isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6833 DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ww Collector-Emitter Voltage VCEO(SUS) Collector-Emitter Voltage VEBO s c s .i PARAMETER VCEV w Emitter-Base Voltage n c . i m e VALUE UNIT 850 V 450 V 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 4 A IBM Base Current-Peak 8 A PC Collector Power Dissipation@TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6833 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.4A IC= 3A; IB= 0.4A,TC=100℃ 2.5 2.5 V Base-Emitter Saturation Voltage IC= 3A; IB= 0.4A IC= 3A; IB= 0.4A,TC=100℃ 1.5 1.5 V ICEV Collector Cutoff Current VCEV= 850V;VBE(off)= 1.5V VCEV= 850V;VBE(off)= 1.5V;TC=100℃ 0.25 1.5 mA ICER Collector Cutoff Current VCE= 850V; RBE= 50Ω,TC= 100℃ 2.5 mA IEBO Emitter Cutoff Current VEB= 6.0V; IC=0 1.0 mA hFE-1 DC Current Gain hFE-2 DC Current Gain VBE(sat) fT COB CONDITIONS Output Capacitance TYP. MAX 450 UNIT V n c . i m e s c s .i w w w Current Gain-Bandwidth Product MIN IC= 3A ; VCE= 5V 7.5 30 IC= 5A ; VCE= 5V 5 IC= 0.25A ;VCE= 10V; ftest=10MHz 15 75 MHz IE= 0; VCB= 10V; ftest=1.0kHz 20 200 pF 0.03 0.1 μs 0.1 0.3 μs 1.0 3.0 μs 0.06 0.3 μs Switching times;Resistive Load td Delay Time tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 3A , VCC= 250V; IB1= 0.4A; IB2= -0.8A; PW = 30μs; RB2= 8Ω Duty Cycle≤2.0% 2