NTE267 Silicon NPN Transistor High Gain Darlington Power Amp, Switch Features: D Forward Current Transfer Ratio: hFE = 90,000 min. D Free−Air Power Dissipation: 1.33W @ TA = +50°C D Hard Solder Mountdown Applications: D Driver D Regulator D Audio Output D Relay Substitute D Touch Switch D D D D Oscillator IC Driver Servo Amplifier Capacitor Multiplier Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified) Collector to Emitter, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter to Base, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13V Collector to Emitter, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Power Dissipation, PT Tab at +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25W Free Air at +50°C w/Tab . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W Thermal Resistance, Junction to Case (Note 1), RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20°C/W Thermal Resistance, Junction to Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec max), TL . . . . . . . . . . +260°C Note 1. Tab temperature is measured on center of tab, 1/16” from plastic body. Electrical Characteristics: (TA = +25°C, unless otherwise specified) Parameter Forward Current Transfer Ratio Symbol Test Conditions Min Typ Max hFE VCE = 5V, f = 1kHz IC = 200mA 90k − − 90k − − IC = 20mA Unit Collector Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 0.5mA, Note 2 − − 1.5 V Base Emitter Saturation Voltage VBE(sat) IC = 500mA, IB = 0.5mA − − 2.0 V ICES VCE = Rated VCES, TJ = +25°C − − 0.5 μA ICBO VCE = Rated VCES, TJ = +150°C − − 20 μA Emitter Cutoff Current IEBO VEB = 13V − − 0.1 μA Collector Capacitance Ccbo VCB = 10V, f = 1MHz − 5 10 pF fT VCE = 5V, IC = 20mA − 75 − MHz IC = 1A, IB1 = 1mA − 100 − ns Collector Cutoff Current Gain Bandwidth Product Switching Times Delay Time and Rise Time td & tr Storage Time ts IC = 1A, IB1 = IB2 = 1mA − 350 − ns Fall Time tf IC = 1A, IB1 = IB2 = 1mA − 800 − ns Note 2. Pulsed measurement, 300μsec pulse width, duty cycle ≤ 2%. .380 (9.56) .180 (4.57) .132 (3.35) Dia C .500 (12.7) C .325 (9.52) 1.200 (30.48) Ref B .070 (1.78) x 45° Chamf .300 (7.62) .050 (1.27) E .400 (10.16) Min .100 (2.54) E B C .100 (2.54)