NTE230 Silicon Controlled Rectifier (SCR) TV Deflection Circuit Features: D CTV 110° – CRT Horizontal Deflection D Tracer Switch Absolute Maximum Ratings: Repetitive Peak Off–State Voltage (TJ = +100°C), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V Non–Repetitive Peak Forward Voltage (TJ = +100°C), VDSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V RMS On–State Current (Note 1), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Average On–State Current (Note 1), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2A Surge Current (Note 1), ITSM 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A Critical Rate–of–Rise of On–State Current, di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A/µs Peak Gate Power Dissipation (Note 2), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Minimum Peak Reverse Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30V Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4°C/W Note 1. Single Phase, Half Sine Wave at 50Hz, TC = +60°C Note 2. 10µs duration Electrical Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Peak Off–State Current IDRM VDRM = 750V, TJ = +100°C – – 1.5 mA Peak On–State Voltage VTM ITM = 20A, TC = +25°C – – 3.0 V DC Gate Trigger Current IGT TC = –40°C VD = 6V, RL = 10Ω – – 50 mA TC = +25°C – – 30 mA Electrical Characteristics (Cont’d): Parameter Symbol DC Gate Non–Trigger Voltage VGD DC Gate Non–Trigger Current IGD Test Conditions Min Typ Max Unit VD = 750V, TC = +100°C 0.2 – – V VD = 750V, TC = +100°C 1.0 – – mA Holding Current IH VD = 6V, RL = 10Ω – – 100 mA Turn–Off Time tq ITM = 8A, di/dt = 20A/µs, VD = 610V, dv/dt = 700V/µs, f = 15.7kHz, TC = +70°C, VG = 25V – – 2.5 µs 700 – – V/µs Critical Exponential Rate–of–Rise of Forward Blocking State Voltage dv/dt VDRM = 500V, VG = –2.5V, TC = +70°C, RG = 100Ω .295 (7.5) .485 (12.3) Dia .062 (1.57) .031 (0.78) Dia .960 (24.3) .360 (9.14) Min Gate .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max Anode/Case Cathode