NTE NTE2387

NTE2387
MOSFET
N–Channel Enhancement Mode,
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Drain–Gate Voltage (RGS = 20kΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Pulsed Drain Current, IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Continuous Drain Current, ID
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Total Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
800
–
–
V
VGS = 0, VDS = 800V, TC = +25°C
–
2
20
µA
VGS = 0, VDS = 800V, TC = +125°C
–
0.1
1.0
mA
IGSS
VDS = 0, VGS = ±30V
–
10
100
nA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 1mA
2.1
3.0
4.0
V
Static Drain–Source On Resistance
RDS(on)
VGS = 10V, ID = 1.5A
–
2.7
3.0
Ω
Forward Transconductance
gfs
VDS = 25V, ID = 1.5A
3.0
4.3
–
mho
Input Capactiance
Ciss
VDS = 25V, VGS = 0, f = 1MHz
–
1000
1250
pf
Output Capacitance
Coss
–
80
120
pf
Reverse Transfer Capactiance
Crss
–
30
50
pf
Turn–On Time
td(on)
–
10
25
ns
–
25
40
ns
td(off)
–
130
150
ns
tf
–
40
60
ns
Static Characteristics
Drain–Source Breakdown Voltage
V(BR)DSS
Zero–Gate Voltage Drain Current
IDSS
Gate–Body Leakage Current
ID = 250µA, VGS = 0
Dynamic Characteristics
Rise Time
Turn–Off Delay Time
Fall Time
tr
VDD = 30V, ID = 2.3A, VGS = 10V,
RGS = 50Ω,
Ω Rgen = 50Ω
Ω
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
LD
Measured from contact screw on tab
to center of die
–
3.5
–
nH
Measured from drain lead 6mm from
package to center of die
–
4.5
–
nH
Measured from the source lead
6mm from package to source
bonding pad
–
7.5
–
nH
IDR
–
–
4
A
Pulsed Reverse Drain Current
IDRM
–
–
16
A
Diode Forward Voltage
VSD
IF = 4A, VGS = 0
–
1.0
1.3
V
Reverse Recovery Time
trr
–
1800
–
ns
Reverse Recovered Charge
Qrr
IF = 4A, diF/dt = 100A/µs, VGS = 0,
VR = 100V
–
12
–
µC
Dynamic Characteristics (Cont’d)
Internal Drain Inductance
Internal Source Inductance
LS
Source–Drain Diode Ratings and Characteristics
Continuous Reverse Drain Current
.420 (10.67)
Max
.110 (2.79)
.147 (3.75) Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
.100 (2.54)
Source
Drain/Tab