2393

NTE2393
MOSFET
N−Channel Enhancement Mode,
High Speed Switch
TO3P Type Package
Description:
The NTE2393 is an N−Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
D High Voltage: 500V for Off−Line SMPS
D High Current: 9A for up to 350W SMPS
D Ultra Fast Switching for Operation at less than 100kHz
Industrial Applications:
D Switching Mode Power Supplies
D Motor Controls
D
G
S
Absolute Maximum Ratings:
Drain−Source Voltage (VGS = 0), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Drain−Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Continuous Drain Current, ID
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.6A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A
Clamped Drain Inductive Current (Note 1), IDLM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A
Total Dissipation (TC = +25 C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W/ C
Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150 C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150 C
Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 C/W
Maximum Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +275 C
Note 1. Pulse width limited by safe operating area.
Rev. 10−13
Electrical Characteristics: (TC = +25 C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
500
−
−
V
VGS = 0, VDS = Max Rating
−
−
250
A
VGS = 0, VDS = 400V,
TC = +125 C
−
−
1000
A
VDS = 0, VGS = 20V
−
−
100
nA
OFF Characteristics
Drain−Source Breakdown Voltage
V(BR)DSS ID = 250A, VGS = 0
Zero−Gate Voltage Drain Current
Gate−Body Leakage Current
IDSS
IGSS
ON Characteristics (Note 2)
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250A
2
−
4
V
Static Drain−Source On Resistance
RDS(on)
VGS = 10V, ID = 4.5A
−
−
0.7
VGS = 10V, ID = 4.5A,
TC = 100 C
−
−
1.4
−
−
mho
Dynamic Characteristics
Forward Transconductance
gfs
VDS = 25V, ID = 4.5A
5
Input Capacitance
Ciss
−
Output Capacitance
Coss
VDS = 25V, VGS = 0,
f = 1MHz
Reverse Transfer Capacitance
Crss
1600 1900
pf
−
−
280
pf
−
−
170
pf
−
30
40
ns
−
40
60
ns
td(off)
−
130
170
ns
tf
−
30
40
ns
ISD
−
−
9
A
Switching Characteristics
Turn−On Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
VDD = 250V, ID = 4.5A,
RI = 4.7 VI = 10V
Source Drain Diode Characteristics
Source−Drain Current
Source−Drain Current (Pulsed)
ISDM
Note 2
−
−
36
A
Forward ON Voltage
VSD
ISD = 9A, VGS = 0
−
−
1.15
V
trr
IDS = 9A, VGS = 0,
di/dt = 100A/s
−
420
−
ns
Reverse Recovery Time
Note 2. Pulse width limited by safe operating area.
Note 3. Pulsed: Pulse Duration = 300s, Duty Cycle 1.5%
.190 (4.82)
.615 (15.62)
D
.787
(20.0)
.591
(15.02)
.787
(20.0)
.126
(3.22)
Dia
G
D
S
.215 (5.47)