NTE NTE490

NTE490
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current (Note 1), ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. The Power Dissipation of the package may result in a lower continuous drain current.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
60
90
–
V
–
0.01
10
nA
0.8
2.0
3.0
V
OFF Characteristics
Drain–Source Breakdown Voltage
Gate Reverse Current
V(BR)DSS VGS = 0, ID = 100µA
IGSS
VGS = 15V, VDS = 0
ON Characteristics (Note 2)
Gate Threshold Voltage
VGS(Th)
VDS = VGS, ID = 1mA
Static Drain–Source ON Resistance
rDS(on)
VGS = 10V, ID = 200mA
–
1.8
5.0
Ω
VDS = 25V, VGS = 0
–
–
0.5
µA
gfs
VDS = 10V, ID = 250mA
–
200
–
mmhos
Ciss
VDS = 10V, VGS = 0, f = 1MHz
–
–
60
pF
Turn–On Time
ton
ID = 200mA
–
4
10
ns
Turn–Off Time
toff
ID = 200mA
–
4
10
ns
Drain Cutoff Current
Forward Transconductance
ID(off)
Small–Signal Characteristics
Input Capacitance
Switching Characteristics
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
D G S
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max