228A

NTE228A
Silicon NPN Transistor
High Voltage Amp, Video Output
Description:
The NTE228A is a silicon NPN transistor in a TO202M type package designed for high−voltage TV video
and chroma output circuits, high−voltage linear amplifiers, and high−voltage transistor regulators.
Features:
D High Collector−Emitter Breakdown Voltage: V(BR)CEO = 350V (Min) @ IC = 1mA
D Low Collector−Emitter Saturation Voltage: VCE(sat) = 600mV (Max) @ IC = 20mA
D Low Collector−Emitter Capacitance: Ccb = 3pF (Max) @ VCB = 30V
D 2 Watts Free Air Dissipation @ TA = +25°C
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +250°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0
350
−
−
V
Collector−Base Breakdown Voltage
V(BR)CBO IC = 100μA, IE = 0
450
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 100μA, IC = 0
6
−
−
V
Collector Cutoff Current
ICBO
VCB = 250V, IE = 0
−
−
0.2
μA
Emitter Cutoff Current
IEBO
VBE = 5V, IC = 0
−
−
0.1
μA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
IC = 1mA, VCE = 10V
25
−
−
IC = 30mA, VCE = 10V
40
−
180
IC = 30mA, IB = 3mA
−
−
0.6
V
IC = 50mA, IB = 5mA
−
−
1.5
V
IC = 30mA
−
−
0.85
V
IC = 10mA, VE = 20V, f = 20MHz
45
−
200
MHz
VCB = 20V, IE = 0, f = 1MHz
−
−
3
pF
ON Characteristics (Note 1)
DC Current Gain
hFE
Collector−Emitter Saturation Voltage
Base−Emitter ON Voltage
VCE(sat)
VBE(on)
Dynamic Characteristics
Current Gain−Bandwidth Product
fT
Collector−Base Capacitance
Ccb
Note 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
.394 (10.0)
.165 (4.2) Dia
C
.492
(12.5)
.335
(8.5)
.197 (5.0)
.059 (1.5) x 45°
Chamf
.335
(8.5)
.119 (3.0)
.532
(13.5)
E
.098 (2.5)
B
C
.181 (4.6)
.138 (3.5)