NTE NTE2506

NTE2506
Silicon NPN Transistor
High Frequency Video Driver
Description:
The NTE2506 is a silicon NPN epitaxial transistor in a TO126 type package designed for use in the
cascode stage of the driver for high–resolution color graphics monitors.
Features:
D High Breakdown Voltage
D Low Output Capacitance
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95V
Collector–Emitter Voltage (RBE = 100Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Power Dissipation (TS ≤ +85°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Soldering Point (TS ≤ +85°C, Note 1), RthJS . . . . . . . . . . 18K/W
Note 1. TS is the temperature at the soldering point of the collector lead.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector–Base Breakdown Voltage
V(BR)CBO IC = 0.1mA
115
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 10mA
95
–
–
V
V(BR)CER IC = 10mA, RBE = 100Ω
110
–
–
V
3
–
–
V
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Transition Frequency
V(BR)EBO IE = 0.1mA
ICES
IB = 0, VCE = 50V
–
–
100
µA
ICBO
IE = 0, VCB = 50V
–
–
20
µA
hFE
IC = 100mA, VCE = 10V, TA = +25°C
20
35
–
fT
IC = 100mA, VCE = 10V, f = 100MHz,
TA = +25°C
0.8
1.2
–
GHz
Collector–Base Capacitance
Ccb
IC = 0, VCB = 10V, f = 1MHz, TA = +25°C
–
2.0
–
pF
Collector Capacitance
Cc
IE = ie = 0, VCB = 10V f = 1MHz
–
3.5
–
pF
.330 (8.38) Max
.175
(4.45)
Max
.450
(11.4)
Max
.118
(3.0)
Dia
.655
(16.6)
Max
.030 (.762) Dia
E
C
B
.090 (2.28)
.130 (3.3)
Max