NEC UPD4481162GF-C60

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4481162, 4481182, 4481322, 4481362
8M-BIT ZEROSBTM SRAM
PIPELINED OPERATION
Description
The µPD4481162 is a 524,288-word by 16-bit, the µPD4481182 is a 524,288-word by 18-bit, the µPD4481322 is a
262,144-word by 32-bit and the µPD4481362 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with
advanced CMOS technology using full CMOS six-transistor memory cell.
The µPD4481162, µPD4481182, µPD4481322 and µPD4481362 are optimized to eliminate dead cycles for read to
write, or write to read transitions. These ZEROSB static RAMs integrate unique synchronous peripheral circuitry, 2-bit
burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the
single clock input (CLK).
The µPD4481162, µPD4481182, µPD4481322 and µPD4481362 are suitable for applications which require
synchronous operation, high speed, low voltage, high density and wide bit configuration, such as buffer memory.
ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”).
In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal
operation.
The µPD4481162, µPD4481182, µPD4481322 and µPD4481362 are packaged in 100-pin PLASTIC LQFP with a 1.4
mm package thickness for high density and low capacitive loading.
Features
• Low voltage core supply : VDD = 3.3 ± 0.165 V (-A44, -A50, -A60, -A75, -A44Y, -A50Y, -A60Y, -A75Y)
VDD = 2.5 ± 0.125 V (-C60, -C75, -C60Y, -C75Y)
• Synchronous operation
• Operating temperature : TA = 0 to 70 °C (-A44, -A50, -A60, -A75, -C60, -C75)
TA = −40 to +85 °C (-A44Y, -A50Y, -A60Y, -A75Y, -C60Y, -C75Y)
• 100 percent bus utilization
• Internally self-timed write control
• Burst read / write : Interleaved burst and linear burst sequence
• Fully registered inputs and outputs for pipelined operation
• All registers triggered off positive clock edge
• 3.3V or 2.5V LVTTL Compatible : All inputs and outputs
• Fast clock access time : 2.8 ns (225 MHz), 3.2 ns (200 MHz), 3.5 ns (167 MHz) , 4.2 ns (133 MHz)
• Asynchronous output enable : /G
• Burst sequence selectable : MODE
• Sleep mode : ZZ (ZZ = Open or Low : Normal operation)
• Separate byte write enable : /BW1 to /BW4 (µPD4481322 and µPD4481362)
/BW1 and /BW2 (µPD4481162 and µPD4481182)
• Three chip enables for easy depth expansion
• Common I/O using three state outputs
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M15562EJ3V0DS00 (3rd edition)
Date Published December 2002 NS CP(K)
Printed in Japan
The mark  shows major revised points.
2001
µPD4481162, 4481182, 4481322, 4481362
Ordering Information
Part number
(1/2)
Access
Clock
Core Supply
I/O Interface
Time
Frequency
Voltage
Temperature
ns
MHz
V
°C
µPD4481162GF-A44
2.8
225
3.3 ± 0.165
µPD4481162GF-A50
3.2
200
µPD4481162GF-A60
3.5
167
µPD4481162GF-A75
4.2
133
µPD4481182GF-A44
2.8
225
µPD4481182GF-A50
3.2
200
µPD4481182GF-A60
3.5
167
µPD4481182GF-A75
4.2
133
µPD4481322GF-A44
2.8
225
µPD4481322GF-A50
3.2
200
µPD4481322GF-A60
3.5
167
µPD4481322GF-A75
4.2
133
µPD4481362GF-A44
2.8
225
µPD4481362GF-A50
3.2
200
µPD4481362GF-A60
3.5
167
µPD4481362GF-A75
4.2
133
µPD4481162GF-C60
3.5
167
µPD4481162GF-C75
4.2
133
µPD4481182GF-C60
3.5
167
µPD4481182GF-C75
4.2
133
µPD4481322GF-C60
3.5
167
µPD4481322GF-C75
4.2
133
µPD4481362GF-C60
3.5
167
µPD4481362GF-C75
4.2
133
3.3 V LVTTL Note
Operating
0 to 70
Package
100-pin PLASTIC
LQFP (14 x 20)
3.3 V or 2.5 V LVTTL
3.3 V LVTTL Note
3.3 V or 2.5 V LVTTL
3.3 V LVTTL Note
3.3 V or 2.5 V LVTTL
3.3 V LVTTL Note
3.3 V or 2.5 V LVTTL
2.5 ± 0.125
2.5 V LVTTL
Note Although 2.5V LVTTL interface can also be used, a performance becomes equivalent to -A60 (167 MHz).
2
Data Sheet M15562EJ3V0DS
µPD4481162, 4481182, 4481322, 4481362
(2/2)
Part number
Access
Clock
Core Supply
I/O Interface
Time
Frequency
Voltage
Temperature
ns
MHz
V
°C
µPD4481162GF-A44Y
2.8
225
3.3 ± 0.165
µPD4481162GF-A50Y
3.2
200
µPD4481162GF-A60Y
3.5
167
µPD4481162GF-A75Y
4.2
133
µPD4481182GF-A44Y
2.8
225
µPD4481182GF-A50Y
3.2
200
µPD4481182GF-A60Y
3.5
167
µPD4481182GF-A75Y
4.2
133
µPD4481322GF-A44Y
2.8
225
µPD4481322GF-A50Y
3.2
200
µPD4481322GF-A60Y
3.5
167
µPD4481322GF-A75Y
4.2
133
µPD4481362GF-A44Y
2.8
225
µPD4481362GF-A50Y
3.2
200
µPD4481362GF-A60Y
3.5
167
µPD4481362GF-A75Y
4.2
133
µPD4481162GF-C60Y
3.5
167
µPD4481162GF-C75Y
4.2
133
µPD4481182GF-C60Y
3.5
167
µPD4481182GF-C75Y
4.2
133
µPD4481322GF-C60Y
3.5
167
µPD4481322GF-C75Y
4.2
133
µPD4481362GF-C60Y
3.5
167
µPD4481362GF-C75Y
4.2
133
3.3 V LVTTL Note
Operating
−40 to +85
Package
100-pin PLASTIC
LQFP (14 x 20)
3.3 V or 2.5 V LVTTL
3.3 V LVTTL Note
3.3 V or 2.5 V LVTTL
3.3 V LVTTL Note
3.3 V or 2.5 V LVTTL
3.3 V LVTTL Note
3.3 V or 2.5 V LVTTL
2.5 ± 0.125
2.5 V LVTTL
Note Although 2.5V LVTTL interface can also be used, a performance becomes equivalent to -A60Y (167 MHz).
Data Sheet M15562EJ3V0DS
3
µPD4481162, 4481182, 4481322, 4481362
Pin Configurations
/××× indicates active low signal.
100-pin PLASTIC LQFP (14 × 20)
[µPD4481162GF, µPD4481182GF]
A9
A8
A17
NC
ADV
/G
/CKE
/WE
CLK
VSS
VDD
/CE2
/BW1
/BW2
NC
NC
CE2
/CE
A7
A6
Marking Side
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
NC
1
80
A18
NC
2
79
NC
NC
3
78
NC
VDDQ
4
77
VDDQ
VSSQ
5
76
VSSQ
NC
6
75
NC
NC
7
74
I/OP1, NC
I/O9
8
73
I/O8
I/O10
9
72
I/O7
VSSQ
10
71
VSSQ
VDDQ
11
70
VDDQ
I/O11
12
69
I/O6
I/O12
13
68
I/O5
VDD
14
67
VSS
VDD
15
66
VDD
VDD
16
65
VDD
VSS
17
64
ZZ
I/O13
18
63
I/O4
I/O14
19
62
I/O3
VDDQ
20
61
VDDQ
VSSQ
21
60
VSSQ
I/O15
22
59
I/O2
I/O16
23
58
I/O1
I/OP2, NC
24
57
NC
NC
25
56
NC
VSSQ
26
55
VSSQ
VDDQ
27
54
VDDQ
NC
28
53
NC
NC
29
52
NC
NC
30
51
NC
4
Data Sheet M15562EJ3V0DS
A16
A15
A14
A13
A12
A11
NC
Remark Refer to Package Drawing for the 1-pin index mark.
A10
NC
VDD
VSS
NC
NC
A0
A1
A2
A3
A4
A5
MODE
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
µPD4481162, 4481182, 4481322, 4481362
Pin Identifications
[µPD4481162GF, µPD4481182GF]
Symbol
A0 to A18
Pin No.
37, 36, 35, 34, 33, 32, 100, 99, 82, 81,
Description
Synchronous Address Input
44, 45, 46, 47, 48, 49, 50, 83, 80
I/O1 to I/O16
58, 59, 62, 63, 68, 69, 72, 73, 8, 9, 12, 13, Synchronous Data In,
18, 19, 22, 23
Synchronous / Asynchronous Data Out
I/OP1, NC
Note
74
Synchronous Data In (Parity),
I/OP2, NC
Note
24
Synchronous / Asynchronous Data Out (Parity)
ADV
85
Synchronous Address Load / Advance Input
/CE, CE2, /CE2
98, 97, 92
Synchronous Chip Enable Input
/WE
88
Synchronous Write Enable Input
/BW1, /BW2
93, 94
Synchronous Byte Write Enable Input
/G
86
Asynchronous Output Enable Input
CLK
89
Clock Input
/CKE
87
Synchronous Clock Enable Input
MODE
31
Asynchronous Burst Sequence Select Input
Have to tied to VDD or VSS during normal operation
ZZ
64
Asynchronous Power Down State Input
VDD
14, 15, 16, 41, 65, 66, 91
Power Supply
VSS
17, 40, 67, 90
Ground
VDDQ
4, 11, 20, 27, 54, 61, 70, 77
Output Buffer Power Supply
VSSQ
5, 10, 21, 26, 55, 60, 71, 76
Output Buffer Ground
NC
1, 2, 3, 6, 7, 25, 28, 29, 30, 38, 39, 42, 43, No Connection
51, 52, 53, 56, 57, 75, 78, 79, 84, 95, 96
Note NC (No Connection) is used in the µPD4481162GF.
I/OP1 and I/OP2 are used in the µPD4481182GF.
Data Sheet M15562EJ3V0DS
5
µPD4481162, 4481182, 4481322, 4481362
100-pin PLASTIC LQFP (14 × 20)
[µPD4481322GF, µPD4481362GF]
A9
A8
A17
NC
ADV
/G
/CKE
/WE
CLK
VSS
VDD
/CE2
/BW1
/BW2
/BW3
/BW4
CE2
/CE
A7
A6
Marking Side
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
I/OP3, NC
1
80
I/OP2, NC
I/O17
2
79
I/O16
I/O18
3
78
I/O15
VDDQ
4
77
VDDQ
VSSQ
5
76
VSSQ
I/O19
6
75
I/O14
I/O20
7
74
I/O13
I/O21
8
73
I/O12
I/O22
9
72
I/O11
VSSQ
10
71
VSSQ
VDDQ
11
70
VDDQ
I/O23
12
69
I/O10
I/O24
13
68
I/O9
VDD
14
67
VSS
VDD
15
66
VDD
VDD
16
65
VDD
VSS
17
64
ZZ
I/O25
18
63
I/O8
I/O26
19
62
I/O7
VDDQ
20
61
VDDQ
VSSQ
21
60
VSSQ
I/O27
22
59
I/O6
I/O28
23
58
I/O5
I/O29
24
57
I/O4
I/O30
25
56
I/O3
VSSQ
26
55
VSSQ
VDDQ
27
54
VDDQ
I/O31
28
53
I/O2
I/O32
29
52
I/O1
I/OP4, NC
30
51
I/OP1, NC
6
Data Sheet M15562EJ3V0DS
A16
A15
A14
A13
A12
A11
NC
Remark Refer to Package Drawing for the 1-pin index mark.
A10
NC
VDD
VSS
NC
NC
A0
A1
A2
A3
A4
A5
MODE
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
µPD4481162, 4481182, 4481322, 4481362
[µPD4481322GF, µPD4481362GF]
Symbol
A0 to A17
Pin No.
Description
37, 36, 35, 34, 33, 32, 100, 99, 82, 81, 44, Synchronous Address Input
45, 46, 47, 48, 49, 50, 83
I/O1 to I/O32
52, 53, 56, 57, 58, 59, 62, 63, 68, 69, 72,
Synchronous Data In,
73, 74, 75, 78, 79, 2, 3, 6, 7, 8, 9, 12, 13,
Synchronous / Asynchronous Data Out
18, 19, 22, 23, 24, 25, 28, 29
I/OP1, NC
Note
51
Synchronous Data In (Parity),
I/OP2, NC
Note
80
Synchronous / Asynchronous Data Out (Parity)
I/OP3, NC
Note
1
I/OP4, NC
Note
30
ADV
85
Synchronous Address Load / Advance Input
/CE, CE2, /CE2
98, 97, 92
Synchronous Chip Enable Input
/WE
88
Synchronous Write Enable Input
/BW1 to /BW4
93, 94, 95, 96
Synchronous Byte Write Enable Input
/G
86
Asynchronous Output Enable Input
CLK
89
Clock Input
/CKE
87
Synchronous Clock Enable Input
MODE
31
Asynchronous Burst Sequence Select Input
Have to tied to VDD or VSS during normal operation
ZZ
64
Asynchronous Power Down State Input
VDD
14, 15, 16, 41, 65, 66, 91
Power Supply
VSS
17, 40, 67, 90
Ground
VDDQ
4, 11, 20, 27, 54, 61, 70, 77
Output Buffer Power Supply
VSSQ
5, 10, 21, 26, 55, 60, 71, 76
Output Buffer Ground
NC
38, 39, 42, 43, 84
No Connection
Note NC (No Connection) is used in the µPD4481322GF.
I/OP1 to I/OP4 are used in the µPD4481362GF.
Data Sheet M15562EJ3V0DS
7
µPD4481162, 4481182, 4481322, 4481362
Block Diagrams
[µPD4481162, µPD4481182]
A0 to A18
19
Address
register 0
MODE
CLK
17
A1
A0
Burst
logic
ADV
K
K
19
A1’
A0’
/CKE
19
Write address
register 1
Write address
register 0
19
16/18
16/18
Output buffers
/WE
1,024 rows
512 x 16 columns
(8,388,608 bits)
512 x 18 columns
(9,437,184 bits)
Data steering
Write
drivers
Output registers
Write registry and
data coherency
control logic
Sense amplifiers
Memory Cell Array
ADV
/BW1
/BW2
I/O1 to I/O16
I/OP1, I/OP2
E
E
16/18
16/18
16/18
Input
register 1E
Input
register 0E
Read
logic
/G
/CE
CE2
/CE2
ZZ
Power down control
Burst Sequence
[µPD4481162, µPD4481182]
Interleaved Burst Sequence Table (MODE = VDD)
External Address
A18 to A2, A1, A0
1st Burst Address
A18 to A2, A1, /A0
2nd Burst Address
A18 to A2, /A1, A0
3rd Burst Address
A18 to A2, /A1, /A0
Linear Burst Sequence Table (MODE = VSS)
External Address
A18 to A2, 0, 0
A18 to A2, 0, 1
A18 to A2, 1, 0
A18 to A2, 1, 1
1st Burst Address
A18 to A2, 0, 1
A18 to A2, 1, 0
A18 to A2, 1, 1
A18 to A2, 0, 0
2nd Burst Address
A18 to A2, 1, 0
A18 to A2, 1, 1
A18 to A2, 0, 0
A18 to A2, 0, 1
3rd Burst Address
A18 to A2, 1, 1
A18 to A2, 0, 0
A18 to A2, 0, 1
A18 to A2, 1, 0
8
Data Sheet M15562EJ3V0DS
µPD4481162, 4481182, 4481322, 4481362
[µPD4481322, µPD4481362]
A0 to A17
18
Address
register 0
MODE
CLK
16
A1
A0
Burst
logic
ADV
K
K
18
A1’
A0’
/CKE
18
Write address
register 1
Write address
register 0
18
32/36
32/36
Output buffers
1,024 rows
256 x 32 columns
(8,388,608 bits)
256 x 36 columns
(9,437,184 bits)
Data steering
Write
drivers
Output registers
Write registry and
data coherency
control logic
Sense amplifiers
Memory Cell Array
ADV
/BW1
/BW2
/BW3
/BW4
/WE
I/O1 to I/O32
I/OP1 to I/OP4
E
E
32/36
32/36
32/36
Input
register 1E
Input
register 0E
Read
logic
/G
/CE
CE2
/CE2
ZZ
Power down control
[µPD4481322, µPD4481362]
Interleaved Burst Sequence Table (MODE = VDD)
External Address
A17 to A2, A1, A0
1st Burst Address
A17 to A2, A1, /A0
2nd Burst Address
A17 to A2, /A1, A0
3rd Burst Address
A17 to A2, /A1, /A0
Linear Burst Sequence Table (MODE = VSS)
External Address
A17 to A2, 0, 0
A17 to A2, 0, 1
A17 to A2, 1, 0
A17 to A2, 1, 1
1st Burst Address
A17 to A2, 0, 1
A17 to A2, 1, 0
A17 to A2, 1, 1
A17 to A2, 0, 0
2nd Burst Address
A17 to A2, 1, 0
A17 to A2, 1, 1
A17 to A2, 0, 0
A17 to A2, 0, 1
3rd Burst Address
A17 to A2, 1, 1
A17 to A2, 0, 0
A17 to A2, 0, 1
A17 to A2, 1, 0
Data Sheet M15562EJ3V0DS
9
µPD4481162, 4481182, 4481322, 4481362
State Diagram
DS
BURST
DS
DS
DESELECT
WRITE
READ
DS
DS
WRITE
BEGIN
READ
READ
READ
READ
BURST
BURST
WRITE
BURST
BEGIN
WRITE
WRITE
READ
BURST
READ
BURST
WRITE
Command
Operation
DS
Deselect
Read
New Read
Write
New Write
Burst
Burst Read, Burst Write or Continue Deselect
WRITE
BURST
Remarks 1. States change on the rising edge of the clock.
2. A Stall or Ignore Clock Edge cycle is not shown in the above diagram. This is because /CKE HIGH only
blocks the clock (CLK) input and does not change the state of the device.
10
Data Sheet M15562EJ3V0DS
µPD4481162, 4481182, 4481322, 4481362
Asynchronous Truth Table
Operation
/G
I/O
Read Cycle
L
Dout
Read Cycle
H
High-Z
Write Cycle
×
High-Z, Din
Deselected
×
High-Z
Remark × : don’t care
Synchronous Truth Table
Operation
/CE
CE2
/CE2
ADV
/WE
/BWs
/CKE
CLK
I/O
Address
Note
Deselected
H
×
×
L
×
×
L
L→H
High-Z
None
1
Deselected
×
L
×
L
×
×
L
L→H
High-Z
None
1
Deselected
×
×
H
L
×
×
L
L→H
High-Z
None
1
Continue Deselected
×
×
×
H
×
×
L
L→H
High-Z
None
1
Read Cycle / Begin Burst
L
H
L
L
H
×
L
L→H
Dout
External
Read Cycle / Continue Burst
×
×
×
H
×
×
L
L→H
Dout
Next
Write Cycle / Begin Burst
L
H
L
L
L
L
L
L→H
Din
External
Write Cycle / Continue Burst
×
×
×
H
×
L
L
L→H
Din
Next
Write Cycle / Write Abort
L
H
L
L
L
H
L
L→H
High-Z
External
Write Cycle / Write Abort
×
×
×
H
×
H
L
L→H
High-Z
Next
Stall / Ignore Clock Edge
×
×
×
×
×
×
H
L→H
−
Current
Notes
2
1. Deselect status is held until new “Begin Burst” entry.
2. If an Ignore Clock Edge command occurs during a read operation, the I/O bus will remain active (low
impedance). If it occurs during a write cycle, the bus will remain high impedance. No write operation will
be performed during the Ignore Clock Edge cycle.
Remarks 1. × : don’t care
2. /BWs = L means any one or more byte write enables (/BW1, /BW2, /BW3 or /BW4) are LOW.
/BWs = H means all byte write enables (/BW1, /BW2, /BW3 or /BW4) are HIGH.
Data Sheet M15562EJ3V0DS
11
µPD4481162, 4481182, 4481322, 4481362
Partial Truth Table for Write Enables
[µPD4481162, µPD4481182]
Operation
/WE
/BW1
/BW2
Read Cycle
H
×
×
Write Cycle / Byte 1 (I/O [1:8], I/OP1)
L
L
H
Write Cycle / Byte 2 (I/O [9:16], I/OP2)
L
H
L
Write Cycle / All Bytes
L
L
L
Write Abort / NOP
L
H
H
/WE
/BW1
/BW2
/BW3
/BW4
Read Cycle
H
×
×
×
×
Write Cycle / Byte 1 (I/O [1:8], I/OP1)
L
L
H
H
H
Write Cycle / Byte 2 (I/O [9:16], I/OP2)
L
H
L
H
H
Write Cycle / Byte 3 (I/O [17:24], I/OP3)
L
H
H
L
H
Write Cycle / Byte 4 (I/O [25:32], I/OP4)
L
H
H
H
L
Write Cycle / All Bytes
L
L
L
L
L
Write Abort / NOP
L
H
H
H
H
Remark × : don’t care
[µPD4481322, µPD4481362]
Operation
Remark × : don’t care
ZZ (Sleep) Truth Table
12
ZZ
Chip Status
≤ 0.2 V
Active
Open
Active
≥ VDD − 0.2 V
Sleep
Data Sheet M15562EJ3V0DS
µPD4481162, 4481182, 4481322, 4481362
Electrical Specifications
Absolute Maximum Ratings
Parameter
Supply voltage
Symbol
Conditions
VDD
-A44, -A50, -A60, -A75
MIN.
TYP.
MAX.
Unit
–0.5
+4.0
V
–0.5
+3.0
-A44Y, -A50Y, -A60Y, -A75Y
-C60, -C75
-C60Y, -C75Y
Output supply voltage
VDDQ
–0.5
VDD
V
VIN
–0.5 Note
VDD + 0.5
V
Input / Output voltage
VI/O
Note
VDDQ + 0.5
V
Operating ambient
TA
70
°C
Input voltage
temperature
–0.5
-A44, -A50, -A60, -A75, -C60, -C75
-A44Y, -A50Y, -A60Y, -A75Y, -C60Y, -C75Y
Storage temperature
Tstg
0
–40
+85
–55
+125
°C
Note –2.0 V (MIN.) (Pulse width : 2 ns)
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions
Parameter
Symbol
(1/2)
Conditions
-A44, -A50, -A60, -A75
Unit
-A44Y, -A50Y, -A60Y, -A75Y
Supply voltage
MIN.
TYP.
MAX.
VDD
3.135
3.3
3.465
V
VDDQ
2.375
2.5
2.9
V
VIH
1.7
VDDQ + 0.3
V
+0.7
V
3.465
V
VDDQ + 0.3
V
+0.8
V
2.5 V LVTTL Interface
Output supply voltage
High level input voltage
Low level input voltage
VIL
–0.3
Note
3.3 V LVTTL Interface
Output supply voltage
High level input voltage
Low level input voltage
VDDQ
3.135
VIH
2.0
VIL
–0.3
3.3
Note
Note –0.8 V (MIN.) (Pulse width : 2 ns)
Recommended DC Operating Conditions
Parameter
Symbol
(2/2)
Conditions
-C60, -C75
Unit
-C60Y, -C75Y
Supply voltage
Output supply voltage
MIN.
TYP.
MAX.
VDD
2.375
2.5
2.625
V
VDDQ
2.375
2.5
2.625
V
High level input voltage
VIH
1.7
VDDQ + 0.3
V
Low level input voltage
VIL
–0.3 Note
+0.7
V
Note –0.8 V (MIN.) (Pulse width : 2 ns)
Data Sheet M15562EJ3V0DS
13
µPD4481162, 4481182, 4481322, 4481362
DC Characteristics (VDD = 3.3 ± 0.165 V or 2.5 ± 0.125 V)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input leakage current
ILI
VIN (except ZZ, MODE) = 0 V to VDD
–2
+2
µA
I/O leakage current
ILO
VI/O = 0 V to VDDQ, Outputs are disabled.
–2
+2
µA
Operating supply current
IDD
Device selected,
-A44
440
mA
Cycle = MAX.
-A44Y
VIN ≤ VIL or VIN ≥ VIH,
-A50
II/O = 0 mA
-A50Y
400
-A60, -C60
320
-A60Y, -C60Y
-A75, -C75
300
-A75Y, -C75Y
Standby supply current
ISB
Device deselected, Cycle = 0 MHz,
30
mA
VIN ≤ VIL or VIN ≥ VIH, All inputs are static.
ISB1
Device deselected, Cycle = 0 MHz,
15
VIN ≤ 0.2 V or VIN ≥ VDD – 0.2 V,
VI/O ≤ 0.2 V, All inputs are static.
ISB2
Device deselected, Cycle = MAX.
130
VIN ≤ VIL or VIN ≥ VIH
Power down supply current
ISBZZ
ZZ ≥ VDD – 0.2 V, VI/O ≤ VDDQ + 0.2 V
VOH
IOH = –2.0 mA
1.7
IOH = –1.0 mA
2.1
15
mA
2.5 V LVTTL Interface
High level output voltage
Low level output voltage
VOL
V
IOL = +2.0 mA
0.7
IOL = +1.0 mA
0.4
V
3.3 V LVTTL Interface
High level output voltage
VOH
IOH = –4.0 mA
Low level output voltage
VOL
IOL = +8.0 mA
2.4
V
0.4
V
MAX.
Unit
Capacitance (TA = 25 °C, f = 1MHz)
Parameter
Symbol
Test condition
MIN.
TYP.
Input capacitance
CIN
VIN = 0 V
6.0
pF
Input / Output capacitance
CI/O
VI/O = 0 V
8.0
pF
Clock input capacitance
Cclk
Vclk = 0 V
6.0
pF
Remark These parameters are periodically sampled and not 100% tested.
14
Data Sheet M15562EJ3V0DS
µPD4481162, 4481182, 4481322, 4481362
AC Characteristics (VDD = 3.3 ± 0.165 V or 2.5 ± 0.125 V)
AC Test Conditions
2.5 V LVTTL Interface
Input waveform (Rise / Fall time ≤ 2.4 ns)
2.4 V
1.2 V
Test points
1.2 V
1.2 V
Test points
1.2 V
VSS
Output waveform
3.3 V LVTTL Interface
Input waveform (Rise / Fall time ≤ 3.0 ns)
3.0 V
1.5 V
Test points
1.5 V
1.5 V
Test points
1.5 V
VSS
Output waveform
Output load condition
CL : 30 pF
5 pF (TKHQX1, TKHQX2, TGLQX, TGHQZ, TKHQZ)
Figure External load at test
ZO = 50 Ω
I/O (Output)
50 Ω
CL
VT = +1.2 V / +1.5 V
Remark CL includes capacitances of the probe and jig, and stray capacitances.
Data Sheet M15562EJ3V0DS
15
µPD4481162, 4481182, 4481322, 4481362
Read and Write Cycle (2.5 V LVTTL Interface)
Parameter
Symbol
-A44, -A50, -A60, -C60
-A75, -C75
Unit
-A44Y, -A50Y, -A60Y, -C60Y
-A75Y, -C75Y
(167 MHz)
(133 MHz)
Notes
Standard
Alias
MIN.
MAX.
MIN.
MAX.
Cycle time
TKHKH
TCYC
6
–
7.5
–
ns
Clock access time
TKHQV
TCD
–
3.5
–
4.2
ns
Output enable access time
TGLQV
TOE
–
3.5
–
4.2
ns
Clock high to output active
TKHQX1
TDC1
1.5
–
1.5
–
ns
Clock high to output change
TKHQX2
TDC2
1.5
–
1.5
–
ns
Output enable to output active
TGLQX
TOLZ
0
–
0
–
ns
1
Output disable to output High-Z
TGHQZ
TOHZ
0
3.5
0
4.2
ns
1
Clock high to output High-Z
TKHQZ
TCZ
1.5
3.5
1.5
3.5
ns
1, 2
Clock high pulse width
TKHKL
TCH
1.8
–
2.2
–
ns
Clock low pulse width
TKLKH
TCL
1.8
–
2.2
–
ns
Setup times
TAVKH
TAS
1.5
–
1.5
–
ns
0.5
–
0.5
–
ns
Address
Address advance TADVVKH
Hold times
TADVS
Clock enable
TEVKH
TCES
Chip enable
TCVKH
TCSS
Data in
TDVKH
TDS
Write enable
TWVKH
TWS
Address
TKHAX
TAH
Address advance TKHADVX
1, 2
TADVH
Clock enable
TKHEX
TCEH
Chip enable
TKHCX
TCSH
Data in
TKHDX
TDH
Write enable
TKHWX
TWH
Power down entry time
TZZE
TZZE
–
12
–
15
ns
Power down recovery time
TZZR
TZZR
–
12
–
15
ns
Notes 1. Transition is measured ±200 mV from steady state.
2. To avoid bus contention, the output buffers are designed such that TKHQZ (device turn-off) is faster than
TKHQX1 (device turn-on) at a given temperature and voltage. The specs as shown do not imply bus
contention because TKHQX1 is a min. parameter that is worse case at totally different conditions (TA min.,
VDD max.) than TKHQZ, which is a max. parameter (worse case at TA max., VDD min.).
16
Data Sheet M15562EJ3V0DS
µPD4481162, 4481182, 4481322, 4481362
Read and Write Cycle (3.3 V LVTTL Interface)
Parameter
Symbol
-A44
-A50
-A60
-A75
Unit
-A44Y
-A50Y
-A60Y
-A75Y
(225 MHz)
(200 MHz)
(167 MHz)
(133 MHz)
Notes
Standard
Alias
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Cycle time
TKHKH
TCYC
4.4
–
5
–
6
–
7.5
–
ns
Clock access time
TKHQV
TCD
–
2.8
–
3.2
–
3.5
–
4.2
ns
Output enable access time
TGLQV
TOE
–
2.8
–
3.2
–
3.5
–
4.2
ns
Clock high to output active
TKHQX1
TDC1
1.5
–
1.5
–
1.5
–
1.5
–
ns
Clock high to output change
TKHQX2
TDC2
1.5
–
1.5
–
1.5
–
1.5
–
ns
Output enable to output active
TGLQX
TOLZ
0
–
0
–
0
–
0
–
ns
1
Output disable to output High-Z
TGHQZ
TOHZ
0
2.8
0
3.2
0
3.5
0
4.2
ns
1
Clock high to output High-Z
TKHQZ
TCZ
1.5
2.8
1.5
3.2
1.5
3.5
1.5
3.5
ns
1, 2
Clock high pulse width
TKHKL
TCH
1.8
–
1.8
–
1.8
–
2.2
–
ns
Clock low pulse width
TKLKH
TCL
1.8
–
1.8
–
1.8
–
2.2
–
ns
Setup times
TAVKH
TAS
1.4
–
1.5
–
1.5
–
1.5
–
ns
0.4
–
0.5
–
0.5
–
0.5
–
ns
Address
Address advance TADVVKH
Hold times
TADVS
Clock enable
TEVKH
TCES
Chip enable
TCVKH
TCSS
Data in
TDVKH
TDS
Write enable
TWVKH
TWS
Address
TKHAX
TAH
Address advance TKHADVX
1, 2
TADVH
Clock enable
TKHEX
TCEH
Chip enable
TKHCX
TCSH
Data in
TKHDX
TDH
Write enable
TKHWX
TWH
Power down entry time
TZZE
TZZE
–
8.8
–
10
–
12
–
15
ns
Power down recovery time
TZZR
TZZR
–
8.8
–
10
–
12
–
15
ns
Notes 1. Transition is measured ±200 mV from steady state.
2. To avoid bus contention, the output buffers are designed such that TKHQZ (device turn-off) is faster than
TKHQX1 (device turn-on) at a given temperature and voltage. The specs as shown do not imply bus
contention because TKHQX1 is a min. parameter that is worse case at totally different conditions (TA min.,
VDD max.) than TKHQZ, which is a max. parameter (worse case at TA max., VDD min.).
Data Sheet M15562EJ3V0DS
17
µPD4481162, 4481182, 4481322, 4481362
READ / WRITE CYCLE
2 TKHKH 3
1
4
5
6
A3
A4
D (A2)
D (A2+1)
7
8
A5
A6
9
10
CLK
TEVKH
TKHEX
TCVKH
TKHCX
TKHKL TKLKH
/CKE
/CEs
Note 1
TADVVKH TKHADVX
ADV
TWVKH TKHWX
/WE
TWVKH TKHWX
/BWs Note 2
Address
A1
TAVKH
Data In
A2
TKHAX
High-Z
D (A1)
TDVKH
TKHDX
High-Z
TKHQX1
TKHQX2
High-Z
Data Out
A7
Q (A3)
TKHQV
D (A5)
High-Z
TGLQV TKHQZ
Q (A4)
Q (A4+1)
High-Z
Q (A6)
TKHQX2
TGHQZ
TGLQX
/G
Command
WRITE
D (A1)
WRITE
D (A2)
BURST
WRITE
D (A2+1)
READ
Q (A3)
READ
Q (A4)
BURST
READ
Q (A4+1)
WRITE
D (A5)
READ
Q (A6)
WRITE
Q (A7)
DESELECT
Notes 1. /CEs refers to /CE, CE2 and /CE2. When /CEs is LOW, /CE and /CE2 are LOW and CE2 is HIGH. When
/CEs is HIGH, /CE and /CE2 are HIGH and CE2 is LOW.
2. /BWs refers to /BW1, /BW2, /BW3 and /BW4. When /BWs is LOW, any one or more byte write enables
(/BW1, /BW2, /BW3 or /BW4) are LOW.
18
Data Sheet M15562EJ3V0DS
µPD4481162, 4481182, 4481322, 4481362
NOP, STALL AND DESELECT CYCLE
1
2
A1
A2
3
4
5
A3
A4
6
7
8
9
10
CLK
/CKE
/CEs
ADV
/WE
/BWs
Address
High-Z
High-Z
D (A1)
Data In
A5
High-Z
D (A4)
TKHQZ
High-Z
Data Out
Q (A2)
High-Z
Q (A3)
Q (A5)
TKHQX2
Command
WRITE
D (A1)
READ
Q (A2)
STALL
READ
Q (A3)
WRITE
D (A4)
STALL
Data Sheet M15562EJ3V0DS
NOP
READ
Q (A5)
DESELECT
CONTINUE
DESELECT
19
µPD4481162, 4481182, 4481322, 4481362
POWER DOWN (ZZ) CYCLE
1
2
TKHKH
3
4
5
6
7
8
9
10
11
12
CLK
TKHKL TKLKH
/CKE
/CEs Note
ADV
/WE Note
/BWs
Address
A1
A2
/G
Data Out
High-Z
High-Z
Q (A1)
Q1 (A2)
ZZ
TZZE
TZZR
Power Down (ISBZZ) State
Note /WE or /CEs must be held HIGH at CLK rising edge (clock edge No.2 and No.3 in this figure) prior to power
down state entry.
20
Data Sheet M15562EJ3V0DS
µPD4481162, 4481182, 4481322, 4481362
Package Drawing
100-PIN PLASTIC LQFP (14x20)
A
B
80
81
51
50
detail of lead end
S
C
D
R
Q
31
30
100
1
F
G
H
I
J
M
K
P
S
N
S
L
M
NOTE
ITEM
Each lead centerline is located within 0.13 mm of
its true position (T.P.) at maximum material condition.
MILLIMETERS
A
22.0±0.2
B
20.0±0.2
C
14.0±0.2
D
16.0±0.2
F
0.825
G
0.575
H
0.32 +0.08
−0.07
I
J
0.13
0.65 (T.P.)
K
1.0±0.2
L
0.5±0.2
M
0.17 +0.06
−0.05
N
0.10
P
1.4
Q
0.125±0.075
R
3° +7°
−3°
S
1.7 MAX.
S100GF-65-8ET-1
Data Sheet M15562EJ3V0DS
21
µPD4481162, 4481182, 4481322, 4481362
Recommended Soldering Condition
Please consult with our sales offices for soldering conditions of the µPD4481162, 4481182, 4481322 and 4481362.
Types of Surface Mount Devices
µPD4481162GF
: 100-pin PLASTIC LQFP (14 x 20)
µPD4481182GF
: 100-pin PLASTIC LQFP (14 x 20)
µPD4481322GF
: 100-pin PLASTIC LQFP (14 x 20)
µPD4481362GF
: 100-pin PLASTIC LQFP (14 x 20)
22
Data Sheet M15562EJ3V0DS
µPD4481162, 4481182, 4481322, 4481362
Revision History
Edition/
Date
3rd edition/
Dec. 2002
Page
Type of
This
Previous
edition
edition
Throughout
Throughout
Location
Description
(Previous edition → This edition)
revision
Modification
−
Preliminary Data Sheet → Data Sheet
Addition
−
Extended operating temperature products
(TA = −40 to +85 °C)
Data Sheet M15562EJ3V0DS
23
µPD4481162, 4481182, 4481322, 4481362
[MEMO]
24
Data Sheet M15562EJ3V0DS
µPD4481162, 4481182, 4481322, 4481362
[MEMO]
Data Sheet M15562EJ3V0DS
25
µPD4481162, 4481182, 4481322, 4481362
[MEMO]
26
Data Sheet M15562EJ3V0DS
µPD4481162, 4481182, 4481322, 4481362
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
Data Sheet M15562EJ3V0DS
27
µPD4481162, 4481182, 4481322, 4481362
ZEROSB is a trademark of NEC Electronics Corporation.
• The information in this document is current as of December, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
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M8E 02. 11-1