NTE NTE265

NTE265
Silicon NPN Transistor
Darlington Power Amplifier
Features:
D Forward Current Transfer Ratio: hFE = 10,000 Min
D Power Dissipation: 1.33W Free–Air @ TA = +50°C
D Hard Solder Mountdown
Applications:
D Driver, IC Driver
D Regulator
D Touch Switch
D Audio Output
D Relay Substitute
D Oscillator
D Servo–Amplifier
D Capacitor Multiplier
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–to–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector–to–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–to–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13V
Collector Current (Note 1), IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A
Power Dissipation, PD
TC = +25°C (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25W
TC = +70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W
TA = +50°C
With Tab . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W
Without Tab . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Thermal Resistance, Junction–to–Case (Note 2), RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20°C/W
Thermal Resistance, Junction–to–Ambient (Note 2), RΘJA
With Tab . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W
Without Tab . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
Operating Junction Temperature range (Note 2), TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature range (Note 2), Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” from case, 10sec Max, Note 2), TL . . . . . . . . . . +260°C
Note 1. Pulse Test: Pulse Width = 25ms, Duty Cycle = 50%
Note 2. Tab temperature is measured on center of tab, 1/16” from plastic body.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Forward Current Transfer Ratio
Collector–to–Emitter Voltage
Test Conditions
Min
Typ
Max
10k
–
60k
Unit
hFE
IC = 200mA, VCE = 5V
hfe
IC = 20mA, VCE = 5V, f = 1kHz
–
10k
–
IC = 10mA
50
–
–
V
VCEO
Collector Saturation Voltage
VCE(sat) IC = 500mA, IB = 0.5mA, Note 3
–
–
1.5
V
Base Saturation Voltage
VBE(sat) IC = 500mA, IB = 0.5mA, Note 3
–
–
2.0
V
Collector Cutoff Current
Emitter Cutoff Current
Input Impedance
ICES
VCE = 50V, TJ = +25°C
–
–
0.5
µA
ICBO
VCE = 50V, TJ = +150°C
–
–
20
µA
IEBO
VEB = 13V
–
–
0.1
µA
IC = 20mA, VCE = 5V, f = 1kHz
50
500
–
Ω
Ccbo
VCB = 10V, f = 1MHz
–
5
10
pF
fT
VCE = 5V, IC = 20mA
–
75
–
MHz
IC = 1A, IB1 = 1mA
–
100
–
ns
hie
Collector Capacitance
Gain Bandwidth Product
Delay Time and Rise Time
td + tr
Storage Time
ts
IC = 1A, IB1 = IB2 = 1mA
–
350
–
ns
Fall Time
tf
IC = 1A, IB1 = IB2 = 1mA
–
800
–
ns
Note 3. Pulsed measurement: Pulse Width = 300µs, Duty Cycle ≤ 2%.
.380 (9.56)
.180 (4.57)
.132 (3.35) Dia
C
C
B
E
.500
(12.7)
.325
(9.52)
1.200
(30.48)
Ref
.070 (1.78) x 45°
Chamf
.300
(7.62)
.050 (1.27)
.400
(10.16)
Min
E
.100 (2.54)
B
C
.100 (2.54)