NTE NTE2390

NTE2390
MOSFET
N–Channel Enhancement Mode,
High Speed Switch
Description:
The NTE2390 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220
type package designed for low voltage, high speed power switching applications such as switching
regulators, converters, solenoid, and relay drivers.
Features:
D Silicon Gate for Fast Switching Speeds
D IDSS, VDC(on), VGS(th), and SOA Specified at Elevated Temperatures.
D Rugged – SOA is Power Dissipation Limited
D Source–to–Drain Diode Characterized for Use With Inductive Loads
Absolute Maximum Ratings:
Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain–Gate Voltage (RGS = 1MΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67°C/W
Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 30°C/W
Maximum Lead Temperature (During soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +275°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
60
–
–
V
VGS = 0, VDS = Max Rating
–
–
0.2
mA
VGS = 0, VDS = 48V, TJ = +125°C
–
–
1.0
mA
OFF Characteristics
Drain–Source Breakdown Voltage
Zero–Gate Voltage Drain Current
V(BR)DSS ID = 0.25mA, VGS = 0
IDSS
Gate–Body Leakage Current, Forward
IGSSF
VDS = 0, VGSF = 20V
–
–
100
nA
Gate–Body Leakage Current, Reverse
IGSSR
VDS = 0, VGSR = 20V
–
–
100
nA
VGS(th)
VDS = VGS, ID = 1mA
2.0
–
4.5
V
VDS = VGS, ID = 1mA, TJ = +100°C
1.5
–
4.0
V
ON Characteristics (Note 1)
Gate Threshold Voltage
Static Drain–Source On Resistance
rDS(on)
VGS = 10V, ID = 6A
–
–
0.2
Ω
Drain–Source ON–Voltage
VDS(on)
VGS = 10V, ID = 12A
–
–
3.0
V
VGS = 10V, ID = 6A, TJ = 100°C
–
–
2.8
V
gfs
VDS = 15V, ID = 6A
4
–
–
mhos
Input Capactiance
Ciss
–
–
400
pf
Output Capacitance
Coss
VDS = 25V, VGS = 0,
f = 1MHz
–
–
300
pf
Reverse Transfer Capactiance
Crss
–
–
100
pf
–
–
60
ns
–
–
160
ns
td(off)
–
–
80
ns
tf
–
–
110
ns
–
13
26
nC
–
6
–
nC
–
7
–
nC
–
1.8
3.2
V
Forward Transconductance
Dynamic Characteristics
Switching Characteristics (TJ = +100°C, Note 1)
Turn–On Time
Rise Time
Turn–Off Delay Time
Fall Time
td(on)
tr
Total Gate Charge
Qg
Gate–Source Charge
Qgs
Gate–Drain Charge
Qgd
VDD = 25V, ID = 0.5 Rated ID,
Rgen = 50Ω
Ω
VDS = 48V, VGS = 10V,
ID = Rated ID
Source Drain Diode Characteristics (Note 1)
Forward ON Voltage
VSD
IS = Rated ID, VGS = 0
Forward Turn–On Time
ton
Limited by stray inductance
Reverse Recovery Time
trr
–
300
–
ns
Measured from the contact screw
on tab to center of die
–
3.5
–
nH
Measured from the drain lead 0.25”
from package to center of die
–
4.5
–
nH
Measured from the source lead
0.25” from package to source bond
pad
–
7.5
–
nH
Internal Package Inductance
Internal Drain Inductance
Internal Source Inductance
Ld
Ls
Note 1. Pulse test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75) Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
.100 (2.54)
Source
Drain/Tab