NTE NTE210

NTE210 (NPN) & NTE211 (PNP)
Silicon Complementary Transistors
General Purpose Output & Driver
Description:
The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications
such as series, shunt and switching regulators, and low and high frequency inverters and converters.
Features:
D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Power Dissipation (TA = +25°C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +260°C
Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20°C/W
Note 1. Pulse Test: Pulse Width ≤ 300µs.
Note 2. The actual power dissipation capability of the TO202 type package is 2W @ TA = +25°C.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
75
–
–
V
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, IB = 0
Collector Cutoff Current
ICES
VCE = 90V
–
–
100
nA
Emitter Cutoff Current
IEBO
VEB = 5V
–
–
100
nA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
IC = 100mA, VCE = 2V
120
–
360
IC = 1A, VCE = 2V
10
–
–
Unit
ON Characteristics (Note 3)
DC Current Gain
hFE
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 500mA, IB = 50mA
–
–
1.0
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 500mA, IB = 50mA
–
–
1.5
V
IC = 20mA, VCE = 10V, f = 20MHz
75
–
375
MHz
VCB = 20V, IE = 0, f = 1MHz
–
–
12
pF
–
–
18
pF
Dynamic Characteristics
Current–Gain Bandwidth Product
fT
Collector–Base Capacitance
NTE210
Ccb
NTE211
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.380 (9.56)
.180 (4.57)
.132 (3.35) Dia
C
.500
(12.7)
.325
(9.52)
1.200
(30.48)
Ref
.070 (1.78) x 45°
Chamf
.300
(7.62)
.050 (1.27)
.400
(10.16)
Min
E
.100 (2.54)
B
C
.100 (2.54)