NTE108 Silicon NPN Transistor High Frequency Amplifier Description: The NTE108 is a silicon NPN transistor in a TO92 type case designed for low–noise, high–frequency amplifiers, 1GHz local oscillatore, non–neutralized IF amplifiers, and non–saturating circuits with rise and fall times less than 2.5ns. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +83.3°C/W Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . +200°C/W Note 1. RΘJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 3mA, IB = 0, Note 2 15 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 1µA, IE = 0 30 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 3 – – V – – 10 nA Collector Cutoff Current ICBO VCB = 15V, IE = 0 Note 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 1%. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain hFE IC = 3mA, VCE = 1V, Note 2 20 – – IC = 8mA, VCE = 10V, Note 2 20 – 200 Collector–Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 1mA – – 0.4 V Base–Emitter Saturation Voltage VBE(sat) IC = 10mA, IB = 1mA – – 1.0 V fT IC = 4mA, VCE = 10V, f = 100MHz, Note 2 600 – – MHz VCB = 0V, IE = 0, f = 140kHz – – 3.0 pF VCB = 10V, IE = 0, f = 140kHz – – 1.7 pF Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance Cobo Input Capacitance Cibo VEB = 0.5V, IC = 0, f = 140kHz – – 2.0 pF Noise Figure NF IC = 1mA, VCE = 6V, RS = 400Ω, f = 60MHz – – 6 dB Common–Emitter Amplifier Power Gain Gpe IC = 6mA, VCB = 12V, f = 200MHz (Gfd + Gre < –20dB) 15 – – dB Power Output Pout IC = 8mA, VCB = 15V, f = 500MHz 30 – – mW IC = 8mA, VCB = 15V, Pout = 30mW, f = 500MHz 25 – – % Functional Test Oscillator Collector Efficiency η Note 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 1%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max