NTE397 Silicon PNP Transistor Power Amplifier & High Speed Switch (Compl to NTE396) Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Sustaining Voltage VCEO(sus) IC = 50mA, IB = 0, Note 1 300 – – V Collector Cutoff Current ICBO VCB = 280V, IE = 0 – – 50 µA Emitter Cutoff Current IEBO VEB = 6V, IC = 0 – – 20 µA hFE IC = 50mA, VCE = 10V 30 – 120 Output Capacitance Cobo VCB = 10V, IE = 0, f = 1MHz – – 15 pF Input Capacitance Cibo VCB = 5V, IC = 0, f = 1MHz – – 75 pF Small–Signal Current Gain hfe IC = 10mA, VCE = 10V, f = 1MHz 25 – – Re(hie) VCE = 10V, IC = 5mA, f = 1MHz – – 300 ON Characteristics DC Current Gain Small–Signal Characteristics Real Part of Input Impedance Note 1. Pulse Test; Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. CAUTION: The sustaining voltage must not be measured on a curve tracer. Ω .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45° .031 (.793)