J.E.I±E.U 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MTM12N10 *MTP12N10E Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES These TMOS Power FETs are designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. RDS(on) = 0-W OHM 100 VOLTS • Silicon Gata for Fast Switching Speeds — Switching Times Specified at 100°C • Designer's Data — IDSS. Vostonl- vGS(th| and SOA Specified at Elevated Temperature • Rugged — SOA is Power Dissipation Limited • Source-to-Orain Diode Characterized for Use With Inductive Loads MAXIMUM RATINGS Symbol Value Unit Vdc Drain-Gate Voltage (RQS = 1 Mfi) VDSS VDGR 100 100 Vdc Gate-Source Voltage Continuous Non-repetitive (tp * 50 us] VGS VQSM ±20 ±40 Vdc Vpk 12 30 Adc 75 0.6 Watts W7°C -65 to 150 °C Plating Drain-Source Voltage ID IDM PD Drain Current — Continuous — Pulsed Total Power Dissipation @ Tc = 25°C Derate above 25°C Operating and Storage Temperature Range Tj-Tjjtg MTM12N10 TO-204AA THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Junction to Ambient °C/W R0JC TO 204 R0JA TO-220 Maximum Lead Temperature for Soldering TO-220 Purposes, V8" from case for 5 seconds TO-204 1.67 30 62.5 TL 260 °C 300 MTP12N10E TO-220AB NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors ELECTRICAL CHARACTERISTICS ITc - 25°C unless otherwise noted) Ch*r»«tw<*tic Symbol Min Max Unit V(BR)DSS 100 — Vdc — 10 100 OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS - o, ID = 0.25 mA> IDSS Zero Gate Voltage Dram Current (VDS = R*'«d VDSS. VGS = oi (VDS = Rated VDSS- VQS = 0, Tj = 125°C) jiAdc — — 100 nAdc 100 nAdC vGS(tn> 2 1.5 4.5 4 Vdc Static Drain-Source On Resistance (VQS= 10 Vdc, ID = 6 Adc) RDS(on) — 0.18 Dram-Source On-Voltaga (Vrjg = 10 V) (ID = 12Adc) (ID - 6 Adq, Tj = 100°C) vDS(on) — 2.6 2.2 3 — mhos PF Gate-Body Leakage Current, Forward (VQSF = 20 Vdc, VDS " °) 'GSSF Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = °> IGSSR ON CHARACTERISTICS* Gate Threshold Voltage (VDS = VGS. ID = 1 mA) Tj = 100°C Forward Transconduciancs (Vog = 15 V, ID - 6 A) 9FS Ohm Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS ~ 25 v. VGS ~ °' Output Capacitance f - 1 MHzl See Figure 11 Reverse Transfer Capacitance Ciss — 800 CDSS — 400 Crss — 100 td(on) — 50 <r — 150 l d(off) — 200 tf — 100 17 (Typ) 36 _ SWITCHING CHARACTERISTICS* (Tj = 100"C) Turn-On Delay Time Rise Time (VDD = 25 V, ID = O.S Rated ID Turn-Qff Delay Time See Figures 9, 13 and 14 Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge IVos - 0.8 Rated VDSS' ID = Rated ID, VGS = 10 V) See Figure 12 Q9 Q9s 8 (Typ) Ogd 9 (Typl — VSD 1.2 (Typ). 2.5 ns nC SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Voltage Forward Turn-On Time (IS = Rated ID VGS = 0) 'on trr 325 (Typ) Internal Drain Inductance (Measured from the contact screw on the header closer to the source pin and the center of the die) Ld 5 (Typ) Internal Source Inductance (Measured from the source pin, 0 25" from the package to the source bond pad) LS 12.5 (Typ) " 3 5 (Typ) 4 5 (Typl — 7 5 (Typl — Reverse Recovery Time Vdc Limited by stray inductance - | ns INTERNAL PACKAGE INDUCTANCE (TO-204) nH INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the dram lead 0.25" from package to center of die) Ld Internal Source Inductance (Measured from the source lead 0 25" from package to source bond pad.l LS •Pulse Test Pulse Width '. 300 MS, Duty Cycle ', 2% nH