NTE NTE308

NTE308
Integrated Thyristor/Rectifier (ITR)
TV Horizontal Deflection & Commutating Switch
Absolute Maximum Ratings:
Repetitive Peak Forward Off–State and Reverse Voltage, VDRM, VRRM . . . . . . . . . . . . . . . . . . . 800V
RMS On–State Current, ITRMSM, IFRMSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Mean On–State Current (TC = +80°C), ITAVM, IFAVM
Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.4A
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.45A
Repetitive Peak On–State Current, ITRM, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Surge Current (t = 10ms, tvi = +100°C), ITSM, IFSM
Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Non–Repetitive Rate of Rise of On–State Current, di/dtcrit . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A/µs
Repetitive Rate of Rise of On–State Current (ITM = 20A, tvi = +100°C, VDM = 640V), di/dtcrit
(Pulse Generator Data: vL = 8V, iK = 0.25A, diG/dt ≥ 0.25A/µs)
fo = 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A/µs
fo = 16kHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/µs
Rate of Rise of Off–State Voltage (tvi = +100°C, VD = 536V), dv/dtcrit . . . . . . . . . . . . . . . . . . 400V/µs
Rate of Rise of Voltage Subsequent to Prior On–State Current, dv/dtcrit
tvi = +100°C, VD = 536V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/µs
Peak Gate Power Losses (tg ≤ 10µs), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Total Mean Gate Power Loss for One Cycle, PG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +130°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3°C/W
Thermal Resistance, Junction–to–Ambient, RthJA
Without Heatsink . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35°C/W
On Vertical Cooling Fin 60mm x 60mm x 1.5mm, Al or Cu, Roughened Surface . . 10°C/W
Electrical Characteristics:
Maximum On–State Voltage (tvi = +25°C, iT = iF = 10A), VT, VF
Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.16V
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2V
Threshold Voltage, V(TO)
Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6V
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4V
Forward Slope Resistance, rT, rF
Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53Ω
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70Ω
Electrical Characteristics (Cont’d):
Maximum Gate Trigger Voltage (tvi = +25°C, VD = 6V, RA = 20Ω), VGT . . . . . . . . . . . . . . . . . . . 2.0V
Minimum Gate Trigger Voltage (tvi = +100°C, VD = 6V, RA = 20Ω), VGT . . . . . . . . . . . . . . . . . . . 0.1V
Maximum Gate Trigger Current (tvi = +25°C, VD = 6V, RA = 20Ω), IGT . . . . . . . . . . . . . . . . . . . 50mA
Maximum Holding Current (tvi = +25°C, VD = 6V, RA = 20Ω), IH . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Maximum Latching Current (tvi = +25°C, VD = 6V, RGK ≥ 20Ω), IL . . . . . . . . . . . . . . . . . . . . . . 210mA
(Pulse Generator Data: iG = 0.25A, diG/dt = 0.25A/µs, tg = 4µs)
Typical Capacitance, Anode–Cathode at Zero Voltage (tvi = +25°C, fo = 16kHz), Czero . . . . . 250pF
Maximum Lag Charge (tvi = +100°C, iFM = 10A, –diF/dt = 10A/µs), QS . . . . . . . . . . . . . . . . . 0.96µAs
Maximum Forward Off–State and Reverse Current (tvi = +100°C, vD = 800V), iD, iR . . . . . . . 1.5mA
Maximum Gate Controlled Delay Time (tvi = +25°C, VD = 536V, iTM = 5A), tgd . . . . . . . . . . . . 0.8µs
(Pulse Generator Data: iG = 0.25A, diG/dt = 0.5A/µs)
Maximum Pulse Turn–Off Time (tvi = +100°C), tqp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1µs
Typical Pulse Turn–Off Time (tvi = +80°C, fo = 16kHz), tqp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8µs
Maximum Reverse Recovery Time (tvi = +25°C, iFM = 10A, –diF/dt = 10A/µs), trr . . . . . . . . . . 0.7µs
.295 (7.5)
.485 (12.3)
Dia
.062 (1.57)
.031 (0.78) Dia
.960 (24.3)
.360
(9.14)
Min
Gate
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.200
(5.08)
.145 (3.7) R Max
Anode/Case
Cathode