types of Surface Mount Devices µPD4482163GF : 100-pin PLASTIC LQFP (14 x 20) µPD4482183GF : 100-pin PLASTIC LQFP (14 x 20) µPD4482323GF : 100-pin PLASTIC LQFP (14 x 20) µPD4482363GF : 100-pin PLASTIC LQFP (14 x 20) 22 Data Sheet M14904EJ3V0DS µPD4482163, 4482183, 4482323, 4482363 Revision History Edition/ Date 3rd edition/ Dec. 2002 Page Type of This Previous edition edition Throughout Throughout Location Description (Previous edition → This edition) revision Modification − Preliminary Data Sheet → Data Sheet Addition − Extended operating temperature products (TA = −40 to +85 °C) Data Sheet M14904EJ3V0DS 23 µPD4482163, 4482183, 4482323, 4482363 [MEMO] 24 Data Sheet M14904EJ3V0DS µPD4482163, 4482183, 4482323, 4482363 [MEMO] Data Sheet M14904EJ3V0DS 25 µPD4482163, 4482183, 4482323, 4482363 [MEMO] 26 Data Sheet M14904EJ3V0DS µPD4482163, 4482183, 4482323, 4482363 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. Data Sheet M14904EJ3V0DS 27 µPD4482163, 4482183, 4482323, 4482363 • The information in this document is current as of December, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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