NTE NTE230

NTE230
Silicon Controlled Rectifier (SCR)
TV Deflection Circuit
Features:
D CTV 110° – CRT Horizontal Deflection
D Tracer Switch
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TJ = +100°C), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V
Non–Repetitive Peak Forward Voltage (TJ = +100°C), VDSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
RMS On–State Current (Note 1), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Average On–State Current (Note 1), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2A
Surge Current (Note 1), ITSM
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Critical Rate–of–Rise of On–State Current, di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A/µs
Peak Gate Power Dissipation (Note 2), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Minimum Peak Reverse Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4°C/W
Note 1. Single Phase, Half Sine Wave at 50Hz, TC = +60°C
Note 2. 10µs duration
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Peak Off–State Current
IDRM
VDRM = 750V, TJ = +100°C
–
–
1.5
mA
Peak On–State Voltage
VTM
ITM = 20A, TC = +25°C
–
–
3.0
V
DC Gate Trigger Current
IGT
TC = –40°C VD = 6V, RL = 10Ω
–
–
50
mA
TC = +25°C
–
–
30
mA
Electrical Characteristics (Cont’d):
Parameter
Symbol
DC Gate Non–Trigger Voltage
VGD
DC Gate Non–Trigger Current
IGD
Test Conditions
Min
Typ
Max
Unit
VD = 750V, TC = +100°C
0.2
–
–
V
VD = 750V, TC = +100°C
1.0
–
–
mA
Holding Current
IH
VD = 6V, RL = 10Ω
–
–
100
mA
Turn–Off Time
tq
ITM = 8A, di/dt = 20A/µs,
VD = 610V, dv/dt = 700V/µs,
f = 15.7kHz, TC = +70°C, VG = 25V
–
–
2.5
µs
700
–
–
V/µs
Critical Exponential
Rate–of–Rise of Forward
Blocking State Voltage
dv/dt
VDRM = 500V, VG = –2.5V,
TC = +70°C, RG = 100Ω
.295 (7.5)
.485 (12.3)
Dia
.062 (1.57)
.031 (0.78) Dia
.960 (24.3)
.360
(9.14)
Min
Gate
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.200
(5.08)
.145 (3.7) R Max
Anode/Case
Cathode