NTE2988 MOSFET N–Channel, Enhancement Mode High Speed Switch Description: The NTE2988 is an N–Channel, enhancement mode, power field effect transistor in a TO52 type package designed especially for low power inverters, interface to CMOS and TTL logic, and line drivers. Features: D High Input Impedance D Extremely Fast Switching D Rugged–Dissipation Limited SOA D Internal Drain–Source Diode Benefits: D Reduced Component Count D Simpler Designs – Directly Interfaces CMOS & TTL D Improved Circuit Performance D Increased Reliability Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain–Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain–Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Peak Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Gate–Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V, –0.3V Drain Current Continuous (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.2A Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.0A Maximum Dissipation (TC = +25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 315mW Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5mW/°C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +300°C Note 1. Limited by package dissipation. Note 2. Pulse test – 80µs to 300µs, 1% duty cycle. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Drain–Source Breakdown Voltage BVDSS ID = 1000µA, VGS = 0 60 – – V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1mA 0.8 – 2.5 V Gate–Body Leakage IGSS VGS = 15V, VDS = 0 – – 100 nA Zero Gate Voltage Drain Current IDSS VDS = 50V, VGS = 0 – – 10 µA On–State Drain Current ID(on) VGS = 5V, ID = 0.2A, Note 2 – – 1.5 V VGS = 10V, ID = 0.5A, Note 2 – – 2.5 V VGS = 5V, ID = 0.2A, Note 2 – – 7.5 Ω VGS = 10V, ID = 0.5A, Note 2 – – 5.0 Ω 200 – – mS – – 60 pF Static–Drain–Source On–State Resistance rDS(on) Dynamic Characteristics Forward Transconductance gfs VDS = 15V, ID = 0.5A, Note 2 Input Capacitance Ciss VDS = 25V, f = 1MHz Reverse Transfer Capacitance Crss – – 5 pF Common Source Output Capacitance Coss – – 25 pF Turn–On Time tON – – 10 ns Turn–Off Time tOFF VDD = 15V, RL = 23Ω, Rg = 25Ω, ID = 0.6A – – 10 ns IS = –0.5A, VGS = 0, Note 2 – –0.85 – V VGS = 0, IF = IR = 0.5A – 160 – ns Drain–Source Diode Characteristics Forward ON Voltage Reverse Recovery Time VSD trr Note 2. Pulse test – 80µs to 300µs, 1% duty cycle. .230 (5.84) Dia Max 195 (4.95) Dia Max .150 (3.81) Max .500 (12.7) Min .019 (0.5) Dia Gate Source Drain/Case 45° .040 (1.01)