Power Field Effect Transistor

J.E.I±E.U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MTM12N10
*MTP12N10E
Designer's Data Sheet
Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate
TMOS POWER FETs
12 AMPERES
These TMOS Power FETs are designed for medium voltage,
high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
RDS(on) = 0-W OHM
100 VOLTS
• Silicon Gata for Fast Switching Speeds — Switching Times
Specified at 100°C
• Designer's Data — IDSS. Vostonl- vGS(th| and SOA Specified
at Elevated Temperature
• Rugged — SOA is Power Dissipation Limited
• Source-to-Orain Diode Characterized for Use With Inductive Loads
MAXIMUM RATINGS
Symbol
Value
Unit
Vdc
Drain-Gate Voltage (RQS = 1 Mfi)
VDSS
VDGR
100
100
Vdc
Gate-Source Voltage
Continuous
Non-repetitive (tp * 50 us]
VGS
VQSM
±20
±40
Vdc
Vpk
12
30
Adc
75
0.6
Watts
W7°C
-65 to 150
°C
Plating
Drain-Source Voltage
ID
IDM
PD
Drain Current — Continuous
— Pulsed
Total Power Dissipation @ Tc = 25°C
Derate above 25°C
Operating and Storage Temperature Range
Tj-Tjjtg
MTM12N10
TO-204AA
THERMAL CHARACTERISTICS
Thermal Resistance
Junction to Case
Junction to Ambient
°C/W
R0JC
TO 204
R0JA
TO-220
Maximum Lead Temperature for Soldering TO-220
Purposes, V8" from case for 5 seconds TO-204
1.67
30
62.5
TL
260
°C
300
MTP12N10E
TO-220AB
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS ITc - 25°C unless otherwise noted)
Ch*r»«tw<*tic
Symbol
Min
Max
Unit
V(BR)DSS
100
—
Vdc
—
10
100
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS - o, ID = 0.25 mA>
IDSS
Zero Gate Voltage Dram Current
(VDS = R*'«d VDSS. VGS = oi
(VDS = Rated VDSS- VQS = 0, Tj = 125°C)
jiAdc
—
—
100
nAdc
100
nAdC
vGS(tn>
2
1.5
4.5
4
Vdc
Static Drain-Source On Resistance (VQS= 10 Vdc, ID = 6 Adc)
RDS(on)
—
0.18
Dram-Source On-Voltaga (Vrjg = 10 V)
(ID = 12Adc)
(ID - 6 Adq, Tj = 100°C)
vDS(on)
—
2.6
2.2
3
—
mhos
PF
Gate-Body Leakage Current, Forward (VQSF = 20 Vdc, VDS " °)
'GSSF
Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = °>
IGSSR
ON CHARACTERISTICS*
Gate Threshold Voltage
(VDS = VGS. ID = 1 mA)
Tj = 100°C
Forward Transconduciancs (Vog = 15 V, ID - 6 A)
9FS
Ohm
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS ~ 25 v. VGS ~ °'
Output Capacitance
f - 1 MHzl
See Figure 11
Reverse Transfer Capacitance
Ciss
—
800
CDSS
—
400
Crss
—
100
td(on)
—
50
<r
—
150
l d(off)
—
200
tf
—
100
17 (Typ)
36
_
SWITCHING CHARACTERISTICS* (Tj = 100"C)
Turn-On Delay Time
Rise Time
(VDD = 25 V, ID = O.S Rated ID
Turn-Qff Delay Time
See Figures 9, 13 and 14
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
IVos - 0.8 Rated VDSS'
ID = Rated ID, VGS = 10 V)
See Figure 12
Q9
Q9s
8 (Typ)
Ogd
9 (Typl
—
VSD
1.2 (Typ).
2.5
ns
nC
SOURCE DRAIN DIODE CHARACTERISTICS*
Forward On-Voltage
Forward Turn-On Time
(IS = Rated ID
VGS = 0)
'on
trr
325 (Typ)
Internal Drain Inductance
(Measured from the contact screw on the header closer
to the source pin and the center of the die)
Ld
5 (Typ)
Internal Source Inductance
(Measured from the source pin, 0 25" from the package
to the source bond pad)
LS
12.5 (Typ)
"
3 5 (Typ)
4 5 (Typl
—
7 5 (Typl
—
Reverse Recovery Time
Vdc
Limited by stray inductance
-
| ns
INTERNAL PACKAGE INDUCTANCE (TO-204)
nH
INTERNAL PACKAGE INDUCTANCE (TO-220)
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the dram lead 0.25" from package to center of die)
Ld
Internal Source Inductance
(Measured from the source lead 0 25" from package to source bond pad.l
LS
•Pulse Test Pulse Width '. 300 MS, Duty Cycle ', 2%
nH