NTE NTE24

NTE24 (NPN) & NTE25 (PNP)
Silicon Complementary Transistors
General Purpose Amplifier, Switch
Description:
The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package
designed for general purpose medium power amplifier and switching circuits that require collector currents to 1A.
Features:
D High Collector–Emitter Breakdown Voltage: VCEO = 80V
D Exceptional Power Dissipation Capability
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Power Dissipation, PD
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850mW
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Junction Temperature, TJ(max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector–Emitter Breakdown Voltage
Symbol
Test Conditions
V(BR)CEO IC = 10mA, IB = 0
Min
Typ
Max
Unit
80
–
–
V
Collector Cutoff Current
ICBO
VCB = 100V, IE = 0
–
–
0.1
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
100
nA
DC Current Gain
hFE
VCE = 2V, IC = 50mA
40
–
–
VCE = 2V, IC = 250mA
40
–
–
VCE = 2V, IC = 500mA
25
–
–
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
VCE(sat)
VBE(on)
Current Gain Bandwidth Product
fT
Output Capacitance
Cob
Test Conditions
Min
Typ
Max
Unit
IC = 500mA, IB = 50mA
–
–
0.5
V
IC = 1000mA, IB = 100mA
–
–
1.5
V
VCE = 2V, IC = 1000mA
–
–
0.5
V
VCE = 5V, IC = 200mA, f = 100MHz
50
–
–
MHz
VCB = 10V, IE = 0, f = 1MHz
–
–
30
pF
.200 (5.08)
.180 (4.57)
.100 (2.54)
E C B
.180
(4.57)
.594
(15.09)
.018 (0.46)
.015 (0.38)
3.050 (1.27)
.050 (1.27)
.050 (1.27)
.140
(3.55)
.090 (2.28) R