NTE NTE469

NTE469
Silicon N–Channel JFET Transistor
Chopper, High Speed Switch
Applications:
D Analog Switches
D Choppers
D Commutators
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.68mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
IG = 1µA, VDS = 0
35
–
–
V
VGS = –15V, VDS = 0
–
–
–1.0
nA
–0.5
–
–3.0
V
–
–
1.0
nA
2.0
–
–
mA
OFF Characteristics
Gate–Source Breakdown Voltage
V(BR)GS
S
Gate Reverse Current
Gate–Source Cutoff Voltage
Drain Cutoff Current
IGSS
VGS(off)
VDS = 5V, ID = 1µA
ID(off)
VDS = 5V, VGS = –10V
IDSS
VDS = 15V, VGS = 0, Note 1
ON Characteristics
Zero–Gate Voltage Drain Current
Static Drain–Source ON Resistance
rDS(on)
VDS = 0.1V
–
–
100
Ω
Drain–Gate ON Capacitance
Cdg(on)
VDS = VGS = 0, f = 1MHz
–
–
28
pF
Source–Gate ON Capacitance
Csg(on)
VDS = VGS = 0, f = 1MHz
–
–
28
pF
Drain–Gate OFF Capacitance
Cdg(off)
VGS = –10V, f = 1MHz
–
–
5
pF
Source–Gate OFF Capacitance
Csg(off)
VGS = –10V, f = 1MHz
–
–
5
pF
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 3%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
D S G
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max