NTE2315 Silicon NPN Transistor Fast Switching Power Darlington Description: The NTE2315 is a silicon epitaxial planer NPN power Darlington transistor in a TO220 type package with an integrated base–emitter speed–up diode designed for use in high voltage, high current, fast switching applications. In particular, the NTE2315 can be used in horizontal output stages of 110° CRT video displays and is primarily intended for large screen displays. Absolute Maximum Ratings: Collector–Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector–Emitter Voltage (VBE = –6V), VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Damper Diode Peak Forward Current, IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Total Power Dissipation (TC ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperatuere Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.08°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ICES VCE = 400V, VBE = 0 – – 100 µA ICEV VCE = 400V, VBE = –6V – – 100 µA IEBO VEB = 6V, IC = 0 – – 3 mA Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1 200 – – V Collector–Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 50mA, Note 1 – – –1.5 V Base–Emitter Saturation Voltage VBE(sat) IC = 5A, IB = 50mA, Note 1 – – 2.0 V IC = 3A, VCE = 5V – 3500 – Collector Cutoff Current Emitter Cutoff Current DC Current Gain hFE Note 1. Pulse test: Pulse Duration = 300µs, Duty Cycle = 1.5%. Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Damper Diode Forward Voltage VF IF = 4A, Note 1 – – 2 V Turn–Off Time toff IC = 5A, IB1 = 50mA – 0.4 1.0 µs Turn–On Time ton – 0.35 – µs Storage Time ts IC = 5A, IB1 = 50mA, IB2 = –500mA, VCC = 100V – 0.55 – µs Fall Time tf – 0.20 – µs Resistive Load Note 1. Pulse test: Pulse Duration = 300µs, Duty Cycle = 1.5%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max C B D2 R1 .250 (6.35) Max D1 R2 .500 (12.7) Min E .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab