NTE266 Silicon NPN Transistor Darlington Power Amplifier Features: D Forward Current Transfer Ratio: hFE = 40,000 Min D Power Dissipation: 1.33W Free–Air @ TA = +50°C D Hard Solder Mountdown Applications: D Driver, IC Driver D Regulator D Touch Switch D Audio Output D Relay Substitute D Oscillator D Servo–Amplifier D Capacitor Multiplier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–to–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–to–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter–to–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25W TA = +50°C With Tab . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W Thermal Resistance, Junction–to–Case (Note 1), RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20°C/W Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W Operating Junction Temperature Range (Note 1), TJ . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature range (Note 1), Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Lead Temperature (During Soldering, 1/16” from case, 10sec Max), TL . . . . . . . . . . . . . . . . . +260°C Note 1. Tab temperature is measured on center of tab, 1/16” from plastic body. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Forward Current Transfer Ratio Test Conditions hFE IC = 200mA, VCE = 5V hfe IC = 20mA, VCE = 5V, f = 1kHz Min Typ Max 40k – – – 20k – Unit Collector Saturation Voltage VCE(sat) IC = 500mA, IB = 0.5mA, Note 2 – – 1.5 V Base Saturation Voltage VBE(sat) IC = 500mA, IB = 0.5mA, Note 2 – – 2.0 V Collector Cutoff Current Emitter Cutoff Current Input Impedance ICES VCE = 50V, TJ = +25°C – – 0.5 µA ICBO VCE = 50V, TJ = +150°C – – 20 µA IEBO VEB = 13V – – 0.1 µA IC = 20mA, VCE = 5V, f = 1kHz 50 500 – Ω Ccbo VCB = 10V, f = 1MHz – 5 10 pF fT VCE = 5V, IC = 20mA – 75 – MHz IC = 1A, IB1 = 1mA – 100 – ns hie Collector Capacitance Gain Bandwidth Product Delay Time and Rise Time td + tr Storage Time ts IC = 1A, IB1 = IB2 = 1mA – 350 – ns Fall Time tf IC = 1A, IB1 = IB2 = 1mA – 800 – ns Note 2. Pulsed measurement: Pulse Width = 300µs, Duty Cycle ≤ 2%. .380 (9.56) .180 (4.57) .132 (3.35) Dia C C B E .500 (12.7) .325 (9.52) 1.200 (30.48) Ref .070 (1.78) x 45° Chamf .300 (7.62) .050 (1.27) .400 (10.16) Min E .100 (2.54) B C .100 (2.54)